77 results about "Bi element" patented technology

The invention provides an A-B site simultaneously substituting microwave dielectric ceramic material and a preparation method thereof. The general chemical formula of the material is (Ba1-aAa)6-3x(Nd1-bBb)8+2x(Ti1-cCc)18O54, C=MN, wherein x=3 / 4, a is greater than or equal to 0.05 and smaller than or equal to 0.2, b is greater than or equal to 0.05 and smaller than or equal to 0.15, c is greater than or equal to 0.02 and smaller than or equal to 0.08, A represents divalent Ca and Sr elements substituting A1 sites, B represents trivalent Sm and Bi elements substituting A2 sites, M represents Nb with the valence state higher than tetravalency, N represents other one or more elements with a valence state lower than tetravalency and an ionic radius similar to Ti, and M and N substitute simultaneously or individually. The preparation method includes: determining the respective mass percentage content according to the general chemical formula, conducting ball mill mixing, performing presintering under 1000-1150DEG C, and then conducting sintering at 1250-1450DEG C. The prepared material has adjustable dielectric constant and frequency-temperature coefficient and at the same time maintains a high Q*f value. The formula does not contain Pb, Cd and other volatile or heavy metals, the performance is greatly enhanced, the raw materials are in abundant supply, and the price is low, so that low cost of high performance microwave ceramics becomes possible.

The invention discloses a multilayer fluxless material with stepped silicon content and a preparation method and an application thereof. The multilayer fluxless material comprises a core layer, a soldering layer and a cover layer which are composited in order, and the silicon mass content of the soldering layer and cover layer are different. The cover layer and the soldering layer contains a silicon material, by using the different differential concentrations of the silicon content of the soldering layer and the cover layer, the soldering liquid flows from high density to low concentration direction, and an oxide-film is effectively broken through. at the same time, Mg with high concentration flows with the silicon material, then is diffused next to the oxide-film, under condition that oxygen content is low, the diffused magnesium and the aluminium alloy oxide-film are subjected to spinel, the generated spinel is easily coiled into the liquid by the soldering liquid (the silicon material), the soldering liquid is fully contacted, capillary and infiltration effects are employed, so that the welding quality of a soldered joint is saturated. a Bi element is added in the cover layer or the soldering layer, and the oxide-film can be firstly broken through.

Provided is a piezoelectric material excellent in piezoelectricity. The piezoelectric material includes a perovskite-type complex oxide represented by the following General Formula (1).A(ZnxTi(1-x))yM(1-y)O3  (1)wherein A represents at least one kind of element containing at least a Bi element and selected from a trivalent metal element; M represents at least one kind of element of Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value satisfying 0.4≦x≦0.6; and y represents a numerical value satisfying 0.1≦y≦0.9.

The invention discloses a SnBiAgSbIn low-temperature lead-free solder alloy, belonging to the technical field of low-temperature solder alloys. Low-temperature lead-free solder is prepared from the following ingredients in percentage by weight: 30-60% of Bi, 0-3.5% of Ag, 0.1-3% of Sb, 0-3.0% of In, 0-0.11% of Ge, 0-0.11% of P, more than two kinds of rare earth elements, the balance of Sn and unavoidable impurities. The alloy can be used for inhibiting the segregation of a Bi element, improving the mechanical property of welding spots, and solving the problems that in the process of using binary SnBi solder at present, the welding spots can generate cavities easily, the mechanical performance is poor, and the welding spots are easy to peel off and the like.

Provided is a piezoelectric material including a lead-free perovskite-type composite oxide which is excellent in piezoelectric characteristics and temperature characteristics and is represented by the general formula (1):xABO3-yA′BO3-zA″B′O3 in which A is a Bi element; A′ is a rare earth element including La; B is at least one element selected from Ti, Zn, Sn and Zr; A″ is at least one element selected from Ba, Sr and Ca; B′ is at least one element selected from divalent, trivalent, pentavalent, tetravalent, and hexavalent elements; and x is a value of 0.10 or more and 0.95 or less, y is a value of 0 or more and 0.5 or less, and z is a value of 0 or more and 0.7 or less, provided that x+y+z=1.

The invention provides a bismuth-doped solid oxide battery fuel electrode material and a preparation method and application thereof. According to the bismuth-doped solid oxide battery fuel electrode material, the chemical formula is La1-x-zM1xBizCr1-yM2yO3-delta, wherein M1 is alkaline earth metal, M2 is transition metal, 0 < x < 1.0, 0 < y < 1.0, z is the doping amount of Bi. The catalytic activity of the Bi-doped LSCrF perovskite type fuel electrode material is obviously enhanced; and the Bi-doped perovskite oxide fuel electrode material keeps better chemical and structural stability under oxidation atmosphere, reduction atmosphere and high temperature conditions and has better chemical compatibility and thermal compatibility with typical electrolyte materials. In addition, the Bi element is cheaper and easier to obtain, the preparation method of Bi doping is also simpler and easier to operate and the application in the solid oxide battery can be facilitated.

The invention discloses a bismuth ferrate-barium titanate-bismuth zinc titanate-bismuth aluminate high-temperature lead-free piezoelectric ceramic and a preparation method thereof. The composition general formula of the piezoelectric ceramic is: xBiFeO3-yBaTiO3-zBi(Ti0.5Zn0.5)O3+tBiAlO3+mP+nMnCO3+2.5%Bi2O3, wherein x, y, z, t, m and n represent mole fractions, 0.6<=x<=0.8, 0.15<=y<=0.3, 0.05<=z<=0.15, 0<t<=0.10, 0<m<=0.1, 0<n<=0.1, and 2.5% mol of Bi2O3 is used to make up the volatilization of the Bi element in the sintering process, and is used as a sintering aid; and P is one or a combination of several sintering aids of Ba(W0.5Cu0.5)O3, CuO and Li2CO3. The preparation method comprises the working procedures of batching according to the composition general formula, ball milling, molding,glue discharge, sintering and the like. The high-temperature lead-free piezoelectric ceramic is prepared, the Curie temperature T<c> is up to 596 DEG C, the depolarization temperature T<d> is up to 580 DEG C, and the highest piezoelectric constant is up to 137 pC / N. The system ceramics are expected to be applied in high temperature fields such as aerospace, nuclear power, petroleum exploration and the like.

Provided is a piezoelectric material having a high Curie temperature and satisfactory piezoelectric characteristics, the piezoelectric material being represented by the following general formula (1):A(ZnxTi(1-x))yM(1-y)O3  (1)where A represents a Bi element, M represents at least one element selected from Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value of 0.4≦x≦0.6; and y represents a numerical value of 0.17≦y≦0.60.

The invention discloses a method for preparing a BiFeO3 based multiferroic composite material. Positions of a Bi element and a Fe element are simultaneously doped with dysprosium and titanium in different ratios, and a ferrimagnetic garnet minor phase is generated in the finally obtained sample through autonomous induction so as to form the multiferroic composite material. The method for preparing the material comprises the following steps: weighing bismuth oxide, ferric oxide, dysprosia and titanium dioxide powder in a certain ratio, fully mixing and grinding uniformly, tabletting, roasting in a tube furnace or chamber furnace at 650 DEG C for one hour, and cooling along with the furnace to room temperature; and secondarily grinding and tabletting the obtained product, sintering in the tube furnace again at different temperatures from 820 to 970 DEG C according to different component ratios for about 20 minutes by a method similar to rapid sintering, and preparing the compact block multiferroic composite material. Simultaneously, the dysprosium element is replaced by a gadolinium element, and the BiFeO3 based multiferroic composite material with improved ferroelectricity and magnetism can also be obtained.

Provided is a Bi-based piezoelectric material having good piezoelectric properties. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1):Ax(ZnjTi(1-j))l(MgkTi(1-k))mMnO3  General formula (1)where: A represents a Bi element, or one or more kinds of elements selected from the group consisting of trivalent metal elements and containing at least a Bi element; M represents at least one kind of an element selected from the group consisting of Fe, Al, Sc, Mn, Y, Ga, and Yb; and 0.9≦x≦1.25, 0.4≦j≦0.6, 0.4≦k≦0.6, 0.09≦l≦0.49, 0.19≦m≦0.64, 0.13≦n≦0.48, and l+m+n=1 are satisfied.

The invention provides an aluminum brazing sheet for fluxless brazing, which is used for brazing in a non-oxidizing atmosphere without using a flux and without a reduced pressure. Al-Si-Mg-Bi series solder coatings containing 0.01 to 2.0% of Mg, 1.5 to 14.0% of Si, and 0.05 to 1.5% of Bi by mass% is located on the outermost surface by covering one or both sides of the core material. The Mg-Bi-based compound contained in the Al-Si-Mg-Bi-based solder has an equivalent circle diameter of 0.01 [mu] m or more and less than 5. There are more than 10 Mg-Bi compounds with a diameter of 0 [mu] m in thefield of view per 10,000 [mu] m2; The field of view of 10,000 m2 is less than two. When the particles of Bi element contained in the brazing material are viewed from the surface layer surface beforebrazing, the particles of Bi element having a diameter of 5.0 [mu] m or more in terms of equivalent circle diameter per 10,000 [mu] m2 Field of view is less than 5.