13 results about "Bi element" patented technology

The invention discloses a rare bismuth II type superlattice material and a preparation method thereof. The superlattice material has an InAs (Bi) / GaSb or InAs (Bi) / InAsSb superlattice structure formed by alternately laminating InAs (Bi) layers and GaSb layers or InAsSb layers, and the InAs (Bi) layers are formed by introducing Bi elements into the InAs layers. The preparation method of the superlattice material comprises the following steps: (1) selecting an InSb, InAs or GaSb substrate, performing thermal cleaning on the substrate at 500 DEG C, and cleaning the substrate by using atomic hydrogen in an ultrahigh vacuum environment; (2) alternately laminating InAs (Bi) layers and GaSb layers or InAsSb layers by utilizing a molecular beam epitaxial growth technology, and finally growing a GaSb layer or InAsSb layer as a stop layer, (3) carrying out rapid thermal annealing treatment at the temperature of 380-420 DEG C; the time is 0.5 to 1 min; and (4) characterizing the photoluminescence property of the superlattice. According to the invention, the strain distribution and the energy band structure of the material are obviously improved, the more flexible wavelength regulation and control capability is realized, the hole effective quality is reduced, and the carrier mobility and the quantum efficiency are improved.

The application discloses a kind of Bi / OVs-Bi2WO6-Cl catalysts with multiple active sites synergy and a preparation method and application thereof, and belongs to the field of photocatalysis technology, the application uses hydrothermal method to dope Cl into Bi2WO6, then in-situ reduction is generated by using chemical reduction method Bi element and oxygen vacancy, the introduction of multiple active sites, on the one hand, promote the effective separation of photoinduced electron-hole pairs, fully play the catalytic performance of semiconductor, on the other hand, can provide more CO2 activation site, finally make Bi / OVs-Bi2WO6-Cl photocatalyst have better CO2 reduction performance;The material has high photocatalytic selectivity, and the production cost is low, and the production process is simple.

The invention discloses a novel thermoelectric material based on N-type BiSbSe3 polycrystal and a preparation method thereof, and belongs to the technical field of thermoelectric material preparation, the thermoelectric material is S solid solution and halogen doped N-type BiSbSe3 polycrystal, the chemical general formula of the thermoelectric material is BiSbSe3-x-y SxMy, M is one of Br, Cl and I, the molar ratio of Bi to Sb to Se to S to M is 1: 1: 3-x-y: x: y, x is greater than or equal to 0.12 and less than or equal to 0.48, and y is greater than or equal to 0 and less than or equal to 0.06. The preparation method comprises the following steps: (1) weighing required raw materials including a Bi elementary substance, a Sb elementary substance, a Se elementary substance, Bi2S3 and a halogen introducing substance, ensuring that the molar ratio of Bi to Sb to Se to S to M is 1: 1: (3-x-y): x: y, M is Br or Cl or I, x is more than or equal to 0.12 and less than or equal to 0.48, y is more than or equal to 0 and less than or equal to 0.06, and mixing the raw materials after weighing; and (2) carrying out high-temperature melting synthesis reaction on the mixed raw materials, and cooling along with a furnace after the reaction is finished, so as to finally obtain the N-type BiSbSe3 polycrystal. The problems that in the prior art, when BiSbSe3 is prepared, a quenching technology is needed for assistance, energy consumption is large, time is long, and part of media are low in safety and not environmentally friendly are solved.

The invention discloses a preparation method for obtaining an oxygen vacancy-rich Bi2WO6 material through alkali treatment and application of the oxygen vacancy-rich Bi2WO6 material in electro-catalytic nitrogen reduction. According to the invention, Bi2WO6 is prepared by adopting a hydrothermal method, and then a low-concentration NaOH solution is used for etching to obtain the Bi2WO6 material with rich oxygen vacancies. Rich oxygen vacancies are introduced into Bi2WO6, and the oxygen vacancies can be used as excellent charge carriers and reaction active sites, so that the charge transfer rate between a catalyst and N2 is promoted, and the adsorption and activation capability on N2 is improved, thereby improving the activity of catalyzing NRR. The alkali etching treatment improves the Bi element content in Bi2WO6 at the same time, and is beneficial to inhibition of hydrogen evolution side reaction, thereby improving the selectivity of the catalyst to NRR. The prepared Bi2WO6 material with rich oxygen vacancies has relatively high ammonia yield and Faraday efficiency when being applied to an electro-catalytic nitrogen reduction process, and shows good stability.

The invention provides an MAX phase material, a wear-resistant coating based on the MAX phase material and a preparation method, and relates to the technical field of coatings. The MAX phase material is a Bi-doped Ti4AlN3MAX phase material, and the content of Bi is 0.1 at.%-2 at.% when the sum of the four elements Bi, Ti, Al and N is 100%. The comprehensive performance of the Ti4AlN3MAX phase material is remarkably improved through precise doping of the Bi element, after Bi atoms enter MAX phase crystal lattices, the interlayer chemical bonding strength is enhanced through electron cloud redistribution, a more compact microstructure is formed, the coating is more resistant to interlayer stripping under friction loads, and therefore the abrasion resistance and durability of the coating are improved; meanwhile, transition layers with chemical activity can be formed on the surfaces of MAX phase particles through the surface enrichment effect of the Bi element, stable chemical bonds can be formed with polar groups in a resin matrix, and the filler-matrix interface bonding strength is greatly improved.

The invention provides a Bi-based material for X-ray detection and protection and a preparation method and application thereof, and belongs to the technical field of X-ray detection and protection. According to the invention, the Bi-based material is BiO (IO3), BiVO4 or Bi2WO6; the preparation method comprises the following steps: mixing an I2O5 solution and a BiH10N3O14 suspension, and reacting to obtain BiO (IO3); the preparation method comprises the following steps: mixing Bi (NO3) 3.5 H2O, NH4VO3 and a nitric acid solution, and dropwise adding ammonia water into the mixed solution until yellow precipitate appears, so as to obtain BiVO4; the preparation method comprises the following steps: mixing a Na2WO4. 2H2O solution and a Bi (NO3). 5H2O suspension, and reacting to obtain Bi2WO6. The Bi-based material disclosed by the invention has excellent X-ray detection performance and protection effect, and due to the extremely high atomic number of the Bi element, the high equivalent atomic number and density of the material are finally formed, so that full absorption of X-rays is realized.

The application belongs to the field of laser selective melting (SLM) rapid forming, discloses a Bi element containing magnesium alloy powder for laser selective melting and application thereof, and the magnesium alloy powder is composed of the following components in percentage by mass: Al element: 8.5-9.0%, Zn element: 0.5-1%, Bi element: 1-2%, Mn element: 0.2-0.4%, impurities: ≤0.05%, and the rest is Mg element. Through improvement on the specific composition of the magnesium alloy powder for laser selective melting, the application introduces appropriate Bi element into the magnesium alloy, promotes alloying in cooperation with the SLM process, and the corresponding SLM magnesium alloy forming piece has better tensile strength and yield strength, and the thermal stability of the performance of the forming piece is better.

The invention discloses a preparation method of a bismuth-doped modified silver tin oxide electric contact material, and relates to a preparation method of a modified silver tin oxide electric contact material. The invention aims to solve the problems that the contact resistance of an Ag / SnO2 series electric contact material is increased and the dispersibility of SnO2 in an Ag matrix is poorer due to poor wettability of an existing Ag / SnO2 phase interface. The Bi element doped SnO2 transparent conductive oxide is prepared through a coprecipitation method, the Bi element is introduced to improve the wettability of the Ag / SnO2 phase interface while the high thermal stability of SnO2 is reserved, and collaborative optimization of the electrical life and the contact resistance is achieved. The Bi element doped Ag / SnO2 electric contact material provided by the invention can assist in replacing Ag / CdO to be used on a low-voltage electric appliance.

The invention discloses a europium-doped bismuthate radiation-resistant optical glass material and a preparation method thereof, 50 to 56 parts of H3BO3, 0.9 to 1.8 parts of La2O3, 1.1 to 2.8 parts of Na2CO3, 4.8 to 5.5 parts of K2CO3, 30 to 45 parts of Bi2O3, 0.5 to 3.8 parts of Eu2O3 and 1.2 to 4.5 parts of Sb2O3 are mixed and then are subjected to high-temperature melting, and obtained high-temperature glass liquid is subjected to molding and annealing treatment to obtain the europium-doped bismuthate radiation-resistant optical glass material. According to the radiation-resistant glass prepared by the invention, the novel variable valence element Eu is added, so that the formation of a color center in a microstructure after high-dose gamma radiation can be effectively inhibited. Meanwhile, the novel variable valence element Eu can practically solve the problems that the radiation-resistant glass is discolored and the initial transmittance is reduced due to the traditional variable valence element Ce. On the basis of the gamma absorption coefficient of the element, the Bi oxide in the radiation-resistant glass is used as one of network forming bodies, so that the problem of toxicity of the Pb element is avoided while the radiation resistance is ensured. The Sb element oxide is added, so that the problems that the Bi element causes glass discoloration and the initial transmittance of the glass is reduced are effectively solved.

This invention discloses a bismuth tantalum halide oxide synergistically modified with elemental Bi and oxygen vacancies, its preparation method, and its application, belonging to the field of photocatalysis technology. This invention synthesizes a Bi4TaO8Cl photocatalyst synergistically modified with elemental Bi and oxygen vacancies. By utilizing the SPR effect of bismuth metal, the absorption of visible light by Bi4TaO8Cl is enhanced, forming more active free radicals. At the same time, the synergistic modification of the photocatalyst by oxygen vacancies is effectively utilized to improve the carrier separation efficiency, further enhancing the photocatalytic degradation of NO by pure Bi4TaO8Cl.

This invention provides a high-temperature stable pulse energy storage ceramic composition and its preparation method, relating to the field of pulse energy storage ceramic materials technology. The ceramic composition is based on Ba(Zr) x Ti 1‑x The main component is a perovskite compound (Bi2O3). In addition, it contains Bi as a first secondary component (Bi element) in the form of a composite of Bi2O3 and Bi2O3·nTiO2, as well as Ca, Sr, Mg, Mn, and Si elements. Its temperature coefficient of dielectric constant (TCC) meets -750±120ppm / ℃ over a wide temperature range of -55℃ to 125℃. The ceramic composition of this invention possesses high dielectric constant, low dielectric loss, high breakdown field strength, and a fine-grained structure, making it suitable for high-reliability pulse power capacitors.

The application provides a lead-based catalyst regulated by cobalt-bismuth bimetal, a preparation method and application thereof. The catalyst comprises a carrier, and a catalytic material composed of cobalt-doped lead oxide and bismuth oxide is loaded on the surface of the carrier, and the chemical composition of the catalytic material is expressed as Co x Bi y Pb m O n The preparation method of the catalyst comprises the following steps: taking lead salt, cobalt salt and bismuth salt as metal precursors, taking boric acid as a buffer, taking trisodium citrate dihydrate as a complexing agent, and adopting a two-step electrodeposition method to prepare the catalyst. The catalyst can be used for synthesizing sodium borohydride by an electrocatalytic method. In the application, Pb elements are used as main components of electrode materials, a small amount of Co elements and Bi elements are added as additives, and under the joint action of the two additives, the efficiency of the electro-reduction reaction can be effectively improved, and the yield of sodium borohydride is improved.

The application discloses a Bi-guided controllable flower-shaped heterojunction photocatalyst and a preparation method thereof. By using a double bismuth source and a reducing agent, Bi element is introduced to control Bi2O2CO3 powder, and residual -OH on the surface of the Bi2O2CO3 powder is introduced, then a halogenating agent is added to guide the growth and construction of a composite ternary heterojunction structure. The introduction of Bi can maintain the stable flower-shaped structure of the powder, promote the crystal growth of BiOCl, regulate the proportion of each crystal phase in the heterojunction catalyst to obtain a more effective heterojunction structure, and regulate the morphology to expose the gap of the lamella of the composite powder, effectively improve the active sites and defects, and improve the photocatalytic activity. The method is simple in preparation process, the prepared powder is stable in structure, and the photocatalytic activity of the powder is improved by introducing a heterojunction and a metal element.