Lanthanide-doped bismuth titanate film and preparation method thereof

A technology of lanthanide element and bismuth titanate is applied in the field of bismuth titanate thin film and its preparation, which can solve the problems of low orientation selectivity and unreachable, and achieve the effects of simple operation, low cost and good performance.

Inactive Publication Date: 2010-08-25
UNIV OF JINAN
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

But the Bi they prepared 3.15 Nd 0.85 Ti 3 o 12 The (100) orientation preference of the film is low [the value of (200): (117) is about 3], and the remnant polarization of the film is about 20 microlibrary/cm 2 , the squareness of the hysteresis loop is 70%
In 2006, the inventor's research group used metal

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  • Lanthanide-doped bismuth titanate film and preparation method thereof
  • Lanthanide-doped bismuth titanate film and preparation method thereof
  • Lanthanide-doped bismuth titanate film and preparation method thereof

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Embodiment 1

[0023] Neodymium-doped bismuth titanate Bi (4-x)(1+y) Nd x Ti 3 o 12 The composition of each layer of the film is Bi 3.15(1+y) Nd 0.85 Ti 3 o 12, that is, the doping molar amount of Nd is 0.85, the Bi in Nd-doped bismuth titanate is excessive, and y is the excess percentage of Bi by weight; y is 15% in the first layer of materials, and y in the second to fourth layers of materials y is 20%, and y is 25% in the fifth and above layers of materials, and the thickness of each layer of material is 50nm until the thickness of the film meets the requirements required for practical applications.

[0024] The preparation method of this thin film comprises the following steps:

[0025] (1) Weigh bismuth nitrate, neodymium nitrate and tetrabutyl titanate with a molar ratio of 3.62:0.85:3 respectively, and dissolve bismuth nitrate and neodymium nitrate in a mixed solution of 20ml ethylene glycol and glacial acetic acid. Add tetrabutyl titanate, stir evenly, and then add acetylacet...

Embodiment 2

[0030] Neodymium-doped bismuth titanate Bi (4-x)(1+y) Nd x Ti 3 o 12 The composition of each layer of the film is Bi 3.5(1+y) Nd 0.05 Ti 3 o 12 , that is, the doping molar amount of Nd is 0.5, the Bi in Nd-doped bismuth titanate is excessive, and y is the excess percentage of Bi by weight; y is 10% in the first layer of materials, and y in the second to fourth layers of materials y is 15%, and y is 20% in the fifth layer and above, and the thickness of each layer of material is 40nm until the film thickness reaches the requirement.

[0031] The preparation method of this thin film comprises the following steps:

[0032] (1) Prepare Bi respectively according to the local method described in embodiment 1 3.85 Nd 0.5 Ti 3 o 12 、 Bi 4.03 Nd 0.5 Ti 3 o 12 and Bi 4.20 Nd 0.5 Ti 3 o 12 The concentrations of the three precursor solutions are all 0.2mol / L.

[0033] (2) adopt the same method as example 1 to deposit the precursor solution on the substrate material LaN...

Embodiment 3

[0037] Lanthanum-doped bismuth titanate Bi (4-x)(1+y) La x Ti 3 o 12 In the film, the composition of each layer of material is Bi 3.25(1+y) La 0.75 Ti 3 o 12 , that is, the doping molar amount of La is 0.75, the Bi in the lanthanum-doped bismuth titanate must be excessive, and y is the excess percentage of Bi by weight; y is 12% in the first layer of materials, and y in the second to fourth layers of materials y is 17%, and y is 22% in the fifth layer and more than five layers of materials, and the thickness of each layer of material is 60nm.

[0038] The preparation method of this thin film comprises the following steps:

[0039] (1) Prepare Bi respectively according to the local method described in embodiment 1 3.64 La 0.75 Ti 3 o 12 、 Bi 3.80 La 0.75 Ti 3 o 12 and Bi 3.97 La 0.75 Ti 3 o 12 Three kinds of precursor solutions, the concentration of the solution is 0.1mol / L;

[0040] (2) adopt the same method as example 1 to deposit the precursor solution on...

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Abstract

The invention discloses a lanthanide-doped bismuth titanate film. The film comprises at least five layers of materials, and the component of each layer of material is Bi(4-x)(1+y)LnxTi3O12, wherein Ln is one of lanthanides, x is a molar equivalent weight of the lanthanide, and x is more than or equal to 0.1 and less than or equal to 0.85; and excessive Bi element is added, y is the excessive percentage based on the weight of Bi, the y in the first layer of material is 5 to 15 percent, the y in the second to fourth layer of material is 10 to 20 percent, and the y in the fifth to over fifth layer of material is 15 to 25 percent. The invention also discloses a preparation method for the film. The preparation method of the invention has low cost and simple operation; and the prepared film (100) has high orientation preferential degree, improves the rectangular degree of polarized and ferroelectric hysteresis loops and the like, and is suitable for application.

Description

technical field [0001] The invention relates to a bismuth titanate thin film (BLnT thin film) doped with lanthanide element with high preferential orientation for integrating ferroelectric devices and a preparation method thereof, which belongs to the field of new microelectronic materials. Background technique [0002] Bi 4 Ti 3 o 12 Belonging to the bismuth-based layered perovskite family, its Curie point is 675°C, and it is a high Curie point ferroelectric material. However, its fatigue resistance is relatively poor, the leakage current is relatively large, and it is easy to age. The study found that Bi 4 Ti 3 o 12 The fatigue resistance of ferroelectric thin films can be significantly improved by lanthanide doping. However, due to its special crystal structure, Bi doped with lanthanides 4 Ti 3 o 12 The ferroelectric and piezoelectric properties of thin films (BLnT thin films for short) have very strong anisotropy. Studies have confirmed that the dosage of less...

Claims

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Application Information

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IPC IPC(8): C04B41/50
Inventor 胡广达王金翠程玲张红岩姜波武卫兵杨长红
Owner UNIV OF JINAN
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