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144results about How to "High rectangularity" patented technology

Near-infrared narrow-band optical filter used for somatosensory recognition system

InactiveCN103018812ALarge cutoff widthReduce thicknessOptical filtersAdhesiveBand-pass filter
The invention discloses a near-infrared narrow-band optical filter used for a somatosensory recognition system. The near-infrared narrow-band optical filter used for the somatosensory recognition system comprises a base plate and a narrow-band optical filter main film system and a cut-off film system which are respectively arranged on two opposite surfaces of the base plate. The narrow-band optical filter main film system and the cut-off film system are respectively stacked by high refractive index film layers and low refractive index film layers in alternative mode, the high refractive index film layers and the low refractive index film layers are deposited through a vacuum film coating method, and the central wavelength of a passing band of the narrow-band optical filter main film system is identical with that of an infrared emission light source of the somatosensory recognition system. The near-infrared narrow-band optical filter used for the somatosensory recognition system adopts the single base plate, and utilizes the scheme of stacking the main film system and the cut-off film system through double-face vacuum film coating; achieves the characteristics of being large in cut-off width, high in central wavelength transmission ratio and good in rectangular degree of the narrow-band optical filter of the somatosensory recognition system; reduces thickness of the optical filter; effectively prevents warping and deformation of the base plate caused by film layer stress; requires no optical adhesive; avoids multiple reflection; an can adapt to different temperature environments.
Owner:晋谱(福建)光电科技有限公司

Method for preparation of three-dimensional porous graphene carbon electrode material from livestock excrement

Belonging to capacitor energy storage devices, the invention provides a method for preparation of a three-dimensional porous graphene carbon electrode material from livestock excrement, and application of the prepared carbon electrode material in supercapacitors and other energy storage devices. The method includes: drying the selected sheep excrement to a constant weight, maintaining the original state or conducting crushing, then under atmosphere protection, conducting carbonization and activation treatment at an appropriate temperature, and then carrying out washing and drying, thus obtaining the carbon electrode material with sheep excrement as the raw material. The preparation method provided by the invention is simple, and the raw materials are renewable, rich in sources and low in cost, the method utilizes waste, purifies the environment, and can realize mass production and application implementation. The high-performance supercapacitor electrode material maintains high specific capacitance under large charge-discharge velocity, maintains stable performance, and has relatively high energy density. The electrode material prepared by the method provided by the invention is an excellent electrode material applied to supercapacitors, lithium ion batteries and other energy storage devices.
Owner:深圳为方能源科技有限公司

High-voltage-withstanding, low-electric-leakage and high-polarization strength bismuth ferrite thin film and preparation method thereof

The invention relates to a high-voltage-withstanding, low-electric-leakage and high-polarization strength bismuth ferrite thin film and a preparation method thereof. The high-voltage-withstanding, low-electric-leakage and high-polarization strength bismuth ferrite thin film comprises a base body, a bottom electrode, a bismuth ferrite dielectric layer and a top electrode, a mono-crystal oxide semiconductor substrate with lattice constant close to that of the bismuth ferrite is used as the base body, the bottom electrode is a conductive oxide thin film, and the top electrode is a metal thin film point electrode. The bottom electrode is deposited on the base body in a coaxial sputtering mode, then the bismuth ferrite dielectric layer is deposited on the bottom electrode in an off-axis sputtering mode, and at last the top electrode is deposited on the bismuth ferrite dielectric layer so that the thin film can be prepared. The prepared BiFeO3 thin film is in a rhombohedral shape and achieves height orientation, a ferroelectric hysteresis loop with good rectangularity is achieved under the room temperature, the intensity of polarization is high, the intensity of magnetization can reach 100 -110 micro coulombs / cm<2>, the voltage withstanding performance is good, and the maximum withstand voltage can achieve 50 v.
Owner:欧阳俊

Ultra-wide-band wave-trapping antenna

The invention discloses an ultra-wide-band wave-trapping antenna which comprises a base plate, a ground plate located on the back face of the base plate, a reversed-U-shaped parasitic open circuit branch knot, antenna radiation patches, antenna feeders and reversed-U-shaped gaps, wherein the antenna radiation patches, the antenna feeders and the reversed-U-shaped gaps are located on the front face of the base plate. A reversed-U-shaped wide slot is formed in the middle of the ground plate, the reversed-U-shaped parasitic open circuit branch knot is arranged inside the reversed-U-shaped wide slot, and coupling distances are reserved between reversed-U-shaped parasitic open circuit branch knot and the edges of the reversed-U-shaped wide slot. The antenna feeders are arranged on the middle lower portion of the base plate. The projections of the antenna radiation patches on the ground plate are located on the middle lower portion of the reversed-U-shaped wide slot, the reversed-U-shaped gaps are formed in the outer edges of the antenna radiation patches, and coupling distances are formed between the reversed-U-shaped gaps and the outer edges of the antenna radiation patches. A circle where the projections of the antenna radiation patches and the projections of the arc parts of the reversed-U-shaped gaps on the ground plate locate is concentric with the circle where the reversed-U-shaped wide slot and the arc part of the reversed-U-shaped parasitic open circuit branch knot locate. By loading the reversed-U-shaped gaps and the reversed-U-shaped parasitic open circuit branch knot simultaneously, the ultra-wide-band wave-trapping antenna has a wave trapping stop band which is good in rectangular degree, flat in stop band and controllable in band width.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Laminated-type ceramic radio-frequency low pass filter and preparation method therefor

The invention discloses a laminated-type ceramic radio-frequency low pass filter and a preparation method therefor. The low pass filter comprises four leading-out terminal electrodes and an inner circuit, wherein the electrodes are the input terminal positive electrode, the output terminal positive electrode and two common grounding terminals in sequence; and the inner circuit comprises an inner electrode which is formed by a plurality of built-in capacitors and a plurality of built-in inductors located in the three-dimensional spaces of different dielectric layers. The inductors are in vertical three-dimensional helical structure; and the dielectric layers of the inductors and the capacitors utilize high-frequency low-loss ceramic materials. According to the filter, the dielectric material layers are the high-frequency ceramic material layers; the capacitance and inductance of inner components can achieve minimal adjustment, and a monolithic structure can be realized easily; the preparation technology is mature; consistency is good; the filter is suitable for volume production; and therefore, the low pass filter has the advantages of high cut-off frequency, wide operating frequency range, high out-of-band rejection, good rectangular degree, high reliability and good radio-frequency usage consistency and the like.
Owner:SHENZHEN ZHENHUA FU ELECTRONICS +1
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