166results about How to "Good lithography performance" patented technology

The present invention relates to a novel photoresist composition that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist as well as novel photoacid generators.

The novel photoresist comprises a) a polymer containing an acid labile group, and b) a novel mixture of photoactive compounds, where the mixture comprises a lower absorbing compound selected from structure 1 and 2, and a higher absorbing compound selected from structure 4 and 5,

• • where, R₁ and R₂ R₅, R₆, R₇, R₈, and R₉ are defined herein; m=1–5; X⁻ is an anion, and Ar is selected from naphthyl, anthracyl, and structure 3,
  • where R₃₀, R₃₁, R₃₂, R₃₃, and R₃₄ are defined herein.

The present invention relates to a method of fabricating a nanoscale multi-junction quantum dot device wherein it can minimize constraints depending on the number or shape of patterns and a line width, and in particular, overcome shortcomings depending on the proximity effect occurring between patterns while employing the advantages of electron beam lithography to the utmost by forming a new conductive layer between the patterns and utilizing it as a new pattern.

The present invention relates to an antireflective coating composition comprising a crosslinking agent, a polymer comprising at least one chromophore group and at least one hydroxyl and/or a carboxyl group, and an additive, further where the additive has structure 1 and comprises at least one arylene-hydroxyl moiety,

where Y is selected from an carboxylate anion or sulfonate anion, R₁, R₂, and R₃ are independently selected from unsubstituted C₁-C₈ alkyl, substituted C₁-C₈ alkyl, aryl and arylene-hydroxyl; X₁, X₂, and X₃ are independently selected from direct valence bond and C₁-C₈ alkylene group, and, n=1, 2 or 3. The invention further relates to a process for using the composition.

A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid, a basic-compound component (C) and an acid-generator component (B) which generates acid upon exposure, the component (B) including a compound represented by formula (b1), and the component (C) including at least one compound represented by formulas (c1) to (c3) (wherein Z¹ represents a ring skeleton-containing hydrocarbon group, Q¹ represents a divalent linking group containing oxygen, Y¹ represents a fluorinated alkylene group, M⁺ represents an organic cation, R¹ represents a fluorinated alkyl group or a hydrocarbon group, L₁⁺ and L₂⁺ represents a sulfonium or an iodonium, Z² represents a hydrogen atom or a hydrocarbon group, Y² represents a single bond or a divalent linking group containing no fluorine, R² represents an organic group, Y³ represents an alkylene group or an arylene group; and Rf represents a fluorine-containing hydrocarbon group).

A method of producing a polymeric compound containing a structural unit that decomposes upon exposure to generate an acid, the method including: synthesizing a precursor polymer by polymerizing a water-soluble monomer having an anionic group, washing the precursor polymer with water, and subsequently subjecting the precursor polymer to a salt exchange with an organic cation. Also, a polymeric compound produced using the method of producing a polymeric compound, and a method of forming a resist pattern using the resist composition.

The invention relates to a method for manufacturing a graphical sapphire substrate. The method comprises the following steps of: performing spin-coating treatment on a substrate to be photoetched; aligning and installing a mask plate and the substrate and installing the mask plate above the substrate according to set distance; performing projection exposure according to preset exposure conditions; performing developing treatment on the exposed substrate; performing roasting treatment on the developed substrate, and taking photoresist on the surface of the substrate as an etching mask; after setting the temperature and the vacuum degree of an etching cavity, the temperature of a shield cover and the control temperature of a cooling circulation mechanism, placing the roasted substrate on a slide glass base station in the etching cavity; introducing an etching gas for etching the substrate; controlling etching speed and quality by anode radio frequency source power and bias radio frequency source power; and simultaneously, cooling the slide glass base station by using the cooling circulation mechanism. By the method, the graphical substrate production efficiency is high and the luminous efficiency of a chip produced by using the substrate is high and stable.

A polymer containing an anion part which generates acid upon exposure on at least one terminal of the main chain, and at least one structural unit selected from the group consisting of a structural unit (a0) containing a —SO₂-containing cyclic group, a structural unit (a3) containing at least one group selected from the group consisting of —OH, —COOH, —CN, —SO₂NH₂ and —CONH₂ and a structural unit (a5) which generates acid upon exposure.

The invention provides positive-acting chemically-amplified photoresist compositions that can provide excellent lithographic performance as well as significantly enhanced storage stability. In one aspect, photoresist compositions are provided that comprise a solvent that is free of hydroxy groups (i.e. non-hydroxylic solvent), a resin binder and a photoactive compound that exhibits enhanced and long-term solubility in the solvent. In a further aspect, resists are provided that are formulated in a hydroxyl-containing solvent such as ethyl lactate and that contains a sulfonium salt photoactive compound that includes a sulfonate counter anion that can provide enhanced storage stability for the resist.

A resist composition comprising a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid, an acid-generator component (B) which generates acid upon exposure, and a nitrogen-containing organic compound (D), the nitrogen-containing organic compound (D) including a nitrogen-containing polymeric compound (D1) having a structural unit (d0) containing a nitrogen atom in the side chain thereof.

A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) represented by general formula (b1-1) shown below (in the formula, R^X represents a divalent aliphatic group of 3 to 20 carbon atoms; R^Y represents a monovalent aliphatic group of 3 to 20 carbon atoms having —C(═O)—O— or —S(═O)₂—; each of R¹ and R² independently represents a divalent linking group; and Z⁺ represents a monovalent organic cation).

There are provided a novel compound, a polymeric compound, a resist composition, an acid generator and a method of forming a resist pattern

• • the compound represented by general formula (1-1):
  • wherein each of R¹ and R³ independently represents a single bond or a divalent linking group; A represents a divalent linking group; each of R² and R⁴ independently represents a hydroxyl group, a hydrocarbon group which may have a substituent, or a group represented by general formula (1-an1), (1-an2) or (1-an3), provided that at least one of R² and R⁴ represents a group represented by general formula (1-an1), (1-an2) or (1-an3); and n0 is preferably 0 or 1, and
  • wherein Y¹ represents a single bond or —SO₂—; R⁵ represents a linear or branched monovalent hydrocarbon group of 1 to 10 carbon atoms, cyclic monovalent hydrocarbon group of 3 to 20 carbon atoms or monovalent hydrocarbon group of 3 to 20 carbon atoms having a cyclic partial structure which may be substituted with a fluorine atom; and M⁺ represents an organic cation or a metal cation,

A resist composition containing a base component (A) that exhibits changed solubility in a developing solution under action of acid, a photoreactive quencher (C), and an acid generator component (B) that generates acid upon exposure, and further containing an acid (G) having a pKa of 4 or less.

A (meth)acrylate compound having an acid-labile ester group, a photosensitive polymer, and a resist composition including the same, the (meth)acrylate compound being represented by the following Chemical Formula 1

According to the present invention there is provided a heat-sensitive imaging material for making lithographic printing plates which require no processing. The heat-sensitive imaging element comprises on a lithographic base having a hydrophilic surface a metallic or metal oxide layer and on top thereof an oleophobic polymeric layer having a thickness of less than 5 mu m and comprising a polymer containing phenolic groups.

An alkali soluble resin is disclosed comprising a first monomeric unit including at least one sulfonamide group and a second monomeric unit derived from the monomer according to the following structure (I) wherein R¹ represents a structural moiety comprising an ethylenically unsaturated polymerisable group; R², R³ and R⁴ independently represent hydrogen, an optionally substituted alkyl, alkenyl, alkynyl, alkaryl, aralkyl, aryl or heteroaryl group or, the necessary atoms to form a five to eight membered ring.

A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, (A) including (A1) including (a0) and (a2), and the resist composition having a Tf temperature of lower than 170° C. (└La⁰¹ represents —COO—, —CON(R′)— or a divalent aromatic group, R′ represents a hydrogen atom or a methyl group, Va⁰¹ represents a linear alkylene group of at least 3 carbon atoms, A⁻ represents an anion-containing group, M^m+ represents an organic cation, Ya²¹ represents a single bond or divalent linking group, La²¹ represents —O—, —COO—, —CON(R′)— or —OCO—, R′ represents a hydrogen atom or a methyl group, and Ra²¹ represents a lactone-containing group, a carbonate containing group or an —SO₂— containing group.

The invention relates to a method for manufacturing a patterning inductive coupling plasma sapphire substrate. The process for manufacturing the patterning inductive coupling plasma sapphire substrate comprises the following steps: conducting cleaning processing on the sapphire substrate; conducting alignment installation on sapphire and the substrate, arranging uniform glue on the front face according to the set distance, and coating the uniform glue on the substrate; 1.3, conducting projection exposure according to the preset exposure condition; conducting developing processing on the substrate after the exposure, conducting dry-etching processing on the substrate after developing, and using photoresist on the surface of the substrate as an etching mask; setting the temperature and the vacuum degree of an inductive coupling plasma etching cavity, and the control temperature of a cooling circulation machine, and then placing the substrate after the dry-etching processing into a slide glass base station in the etching cavity; etching the substrate by filling inductive coupling plasma etching gas into the substrate, and controlling the speed and quality of etching by outputting frequency source power and refraction frequency source power; meanwhile, cooling the slide glass base station through the cooling circulation machine. According to the method for manufacturing the inductive coupling plasma sapphire substrate, the productivity and the graphical consistency are greatly improved, the rate of finished products is high, and the process is stable.

The invention discloses an absorption method of a warped wafer and a device using the absorption method, belongs to the technical field of semiconductors, and is designed for solving the problem thatabsorption for an existing warped wafer is impossible. The method includes the steps of using a normal wafer to form an absorption normal state on a sucker, using a warped wafer to replace the normalwafer; horizontally adjusting and/or rotationally adjusting the position of the warped wafer on the sucker until the warped wafer is absorbed on the sucker. The device comprises the sucker connected to a vacuum system, a plurality of suction holes formed in the sucker, and a control switch arranged on the vacuum system. According to the method for absorbing warped wafers, the wafers are not abandoned because of warping, so that as many wafers as possible can be successfully cut into chips. The rate of finished products is improved, and the cost is reduced. The device disclosed by the inventioncan be used for photoetching the warped wafer by using the absorption method, so that the wafers are prevented from being abandoned, and the photoetching effect is good.