38results about How to "High dry etch resistance" patented technology

The invention provides an organic film composition comprises (A) a heat-decomposable polymer, (B) an organic solvent, and (C) an aromatic ring containing resin, with the weight reduction rate of (A) the heat-decomposable polymer from 30° C. to 250° C. being 40% or more by mass. There can be provided an organic film composition having not only a high dry etching resistance but also an excellent filling-up or flattening characteristics.

A polymer is composed of recurring units of hydroxyvinylnaphthalene, (meth)acrylic units having a lactone ring fused to a bridged ring, and (meth)acrylic units having acid labile groups. A positive resist composition comprising the polymer as a base resin, when exposed to high-energy radiation and developed, exhibits a high sensitivity, a high resolution, and a minimal line edge roughness due to controlled swell during development.

A polymerizable compound having a fluorinated substituent (Z) represented by the general formula (1), an adamantane structure and a polymerizable group (A) having the structure represented by the general formula (1), a production method thereof, and a photoresist composition, a thermocurable resin composition and a photocurable resin composition containing a polymer obtained using the polymerizable compound are provided. Use of the polymerizable compound with the adamantane structure and a resin composition thereof in the present invention provides in the field of photolithography the effect of preventing a liquid immersion medium from penetration and improving dry etching resistance in a liquid immersion exposure method as well as reducing adhesion to a mold and improving dry etching resistance in a nanoimprint method.

Resist underlayer film-forming composition for forming resist underlayer film with high dry etching resistance, wiggling resistance and exerts good flattening property and embedding property for uneven parts, including resin obtained by reacting organic compound A including aromatic ring and aldehyde B having at least two aromatic hydrocarbon ring groups having phenolic hydroxy group and having structure wherein the aromatic hydrocarbon ring groups are bonded through tertiary carbon atom. The aldehyde B may be compound of Formula (1):

The obtained resin may have a unit structure of Formula (2):

Ar¹ and Ar² each are C_6-40 aryl group. The organic compound A including aromatic ring may be aromatic amine or phenolic hydroxy group-containing compound. The composition may contain further solvent, acid and/or acid generator, or crosslinking agent.

Forming resist pattern used for semiconductor production, including forming resist underlayer film by applying the resist underlayer film-forming composition onto semiconductor substrate and baking it.

There is provided a composition for forming a resist underlayer film which has high dry-etching resistance and wiggling resistance, and achieves excellent planarizing properties for a semiconductor substrate surface having level differences or irregular portions. A resist underlayer film-forming composition including a phenol novolac resin that is obtained by causing a compound that has at least three phenolic groups, in which each of the phenolic groups has a structure bonded to a tertiary carbon atom or has a structure bonded to a quaternary carbon atom to which a methyl group binds, to react with an aromatic aldehyde or an aromatic ketone in the presence of an acid catalyst. The phenol novolac resin preferably contains a unit structure of Formula (1), a unit structure of Formula (2), a unit structure of Formula (3), a unit structure of Formula (4), or a combination of these unit structures:

An organic film composition including a compound represented by the following general formula (1),

wherein n1 and n2 each independently represent 0 or 1; “W” represents a single bond or any of structures represented by the following formula (2); R₁ represents any of structures represented by the following general formula (3); m1 and m2 each independently represent an integer of 0 to 7, with the proviso that m1+m2 is 1 to 14.

There can be provided an organic film composition for forming an organic film having dry etching resistance as well as advanced filling/planarizing characteristics.

The invention provides a compound for forming an organic film having a partial structure represented by the following formula (vii-2),

wherein R¹ represents a linear, branched or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms, and a methylene group constituting R¹ may be substituted by an oxygen atom; a+b is 1, 2 or 3; c and d are each independently 0, 1 or 2; x represents 0 or 1, when x=0, then a=c=0; L₇ represents a linear, branched or cyclic divalent organic group having 1 to 20 carbon atoms, L_8′ represents the partial structure represented by the following formula (i), 0≦o<1, 0<p≦1 and o+p=1,

wherein the ring structures Ar3 represent a substituted or unsubstituted benzene ring or naphthalene ring; R⁰ represents a hydrogen atom or a linear, branched or cyclic monovalent organic group having 1 to 30 carbon atoms; and L₀ represents a divalent organic group. There can be provided an organic film composition for forming an organic film having high dry etching resistance as well as advanced filling/planarizing characteristics.

The (meth)acrylate of the present invention is represented by the following formula (1). The (meth)acrylate can be produced by first producing a lactone by reducing an addition product obtained by the Diels-Alder reaction between 1,3-diene and maleic anhydride, and then hydrating the lactone to produce an alcohol followed by (meth)acrylation of the alcohol. A polymer produced by (co)polymerizing a monomer composition comprising the (meth)acrylate of the present invention is excellent in transparency, dry etching resistance, and solubility in organic solvents, and so it is preferably used as a resin for a chemically amplified resist composition.

wherein each of R¹, R², R³ and R⁴ represents a hydrogen atom, a methyl group or an ethyl group; either one of X¹ or X² represents a (meth)acryloyloxy group and the other represents a hydrogen atom; both A¹ and A² represent hydrogen atoms, or A¹ and A² form —O—, —CH₂— or —CH₂CH₂—.

An object of the present invention is to provide a composition for formation of etching stopper layer, which can simultaneously realize dry etching selectivity and low permittivity, and a production process of a semiconductor device using the same. This object can be attained by a composition for formation of etching stopper layer, comprising a silicon-containing polymer, the silicon-containing polymer contained in the composition comprising a disilylbenzene structure, and a production process of a semiconductor device comprising forming an etching stopper layer using the composition.

The present invention provides photoacid generators for use in chemically amplified resists and lithographic processes using the same.

A problem of The present invention is to provide a curable composition capable of forming a resist which can be easily washed after curing and which has high dry etching resistance and excellent precision of fine pattern transfer, also provide a resist film and a laminate each containing the curable composition, and further provide a pattern forming method using the resist film. The problem of the present invention can be solved by providing a curable composition containing a multifunctional polymerizable monomer (A) which has two or more groups having a polymerizable group and has at least one group Q having a polymerizable group represented by formula (1) below, the amount of silicon atoms in an nonvolatile content being 10 wt % or more.

A polymer used for a negative type resist composition having a first repeating unit of a Si-containing monomer unit, a second repeating unit having a hydroxy group or an epoxy ring and copolymerized with the first repeating unit is provided. The first repeating unit is represented by the following formula:

wherein R₁ is a hydrogen atom or a methyl group, X is a C₁–C₄ alkyl or alkoxy group, and n is an integer from 2 to 4. Also, there is provided a negative type resist composition including the polymer which is an alkali soluble base polymer, a photoacid generator and a crosslinking agent cross linkable in the presence of an acid.

A photocurable composition contains a polymerizable compound (A) satisfying O_A=N_A/(N_C,A−N_O,A), wherein N_A, N_C,A and N_O,A represent the total number of atoms, the number of carbon atoms, and the number of oxygen atoms, respectively, in (A); and a non-polymerizable component (E) containing at least one compound (X) including a photopolymerization initiator (B), in a proportion of 10% to 50% relative to the total weight of (A) and (E). The component (E) has a weight average molecular weight of 250 or less. The compound (X) satisfies O_X=N_X/(N_C,X−N_O,X). N_X, N_C,X and N_O,X represent the total number of atoms, the number of carbon atoms, and the number of oxygen atoms, respectively, in the corresponding compound (X). The composition satisfies: O_A−O_E>1.00; and O_AE<3.40. O_E and O_AE represent the molar fraction weighted averages of O_X's and of O_A and O_E, respectively.