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Composition for forming etching stopper layer

An etching stop layer, composition technology, applied in coatings, electrical components, semiconductor/solid-state device manufacturing, etc., can solve problems such as changing production processes

Inactive Publication Date: 2006-11-15
MERCK PATENT GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method should substantially change the production process, and cannot use such a conventional production process without difficulty

Method used

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  • Composition for forming etching stopper layer
  • Composition for forming etching stopper layer
  • Composition for forming etching stopper layer

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0073] In addition to using 105.75g of phenyltrichlorosilane (PhSiCl 3 ) and 39.4g of 1,4-bis(dimethylchlorosilyl)benzene were synthesized in the same manner as Comparative Synthesis Example 1 except that the starting materials were used. As a result, about 63 g of highly viscous polymer 1 was obtained.

[0074] The molecular weight of Polymer 1 was measured. As a result, the number average molecular weight was 1500, and the weight average molecular weight was 4000.

[0075] The FT-IR of this polymer 1 was measured. As a result, in addition to the absorption observed in the polymer A prepared in Comparative Synthesis Example 1, there was also an absorption at 780 cm -1Absorption attributed to adjacent hydrogens in the benzene ring was observed nearby. The adjacent hydrogens in the benzene ring come from 1,4-bis(dimethylchlorosilyl)benzene, that is to say the disilylbenzene structure. Observations indicated that 1,4-bis(dimethylchlorosilyl)benzene was incorporated into Pol...

Synthetic example 2

[0077] The air in the reaction vessel installed in the thermostatic chamber was replaced with dry nitrogen. Then, dissolved in 1000ml xylene, made of 47g phenyltrichlorosilane (PhSiCl 3 ), 56g diphenyldichlorosilane (Ph 2 SiCl 2 ), 3.8g methyldichlorosilane (MeSiHCl 2 ), and a solution consisting of 50 g of 1,4-bis(dimethylchlorosilyl)benzene was introduced into the reaction vessel. Next, the internal temperature of the reaction vessel was set to -5°C. When the temperature of the solution reached a predetermined temperature, a mixed solution consisting of water and pyridine prepared by dissolving 13 g of water in 1000 ml of pyridine was introduced into the reaction vessel at a rate of about 30 ml / min. In this case, at the time of introduction of the mixed solution, a reaction of halosilane and water occurred, and, thereby, the internal temperature of the container rose to -2°C. After the introduction of the mixed solution consisting of water and pyridine was completed, th...

Synthetic example 3

[0080] Polymer 3 having a disilylbenzene structure was synthesized in the same manner as in Synthesis Example 2 except that 66.3 g of methyltrichlorosilane was used instead of phenyltrichlorosilane and diphenyldichlorosilane. In Polymer 3, the silicon content in the disilylbenzene structure was 28.5 mol % based on the total moles of silicon contained in Polymer 3 . The carbon content in polymer 3 was 25% by weight.

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Abstract

An object of the present invention is to provide a composition for formation of etching stopper layer, which can simultaneously realize dry etching selectivity and low permittivity, and a production process of a semiconductor device using the same. This object can be attained by a composition for formation of etching stopper layer, comprising a silicon-containing polymer, the silicon-containing polymer contained in the composition comprising a disilylbenzene structure, and a production process of a semiconductor device comprising forming an etching stopper layer using the composition.

Description

technical field [0001] The present invention relates to a composition for producing a semiconductor device, a method for producing a semiconductor device using the composition, and a semiconductor device produced using the composition. More specifically, the present invention relates to a composition for forming an etch stop layer, the composition is used for forming an etch stop layer when a semiconductor device is produced by a damascene method, a method of producing a semiconductor device using the composition, and using Semiconductor devices produced from the composition. Background technique [0002] In recent years, the demand for integration of semiconductor devices has been increasing, and the trend of design rules is a steadily increasing integration density. This trend leads to more complex semiconductor device structures and, at the same time, to demands for increased operating speeds and reduced power consumption. In order to meet these demands, it has been pro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/312C08G77/52C09D183/14H01L21/3065H01L21/311H01L21/768
CPCC08G77/52C09D183/14H01L21/31116H01L21/7681H01L21/76829H01L21/76835H01L21/02126H01L21/3121
Inventor 田代裕治青木宏幸石川智规
Owner MERCK PATENT GMBH
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