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Resist underlayer film forming composition containing novolac resin reacted with aromatic methylol compound

A novolak resin, aromatic compound technology, applied in the coating, the photoengraving process of the pattern surface, the photosensitive material used in the opto-mechanical equipment, etc., can solve the problems such as the decline of the resolution and the easy collapse of the resist pattern. , to achieve the effect of excellent spin coating, high dry etching resistance and high solubility

Active Publication Date: 2017-05-10
NISSAN CHEM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This is because the resolution decreases due to miniaturization, and the formed resist pattern tends to collapse

Method used

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  • Resist underlayer film forming composition containing novolac resin reacted with aromatic methylol compound
  • Resist underlayer film forming composition containing novolac resin reacted with aromatic methylol compound
  • Resist underlayer film forming composition containing novolac resin reacted with aromatic methylol compound

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0123] Add 29.96g propylene glycol monomethyl ether in the 2-phenylindole of 8.00g, the 1-pyrene formaldehyde of 5.72g, the 2-hydroxybenzyl alcohol of 2.06g, the methanesulfonic acid of 0.36g, under nitrogen atmosphere, in Stirring was performed at 130° C. for 24 hours. The reaction solution was added dropwise to methanol, and the precipitated resin was filtered, washed, and dried under reduced pressure at 70° C. to obtain 6.15 g of a resin containing the formula (3-1). In addition, the weight average molecular weight of this resin measured by GPC in terms of standard polystyrene was 1370.

[0124] Next, 1.00 g of the obtained resin and 0.002 g of a surfactant (manufactured by DIC Corporation, product name: Megaface [trade name] R-40, fluorine-based surfactant) were dissolved in 5.70 g of propylene glycol monomethyl ether, A composition for forming a resist underlayer film was prepared in 13.30 g of propylene glycol monomethyl ether acetate.

Embodiment 2

[0126] Add 29.96g propylene glycol monomethyl ether in the 2-phenylindole of 8.00g, the 1-pyrene formaldehyde of 5.72g, the 4-hydroxybenzyl alcohol of 2.06g, the methanesulfonic acid of 0.36g, under nitrogen atmosphere, in Stirring was performed at 130° C. for 24 hours. The reaction solution was added dropwise to methanol, and the precipitated resin was filtered, washed, and then dried under reduced pressure at 70° C. to obtain 5.52 g of a resin containing formula (3-2). In addition, the weight average molecular weight of this resin measured by GPC in terms of standard polystyrene was 1100.

[0127] Next, 1.00 g of the obtained resin and 0.002 g of a surfactant (manufactured by DIC Corporation, product name: Megaface [trade name] R-40, fluorine-based surfactant) were dissolved in 5.70 g of propylene glycol monomethyl ether, A composition for forming a resist underlayer film was prepared in 13.30 g of propylene glycol monomethyl ether acetate.

Embodiment 3

[0129] Add 31.32 g of propylene glycol monosodium to 7.50 g of 2-phenylindole, 5.36 g of 1-pyrene formaldehyde, 3.70 g of 2,6-di-tert-butyl-4-hydroxymethylphenol, and 0.34 g of methanesulfonic acid. Methyl ether was stirred at 130° C. for 24 hours under a nitrogen atmosphere. The reaction solution was added dropwise to methanol, and the precipitated resin was filtered, washed, and then dried under reduced pressure at 70° C. to obtain 6.45 g of a resin containing formula (3-3). In addition, the weight average molecular weight of this resin measured by GPC in terms of standard polystyrene was 1510.

[0130] Next, 1.00 g of the obtained resin and 0.002 g of a surfactant (manufactured by DIC Corporation, product name: Megaface [trade name] R-40, fluorine-based surfactant) were dissolved in 5.70 g of propylene glycol monomethyl ether, A composition for forming a resist underlayer film was prepared in 13.30 g of propylene glycol monomethyl ether acetate.

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Abstract

To provide a resist underlayer film for lithography, which has high solubility in a resist solvent (a solvent used in lithography) for developing good film formability by coating and a dry etching rate selectivity lower than that of the resist. A resist underlayer film forming composition, which contains a novolac resin containing a structure (C) that is obtained by a reaction between an aromatic ring of an aromatic compound (A) and a hydroxy group-containing aromatic methylol compound (B). The aromatic compound (A) is a component for constituting the structure (C) that is contained in the novolac resin. The hydroxy group-containing aromatic methylol compound (B) is represented by formula (1). The hydroxy group-containing aromatic methylol compound (B) is 2-hydroxybenzyl alcohol, 4-hydroxybenzyl alcohol or 2,6-di-tert-butyl-4-hydroxymethyl phenol.

Description

technical field [0001] The present invention relates to a resist underlayer film-forming composition for photolithography that is effective in processing a semiconductor substrate, a resist pattern forming method using the resist underlayer film-forming composition, and the manufacture of a semiconductor device method. Background technique [0002] Conventionally, in the manufacture of semiconductor devices, microfabrication has been performed by photolithography using a photoresist composition. The aforementioned microfabrication is a processing method in which a thin film of a photoresist composition is formed on a substrate to be processed such as a silicon wafer, and an active ray such as ultraviolet rays is irradiated thereon through a mask pattern on which a pattern of a semiconductor device is drawn. Development is performed, and the obtained photoresist pattern is used as a protective film, and an etching process is performed on a substrate to be processed such as a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11C08G8/24C08G14/06C08G14/073C08G14/09
CPCC08G14/06C08G12/26C09D161/34G03F7/094G03F7/11G03F7/26C08G8/24G03F7/038G03F7/039G03F7/162G03F7/168G03F7/2004G03F7/2006G03F7/2037G03F7/322G03F7/325G03F7/38H01L21/3081H01L21/3086H01L21/31116H01L21/31144
Inventor 西卷裕和坂本力丸桥本圭祐远藤贵文
Owner NISSAN CHEM CORP
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