96 results about "Line edge roughness" patented technology

In a multilayer ceramic capacitor, a segregation amount of silicon and magnesium on an outer layer side of an outermost internal electrode layer is larger than a segregation amount of silicon and magnesium on an inner layer side of the outermost internal electrode layer, and when a region defined by an existence region of the outermost internal electrode layer and a segregation region of silicon and magnesium in contact with the outermost internal electrode layer is defined as a first region, a line edge roughness of an outer layer side of the first region is larger than a line edge roughness of an inner layer side of the first region.

To form a resist pattern having good line edge roughness (LER).SOLUTION: A carboxylic acid generator contains a carboxylate represented by formula (I).SELECTED DRAWING: None

To provide an acid generator, a resist composition and the like which allow a resist pattern having good line edge roughness to be produced.SOLUTION: The acid generator contains a salt represented by formula (I), and the resist composition contains the acid generator. [In the formula, Q1, Q2, R1 and R2 each represent an H atom, an F atom or the like; z represents an integer of 0-6; X1 and X2 each represent -CO-O-, -O-CO- or the like; L1 and L2 each represent a single bond or a substituted / unsubstituted hydrocarbon group; W1 represents a cyclic hydrocarbon group; X represents a halogen atom or a haloalkyl group; R3 and R4 each represent a halogen atom, a haloalkyl group or the like; R5 represents a hydrogen atom or a group forming an acetal structure or the like; m3 and m4 represent integers of 0-3, m5 represents an integer of 0-4, and m6 represents 2 or 3; Z+ represents an organic cation; L10 represents a single bond or an alkanediyl group; Raa1 and Raa2 each represent an H atom or a hydrocarbon group; Xa represents a single bond, an O atom or the like; Raa3 represents a hydrocarbon group; and m51 and m52 each represent 0 or 1.]SELECTED DRAWING: None

The invention discloses an etching groove and through hole line edge roughness optimization method, which belongs to the technical field of integrated circuit manufacturing, and comprises the following steps of: exposing on a substrate with a hard mask layer through a photoetching process to obtain a photoresist pattern; etching the photoresist pattern through an ion beam etching process to reduce the surface roughness of the side wall of the photoresist pattern groove or through hole structure; forming a covering film layer on the substrate through a deposition process; exposing the upper surface of the photoresist through a first etching process; the photoresist is etched through a second etching process, and the part, located on the side wall of the photoresist, of the covering film layer is left to serve as a new mask plate; the substrate is etched downwards through a third etching process, and the pattern of the new mask plate is transferred to the hard mask layer in the substrate; and removing the unwanted surface structure to obtain the required semiconductor structure. According to the method, the roughness of the line edge can be greatly reduced, a flat surface is obtained, surface defects are few, meanwhile, the cost is reduced, the efficiency is improved, and the requirement for higher fineness is met.

Methods of forming DRAM bit lines to improve line edge roughness (LER) and reduce resistance are described. The methods include the steps of implanting an inert species into a bit line metal layer having a first grain size on a substrate to form an amorphized bit line metal layer having a second grain size, the second grain size being smaller than the first grain size. A film stack is then deposited on the amorphized bit line metal layer. The film stack and the amorphized bit line metal layer are etched to form a patterned film stack on the substrate. The patterned film stack on the substrate is thermally annealed.

To provide a resist composition capable of producing a resist pattern having good line edge roughness.SOLUTION: The resist composition contains a compound represented by formula (I), a resin having an acid-labile group, and an acid generator. [In the formula, R2 represents * -X1-Ph - L1 - OH. Ph represents a substituted or unsubstituted phenylene; R3 represents a halogen atom, a hydroxy group, a haloalkyl group or an alkyl group, and - CH2 - included in the alkyl group may be replaced by - O - or - CO -. m2 is an integer of 1 to 4, m3 is an integer of 0 to 3, provided that 1 ≤ m2 + m3 ≤ 4, and one or more of L1, R1, R2, and R3 have a halogen atom. ] SELECTED DRAWING: None

This application provides a semiconductor structure and a method for trimming the same. A first structure to be trimmed is provided. The first structure to be trimmed includes a substrate layer, a first film layer, and a second film layer stacked sequentially. The second film layer includes multiple line structures, each with a first roughness. A third film layer is deposited on the first structure to be trimmed to obtain the second structure to be trimmed. The second structure to be trimmed is then subjected to ion beam etching to obtain a trimmed structure. In the trimmed structure, the line structures in the second film layer have a smaller second roughness. In this application, the deposited third film layer has different thicknesses at different locations. The first thickness of the third film layer on the top surface of the second film layer is greater than its second thickness on the side surface of the second film layer. This difference in thickness is used to compensate for differences in the etching rate of the second film layer. While improving the linewidth roughness or line edge roughness, this method ensures that the top of the second film layer is not excessively etched away, reducing top loss.

To provide a photoresist having excellent photon absorptivity and low line edge roughness.SOLUTION: A multilayer molecular film photoresist, comprising: a plurality of molecular beams extending in an upper direction of a substrate and arranged in a horizontal direction, wherein each of the molecular beams includes a plurality of inorganic monomolecules and organic monomolecules interposed between at least some of the inorganic monomolecules, the inorganic monomolecules and the organic monomolecules being connected to each other by bonding.SELECTED DRAWING: Figure 1

To provide a compound, a resin, and a resist composition which allow a resist pattern having good line edge roughness to be produced.SOLUTION: The resist composition contains a resin containing a structural unit represented by formula (IP) [where Rbb1 represents a hydrogen atom, a halogen atom or the like].SELECTED DRAWING: None

To provide a semiconductor photoresist composition having excellent sensitivity and line edge roughness (LER) characteristics, and improved resolution, and a method of forming patterns using the semiconductor photoresist composition.SOLUTION: The present invention relates to a semiconductor photoresist composition including: a Sn-containing organometallic compound; a carboxylic acid compound represented by Chemical Formula 1; and a solvent, and a method of forming patterns using the semiconductor photoresist composition.SELECTED DRAWING: Figure 5

The present invention relates to a chemical amplification resist composition, a blank photomask, a resist pattern forming method, and a method for producing a polymer compound. The present invention aims to provide a chemical amplification resist composition that can satisfy good resolution, pattern shape, line edge roughness, and can suppress development residue defects that can become a cause of mask defects, and a resist pattern forming method using the same. The means for solving the problem is a chemical amplification resist composition characterized by containing: (A) a polymer compound containing one or two or more kinds of repeating units, and at least one or more kinds of repeating units among the repeating units being a repeating unit polymerized from 2 to 6 polymers of a residual oligomer of 1000 ppm or less of a polymerizable monomer.

To form a resist pattern having good line edge roughness (LER).SOLUTION: A resist composition contains a resin containing a structural unit represented by formula (I) and a structural unit having a group represented by formula (II-x).SELECTED DRAWING: None

To provide a phenol generator, a resist composition and the like which allow a resist pattern having good line edge roughness to be produced.SOLUTION: The phenol generator contains a phenol salt represented by formula (I) [where R4 represents a halogen atom or a hydrocarbon group, the hydrocarbon group may have a substituent, -CH2- contained in the hydrocarbon group may be substituted with -O-, -CO-, -S- or -SO2-, and the hydrocarbon group may contain a phenoxy anion; R5 represents an alkoxyalkyl group or a hydroxyalkyl group; m4 represents an integer of 0-4 and m5 represents an integer of 1-4, provided that 1≤m4+m5≤5 is satisfied; m2 represents an integer of 1-8; and Z+ represents an organic cation].SELECTED DRAWING: None

A chemically amplified resist composition contains (A) a polymer compound containing one or two or more kinds of repeating units, at least one kind of the repeating units is polymerized from a polymerizable monomer with not more than 1000 ppm of a residual oligomer in a form of dimer to hexamer. An object of the present invention is to provide: a chemically amplified resist composition capable of achieving favorable resolution, pattern profile, and line edge roughness, and simultaneously suppressing development-residue defect, which would otherwise cause mask defect; and a method for forming a resist pattern by using this composition.

The invention discloses a polyhedral oligomeric silsesquioxane photoresist grafted with a photoacid generator, which comprises polyhedral oligomeric silsesquioxane grafted with the photoacid generator and an organic solvent, the polyhedral oligomeric silsesquioxane grafted with the photoacid generator is one or more of compounds represented by formula (1): in the formula (1), R1 is an epoxy group, and R2 is an acid generating group. According to the invention, an acid-producing group is introduced into polyhedral oligomeric silsesquioxane, so that migration and diffusion of photoacid can be inhibited, and the problems of resolution reduction and line edge roughness increase caused by non-uniform distribution of a photoacid-producing agent and an acid diffusion effect are solved; the photoresist provided by the invention has higher sensitivity, contrast ratio and resolution and lower line edge roughness. The photoresist disclosed by the invention has the advantages that the sensitivity is obviously improved on the premise of keeping relatively good resolution ratio, and the photoresist has important application value and wide market prospect. (1)

An embodiment of the present invention increases the etching resistance of a photoresist in an EUV PR / SiON pattern using an ion beam etching apparatus to which grid pulsing is applied, so that the photoresist is etched less and SiON is etched more, thereby improving the etching selectivity. According to an embodiment of the present invention, it is possible to improve the LER through repetition of constant etching and deposition, thereby reducing process defects and enabling damage control.

To provide a salt, an acid generator and a resist composition capable of producing a resist pattern having good line edge roughness (LER).SOLUTION: There are provided a salt represented by a specific structure, an acid generator, and a resist composition containing the same.SELECTED DRAWING: None

This application provides a semiconductor device and a method for manufacturing the same, as well as an electronic device. The method includes: providing a substrate comprising a gate and / or a source and a drain; sequentially forming a first insulating material layer, a spin-coated carbon layer, an anti-reflective coating, and a patterned photoresist layer on the substrate; using the patterned photoresist layer as a mask, etching the anti-reflective coating and the spin-coated carbon layer to form a first via exposing a portion of the first insulating material layer; performing a deposition process to form a second insulating material layer at least on the sidewalls of the first via to define a second via; using the second insulating layer as a mask, etching the first insulating material layer at the bottom of the second via to expose the gate and / or the source and drain. The solution of this application can reduce the critical size of the second via, improve the integration and reliability of the device, and also repair linewidth roughness, line edge roughness, and roundness defects.

To provide a resist composition capable of producing a resist pattern having good line edge roughness.SOLUTION: The resist composition contains a resin containing a structural unit derived from a compound represented by a specific structure and a structural unit represented by formula (a1-2), an acid generator, and a carboxylate salt generating an acid weaker in acidity than an acid generated from the acid generator. [In the formulae, La2 represents -O - or the like; Ra7 represents an alkyl group, an alkenyl group, an alicyclichydrocarbon group, or the like; n1 represents an integer of 0 to 10; and n1 ' represents an integer of 0 to 3.]. ] SELECTED DRAWING: None

To provide a carboxylate, a carboxylic acid generator, and a resist composition which allow a resist pattern having good line edge roughness to be produced.SOLUTION: There are provided: a carboxylic acid generator containing a carboxylate represented by formula (I); and a resist composition. [In the formula, L10 represents a single bond or a substituted / unsubstituted hydrocarbon group; R5A and R5B each represent -X1-R10 or the like, and each X1 represents -CO-O-, -O-CO- or the like; R10 represents a base-labile group; L1A, L1B, L2 and L3 each represent a single bond or a substituted / unsubstituted alkanediyl group; X3 represents -O-, -CO- or the like; Ar1 and Ar2 each represent an aromatic hydrocarbon group; R3 and R6 each represent a fluorine atom, a fluorinated alkyl group or the like; and Z+ represents an organic cation.]SELECTED DRAWING: None

A method is described for depositing a conformal carbon-containing film on an EUV photoresist to reduce line edge roughness (LER). Exemplary processing methods can include flowing a first precursor over a patterned EUV surface to form a first portion of an initial carbon-containing film on the structure. The method can include removing the first precursor effluent from the patterned EUV photoresist. Then, a second precursor can be flowed over the patterned EUV photoresist to react with the first portion of the initial carbon-containing film. The method can include removing the second precursor effluent from the patterned EUV photoresist. The method can include etching the substrate to remove a portion of the carbon-containing film, exposing the upper surface of the patterned surface, and exposing the substrate between the patterned surfaces.

To provide a semiconductor photoresist composition having excellent sensitivity and line edge roughness (LER) characteristics and effective in improving bridging and scumming after pattern exposure, and a method of forming patterns using the composition.SOLUTION: The present invention relates to a semiconductor photoresist composition comprising a Sn-containing organometallic compound, D2O, and a solvent, and a method of forming patterns using the composition.SELECTED DRAWING: Figure 1

To provide a salt, an acid generator, and a resist composition which allow a resist pattern having good line edge roughness to be produced.SOLUTION: There are provided: an acid generator containing a salt represented by formula (I); and a resist composition. [In the formula, Q1, Q2, R11 and R12 each represent an H atom, an F atom or the like; z represents an integer of 0-6; X1 and X3 each represent -O-, -CO- or the like; X1A represents -CO-O-, -O-CO- or the like; mm1 represents 0 or 1; L10 represents a single bond or a substituted / unsubstituted hydrocarbon group; R5A and R5B each represent -X1A-R10 or the like; R10 represents an acid-labile group; and Z+ represents an organic cation.]SELECTED DRAWING: None

To provide an acid generator and a resist composition capable of producing a resist pattern having good line edge roughness.SOLUTION: The acid generator and the resist composition contain a salt represented by formula (I). In the formula, Q1, Q2, R1 and R2 are each independently H, F, a perfluoroalkyl group or an alkyl group; Z represents an integer of 0 to 6. mm1 represents 0 or 1. L1 represents a single bond or a substituted or unsubstituted alkyl group, and - CH2 - included in the group may be replaced by - O -, - S -, - CO - or - SO2 -; X1 represents a single bond, -CO -, -O -, or a group obtained by combining these, or the like. R5 represents hydrogen, halogen, or alkyl optionally substituted with halogen. ZI + represents an organic cation. ] SELECTED DRAWING: None

Disclosed herein are techniques for determining line edge roughness and / or line width roughness metrics. In some embodiments, a method may involve obtaining a line pattern to be analyzed to determine the line edge roughness (LER) and / or the line width roughness (LWR) metrics. The method may further involve obtaining data points corresponding to one or more edges of the line pattern. The method may further involve determining the LER and / or the LWR metrics based at least in part on a spatial frequency analysis of the obtained data points.

To form a resist pattern having good line edge roughness (LER).SOLUTION: A carboxylic acid generator contains a carboxylate represented by formula (I).SELECTED DRAWING: None

To provide a compound, a resin, and a resist composition which allow a resist pattern having good line edge roughness to be produced.SOLUTION: The resist composition contains a compound represented by formula (I) or a resin containing a structural unit represented by formula (IP).SELECTED DRAWING: None

This application discloses a femtosecond laser process optimization method, apparatus, equipment, storage medium, and product, relating to the technical field of photomask repair. The method includes: acquiring the processing window size information of the area to be repaired; inputting dynamically generated candidate laser pulse energies and candidate pulse impact counts along with the processing window size information into a pre-trained line edge roughness prediction model to obtain the predicted line edge roughness; within a preset safety process constraint range, using an optimization algorithm to globally optimize the line edge roughness prediction model, with minimizing the predicted line edge roughness as the optimization objective, calculating the optimal combination of laser pulse energy and optimal pulse impact count; and outputting the optimal combination of laser pulse energy and optimal pulse impact count as recommended process parameters for the area to be repaired. This application achieves adaptive output of process parameters with optimal repair edge quality while avoiding material damage.

The present application provides sulfonate photoresist polymers of formula I or II, and their preparation and use. The polymers can be used as single-component photoresists without the need for additional acid generators, avoiding the problem of uneven distribution of components in multi-component photoresists. The resulting photoresist patterns have excellent resolution, contrast, and low line edge roughness.

An exemplary semiconductor processing method may include a substrate received in a processing region. A layer of silicon-containing material may be disposed on the substrate, a patterned resist material may be disposed on the layer of silicon-containing material, and a layer of carbon-containing material may be disposed on the patterned resist material and the layer of silicon-containing material. The method may include providing a hydrogen-containing precursor, a nitrogen-containing precursor, or both to a processing region of a semiconductor processing chamber, forming a plasma effluent of a hydrogen-containing precursor and / or a nitrogen-containing precursor, and contacting the substrate with the hydrogen-containing precursor and / or the plasma effluent of the nitrogen-containing precursor. The contacting may remove a portion of the layer of carbonaceous material. The method may include providing a fluorine-containing precursor to the processing region, forming a plasma effluent of the fluorine-containing precursor, and contacting the substrate with the plasma effluent of the fluorine-containing precursor.