44 results about "Line edge roughness" patented technology

Methods of forming DRAM bit lines to improve line edge roughness (LER) and reduce resistance are described. The methods include the steps of implanting an inert species into a bit line metal layer having a first grain size on a substrate to form an amorphized bit line metal layer having a second grain size, the second grain size being smaller than the first grain size. A film stack is then deposited on the amorphized bit line metal layer. The film stack and the amorphized bit line metal layer are etched to form a patterned film stack on the substrate. The patterned film stack on the substrate is thermally annealed.

To provide a resist composition capable of producing a resist pattern having good line edge roughness.SOLUTION: The resist composition contains a compound represented by formula (I), a resin having an acid-labile group, and an acid generator. [In the formula, R2 represents * -X1-Ph - L1 - OH. Ph represents a substituted or unsubstituted phenylene; R3 represents a halogen atom, a hydroxy group, a haloalkyl group or an alkyl group, and - CH2 - included in the alkyl group may be replaced by - O - or - CO -. m2 is an integer of 1 to 4, m3 is an integer of 0 to 3, provided that 1 ≤ m2 + m3 ≤ 4, and one or more of L1, R1, R2, and R3 have a halogen atom. ] SELECTED DRAWING: None

This application provides a semiconductor structure and a method for trimming the same. A first structure to be trimmed is provided. The first structure to be trimmed includes a substrate layer, a first film layer, and a second film layer stacked sequentially. The second film layer includes multiple line structures, each with a first roughness. A third film layer is deposited on the first structure to be trimmed to obtain the second structure to be trimmed. The second structure to be trimmed is then subjected to ion beam etching to obtain a trimmed structure. In the trimmed structure, the line structures in the second film layer have a smaller second roughness. In this application, the deposited third film layer has different thicknesses at different locations. The first thickness of the third film layer on the top surface of the second film layer is greater than its second thickness on the side surface of the second film layer. This difference in thickness is used to compensate for differences in the etching rate of the second film layer. While improving the linewidth roughness or line edge roughness, this method ensures that the top of the second film layer is not excessively etched away, reducing top loss.

To provide a photoresist having excellent photon absorptivity and low line edge roughness.SOLUTION: A multilayer molecular film photoresist, comprising: a plurality of molecular beams extending in an upper direction of a substrate and arranged in a horizontal direction, wherein each of the molecular beams includes a plurality of inorganic monomolecules and organic monomolecules interposed between at least some of the inorganic monomolecules, the inorganic monomolecules and the organic monomolecules being connected to each other by bonding.SELECTED DRAWING: Figure 1

The invention discloses a polyhedral oligomeric silsesquioxane photoresist grafted with a photoacid generator, which comprises polyhedral oligomeric silsesquioxane grafted with the photoacid generator and an organic solvent, the polyhedral oligomeric silsesquioxane grafted with the photoacid generator is one or more of compounds represented by formula (1): in the formula (1), R1 is an epoxy group, and R2 is an acid generating group. According to the invention, an acid-producing group is introduced into polyhedral oligomeric silsesquioxane, so that migration and diffusion of photoacid can be inhibited, and the problems of resolution reduction and line edge roughness increase caused by non-uniform distribution of a photoacid-producing agent and an acid diffusion effect are solved; the photoresist provided by the invention has higher sensitivity, contrast ratio and resolution and lower line edge roughness. The photoresist disclosed by the invention has the advantages that the sensitivity is obviously improved on the premise of keeping relatively good resolution ratio, and the photoresist has important application value and wide market prospect. (1)

An embodiment of the present invention increases the etching resistance of a photoresist in an EUV PR / SiON pattern using an ion beam etching apparatus to which grid pulsing is applied, so that the photoresist is etched less and SiON is etched more, thereby improving the etching selectivity. According to an embodiment of the present invention, it is possible to improve the LER through repetition of constant etching and deposition, thereby reducing process defects and enabling damage control.

To provide a salt, an acid generator and a resist composition capable of producing a resist pattern having good line edge roughness (LER).SOLUTION: There are provided a salt represented by a specific structure, an acid generator, and a resist composition containing the same.SELECTED DRAWING: None

This application provides a semiconductor device and a method for manufacturing the same, as well as an electronic device. The method includes: providing a substrate comprising a gate and / or a source and a drain; sequentially forming a first insulating material layer, a spin-coated carbon layer, an anti-reflective coating, and a patterned photoresist layer on the substrate; using the patterned photoresist layer as a mask, etching the anti-reflective coating and the spin-coated carbon layer to form a first via exposing a portion of the first insulating material layer; performing a deposition process to form a second insulating material layer at least on the sidewalls of the first via to define a second via; using the second insulating layer as a mask, etching the first insulating material layer at the bottom of the second via to expose the gate and / or the source and drain. The solution of this application can reduce the critical size of the second via, improve the integration and reliability of the device, and also repair linewidth roughness, line edge roughness, and roundness defects.

To provide a resist composition capable of producing a resist pattern having good line edge roughness.SOLUTION: The resist composition contains a resin containing a structural unit derived from a compound represented by a specific structure and a structural unit represented by formula (a1-2), an acid generator, and a carboxylate salt generating an acid weaker in acidity than an acid generated from the acid generator. [In the formulae, La2 represents -O - or the like; Ra7 represents an alkyl group, an alkenyl group, an alicyclichydrocarbon group, or the like; n1 represents an integer of 0 to 10; and n1 ' represents an integer of 0 to 3.]. ] SELECTED DRAWING: None

To provide an acid generator and a resist composition capable of producing a resist pattern having good line edge roughness.SOLUTION: The acid generator and the resist composition contain a salt represented by formula (I). In the formula, Q1, Q2, R1 and R2 are each independently H, F, a perfluoroalkyl group or an alkyl group; Z represents an integer of 0 to 6. mm1 represents 0 or 1. L1 represents a single bond or a substituted or unsubstituted alkyl group, and - CH2 - included in the group may be replaced by - O -, - S -, - CO - or - SO2 -; X1 represents a single bond, -CO -, -O -, or a group obtained by combining these, or the like. R5 represents hydrogen, halogen, or alkyl optionally substituted with halogen. ZI + represents an organic cation. ] SELECTED DRAWING: None

This application discloses a femtosecond laser process optimization method, apparatus, equipment, storage medium, and product, relating to the technical field of photomask repair. The method includes: acquiring the processing window size information of the area to be repaired; inputting dynamically generated candidate laser pulse energies and candidate pulse impact counts along with the processing window size information into a pre-trained line edge roughness prediction model to obtain the predicted line edge roughness; within a preset safety process constraint range, using an optimization algorithm to globally optimize the line edge roughness prediction model, with minimizing the predicted line edge roughness as the optimization objective, calculating the optimal combination of laser pulse energy and optimal pulse impact count; and outputting the optimal combination of laser pulse energy and optimal pulse impact count as recommended process parameters for the area to be repaired. This application achieves adaptive output of process parameters with optimal repair edge quality while avoiding material damage.

The present application provides sulfonate photoresist polymers of formula I or II, and their preparation and use. The polymers can be used as single-component photoresists without the need for additional acid generators, avoiding the problem of uneven distribution of components in multi-component photoresists. The resulting photoresist patterns have excellent resolution, contrast, and low line edge roughness.

An exemplary semiconductor processing method may include a substrate received in a processing region. A layer of silicon-containing material may be disposed on the substrate, a patterned resist material may be disposed on the layer of silicon-containing material, and a layer of carbon-containing material may be disposed on the patterned resist material and the layer of silicon-containing material. The method may include providing a hydrogen-containing precursor, a nitrogen-containing precursor, or both to a processing region of a semiconductor processing chamber, forming a plasma effluent of a hydrogen-containing precursor and / or a nitrogen-containing precursor, and contacting the substrate with the hydrogen-containing precursor and / or the plasma effluent of the nitrogen-containing precursor. The contacting may remove a portion of the layer of carbonaceous material. The method may include providing a fluorine-containing precursor to the processing region, forming a plasma effluent of the fluorine-containing precursor, and contacting the substrate with the plasma effluent of the fluorine-containing precursor.

This invention relates to a dual-coordinated cyclic hexanuclear tin oxide cluster compound, a photoresist composition, and its application in photolithography, belonging to the fields of photolithography materials and semiconductor manufacturing technology. The composition uses a cyclic hexanuclear tin oxide cluster as the active component, is compatible with common solvents and coating processes, and exhibits excellent thermal stability (significant mass loss only occurs above 260°C), meeting the requirements of coating, pre-baking, and exposure processes. This material demonstrates good film-forming properties, enabling the formation of uniform, low-defect thin films on silicon wafers, suitable for deep ultraviolet (DUV) lithography, electron beam (EB) lithography, and extreme ultraviolet (EUV) lithography. In these platforms, the photoresist composition can achieve high resolution, low line edge roughness (LER), and high-fidelity pattern transfer, exhibiting high etching resistance, meeting the performance and process requirements of advanced microelectronics manufacturing.

A modified self-aligned litho-etch-litho-etch (SALELE) process is provided that produces a structure such as, for example, a metal line containing structure, in which notching at a cut location of the structure is substantially reduced, and in which the line edge roughness (LER) and linearity of the structure is improved.

This invention relates to the field of semiconductor photolithography materials technology, and discloses a positive photoresist composition comprising the following components by weight: 100 parts of poly(p-hydroxystyrene) resin; 10 parts of phenolic resin; 3 parts of photoacid generator; 3 parts of organic base system; 600 parts of propylene glycol methyl ether acetate (PGMEA); and leveling agent KP341, added at 0.07% of the total mass of the composition. This positive photoresist composition and its preparation method, with the rigid framework of the quaternary copolymer resin combined with the phenolic resin, significantly improves the mechanical strength and plasma etching resistance of the photoresist film. 0.15μm fine line patterns show no collapse or deformation, and the film thickness loss rate after etching is reduced by more than 40%. It is suitable for long-term dry etching and ion implantation processes. The photoacid and dual organic base system precisely control the acid diffusion length, reducing the line edge roughness (LER) to below 3nm. The pattern cross-section is a perfect vertical rectangle, without defects such as undercut, tapering, or rounded corners, and the line width uniformity is improved by 30%.

A method of forming a pattern is disclosed. The method of forming a pattern can include forming or providing an etching target film on a substrate; coating a semiconductor photoresist composition including an organometallic compound and a solvent on the etching target film to form or provide a photoresist film; exposing the photoresist film with a patterned mask; dry developing the photoresist film with a gas to form a photoresist pattern; and etching the etching target film with the photoresist pattern as an etching mask. The present application can achieve excellent coating properties and line edge roughness.

This invention discloses an immersion ArF photoresist composition, comprising ArF photoresist resin, a photoacid generator, and an organic solvent. The ArF photoresist resin consists of resin component I and resin component II, with a mass ratio of resin component I to resin component II of (2-10):1. Resin component I is a methacrylate host resin containing acid-instable groups, and resin component II is a fluorinated methacrylate homopolymer. During pre-baking, the low surface energy resin component II migrates to the air-coating interface, forming a hydrophobic barrier layer to inhibit component dissolution and maintain a water contact angle ≥85°; the high surface energy resin component I is arranged towards the substrate interface, ensuring adhesion and photolithography performance. This invention eliminates the need for an additional top anti-reflective coating, simplifying the process, improving resolution and line edge roughness, and is suitable for semiconductor manufacturing below 90nm.

Line edge roughness (LER) produces a good resist pattern. [Solution] An acid generator containing a salt represented by formula (I) or a structural unit derived from a salt represented by formula (I). JPEG2026136095000188.jpg58170

The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to a top anti-reflection coating composition and a preparation method and application thereof. The top anti-reflection coating composition comprises polymer resin, a photoacid generator and an organic solvent I; the polymer resin has a structure as shown in a formula (1). The key point of the invention is to design and synthesize a polymer resin with a specific structure, and through the synergistic effect of all unit structures in the polymer resin structure and regulation and control of all the unit structures in a specific proportion range, the surface of the formed top anti-reflection coating has excellent super-hydrophobic performance; the water infiltration defect in immersion photoetching is effectively inhibited, the developing contrast ratio is improved, the line edge roughness is reduced, and meanwhile it is ensured that the top anti-reflection coating has the excellent anti-reflection performance. Formula (1)

An object is to provide an acid generator capable of producing a resist pattern having good line edge roughness and a resist composition containing the same. 【Solution means】An acid generator and a resist composition containing a salt represented by formula (I). TIFF2026064224000170.tif23109[where Q 1 、Q 2 、R 1 and R 2 each represent a hydrogen atom, a fluorine atom, a perfluoroalkyl group or an alkyl group. z represents an integer from 0 to 6. X 0 represents -O-, -CO- or the like or a group combining these. mm1 represents 0 or 1. L 1 represents a single bond or a substituted / unsubstituted hydrocarbon group, and -CH2- contained in the hydrocarbon group may be replaced by -O-, -S- or the like. Ar 1 and Ar 2 each represent a substituted or unsubstituted aromatic hydrocarbon group, and the substituents of Ar 1 and Ar 2 may combine to form a ring. X 1 represents a single bond, -O-, -S-, -CO-, -SO- or -SO2- or the like. Z + represents an organic cation. ]

There is a need for technology that can manufacture resist patterns with good line edge roughness (LER). [Solution] A resist composition containing a carboxylate salt represented by formula (I). JPEG2026093366000204.jpg19170

Disclosed are a semiconductor photoresist composition and a method of forming a pattern using the same, the semiconductor photoresist composition comprising: an organometallic compound; an alcohol compound including an unsaturated bond; and a solvent. The present application can provide a photoresist pattern having improved sensitivity and line edge roughness characteristics.

The application provides a fluorine-containing aromatic acid ligand modified zirconium metal oxide nanocluster photoresist material and a preparation method and application thereof. The preparation method of the fluorine-containing aromatic acid ligand modified zirconium metal oxide nanocluster photoresist material comprises the following steps: mixing a Zr6O4(OH)4(MAA) 12 solution and a fluorine-containing aromatic acid ligand compound solution, reacting, rotary evaporation and drying to obtain the fluorine-containing aromatic acid ligand modified zirconium metal oxide nanocluster photoresist material. The preparation method is simple, raw materials are cheap and easy to obtain, and the cost is low, and the method is suitable for industrial production. The fluorine-containing aromatic acid ligand modified zirconium metal oxide nanocluster photoresist material can be applied to ultraviolet lithography, electron beam lithography and extreme ultraviolet lithography, and the formed lithography pattern has the advantages of low line edge roughness and high resolution, and has a wide application prospect.

The use of a polytelluoxane in a non-chemically amplified photoresist. The polytelluoxane has a Te-O chain. By means of the high absorption of EUV by Te therein and a special Te-O main chain, the present invention aims at achieving excellent UV photoetching (I-line, KrF, ArF, etc.), electron beam photoetching and EUV photoetching performance, especially addressing the challenge of a EUV photoresist balancing high sensitivity, high resolution and low line edge roughness all at the same time.

To provide a resist composition capable of producing a resist pattern having good line edge roughness.SOLUTION: The resist composition contains a compound having a structure represented by formula (L0). Wherein Arlk represents a substituted or unsubstituted aromatic hydrocarbon ring; Xlk represents a single bond or a CO group; Rlk represents a H atom or an acid labile group; and lk and lo represent an integer of 1 or more. ] SELECTED DRAWING: None

This application provides a semiconductor structure and a method for modifying the same. The first semiconductor structure includes a substrate layer, a first film layer, and a second film layer stacked sequentially. A line structure in the second film layer has a first roughness. The first semiconductor structure is etched using a first etching process with an ion beam to obtain the second semiconductor structure. In the first etching process, the incident direction of the ion beam has a first angle with the sidewall of the line structure. The second semiconductor structure is then etched using a second etching process with an ion beam to obtain a third semiconductor structure. In the second etching process, the incident direction of the ion beam has a larger second angle with the sidewall of the line structure. In the third semiconductor structure, the line structure has a smaller third roughness. Through two plasma etching processes, fine adjustment of the linewidth roughness or line edge roughness can be achieved, and lattice damage to the sidewalls can be reduced, resulting in good repair of the sidewalls of the line structure.

The invention discloses m-mercaptobenzoic acid coordinated tin oxide cluster photoresist and application thereof, and belongs to the technical field of photoetching materials. The photoresist composition is prepared from an m-mercaptobenzoic acid coordinated tin oxygen cluster compound as an active component and ester, ketone, alcohol or alkane organic solvent, and auxiliary components such as a flatting agent, a photoinitiator or photoacid can be added as required. The cluster has excellent thermal stability, has obvious mass loss at the temperature of 260 DEG C or above, and can meet the technological conditions of spin coating, pre-drying, exposure and the like; and a flat, low-defect and uniform thin film can be formed on the silicon substrate. The method is suitable for deep ultraviolet (DUV) photoetching, electron beam (EB) photoetching and extreme ultraviolet (EUV) photoetching. In the platform, the photoresist composition shows comprehensive performance such as high resolution, low line edge roughness (LER) and high-fidelity pattern transfer, and shows excellent plasma etching resistance in a deep silicon etching process, the etching selection ratio of Si / photoresist can reach 36.2, and the photoresist composition has comprehensive performance and process compatibility for advanced node application.

To provide an acid generator and a resist composition capable of producing a resist pattern having good line edge roughness.SOLUTION: The acid generator contains a salt represented by formula (I). [wherein, m10 is an integer of 1 to 3, and m11 is an integer of 0 to 2; A1 / A2 is a bond or a hydrocarbyl group; Ar1 / Ar2 is an aromatic hydrocarbyl group or the like; R1 / R4 is a hydroxy group, - X1 - or the like, is - CO-O -, - O-CO - or the like, and is a substituted / unsubstituted hydrocarbyl group; is an acid-labile group; and and are each a halogen atom, a hydrocarbyl group, or a group formed by mutually bonding and and containing X +; R3 R10 R2 R2 X1 R3 R10 L11, -CH2 - in the ring may be replaced by -O -, - S -, - SO2 -, - SO -, - CO - or the like; m1 is an integer of 1 to 5, mm1 is an integer of 2 to 5, m2 is an integer of 0 to 4, m3 and m4 are integers of 0 to 5, and mm4 is an integer of 0 or 1; and the AI - represents an organic cation. ] SELECTED DRAWING: None

The disclosure relates to photolithography systems, methods and masks for semiconductor fabrication, focusing on overcoming diffraction-limited critical dimensions in optical lithography. Current extreme ultraviolet (EUV) systems typically achieve critical dimensions of -12-20 nm. However, finer critical dimension yields are constrained by stochastic effects including photon shot noise, unacceptable line-edge roughness, and unacceptable random bridging or break defects. These random failures, rather than systematic aberrations, dominate yield loss for the 12-20 nm features' technologies. Attempts to reduce defects by increasing source power or resist sensitivity worsen the resolution / roughness / sensitivity trade-off, further narrowing the process window. Therefore, new lithographic methods are provided, producing sub- 10 nm features with high fidelity, low probability of stochastic defectivity, and compatibility with both 300 mm and the underserved 200 mm fabrication infrastructures.