Material processing to achieve sub-10nm patterning

Abstract

Provided is a method for increasing pattern density on a substrate comprising a structure with a patterned layer with a first composition and a sidewall and a cap layer of a second composition formed atop said structure. The sidewall is exposed to a chemical environment and creates a chemically modified sidewall layer of a third composition. The cap layer and an interior, non-modified portion of said structure is removed using an etching process to leave behind said chemically modified sidewall layer. A pattern transfer etch of said sidewall chemically modified layer onto the underlying layer of said substrate is performed. One or more integration operating variables are controlled to achieve target critical dimensions comprising width, height, sidewall angle, line width roughness, and / or line edge roughness of said structure.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of Invention[0002]The invention relates to a method of performing a sequence of semiconductor patterning operations on a substrate and specifically to perform patterning of a structure on the substrate under 10 nm.[0003]2. Description of Related Art[0004]In semiconductor manufacturing patterning of a film on a substrate can be achieved through several methods that have evolved with time to follow Moore's law. The first method is conventional lithography which can no longer be used alone to achieve advanced nodes critical dimensions (CD).[0005]Double patterning is the technique used to create hard mask features smaller than photolithographic capabilities by using spacer deposition to define feature dimensions. Typical double patterning (DP) techniques require a sequence of deposition over a mandrel, etch to form the spacer and another etch to remove the mandrel, with both deposition and etch tools required. There are some spatial limitations ...

AI Technical Summary

Benefits of technology

This patent describes two methods for increasing pattern density on a substrate using an integration scheme. The first method involves depositing a layer of material on a substrate and then selectively removing a portion of the underlying substrate to create a structure with a patterned layer. The patterned layer is then chemically modified to increase its resistance to a certain type of etching process. The substrate is then patterned using the modified patterned layer as a mask. The second method involves creating a layer of material on a substrate and selectively removing a portion of the substrate to create a structure with a patterned layer. The patterned layer is then chemically modified to increase its resistance to a certain type of etching process. These methods can be controlled to achieve specific critical dimensions for the patterned structure. In simple terms, this patent provides two ways to make more precise and dense patterns on a substrate.

Problems solved by technology

There are some spatial limitations inherent in the conventional DP technique due to deposition ‘thin-ness’ limitations and pitch of the features from mandrel formation limitations.

These methods can become costly and add several steps to the process.

Advanced extreme ultra violet (EUV) lithography should be able to alleviate some of these issues once available but the constant drive to smaller CD will remain a challenge for the future technologies to come.

Images