32 results about "Immersion lithography" patented technology

The application discloses an immersion lithography pattern water immersion type defect improvement method, comprising the following steps: sequentially forming a target photoresist layer and a sacrificial photoresist layer on a substrate; performing immersion exposure processing on the target photoresist layer and the sacrificial photoresist layer; removing the sacrificial photoresist layer; and performing developing processing on the remaining target photoresist layer. The immersion lithography pattern water immersion type defect improvement method provided by the embodiment of the application forms a sacrificial photoresist layer on the surface of the target photoresist layer, and the immersion type defect is formed in the sacrificial photoresist layer, so that the immersion type defect is avoided to be formed in the target photoresist layer, the process yield is improved, and meanwhile, the reduction of the immersion water defect is favorable for improving the lithography and etching line width stability.

The application provides an advanced logic device oblique interconnection wiring structure and an immersion lithography method, which comprises at least two first straight line patterns and at least one oblique line pattern in the same metal layer; the two ends of the oblique line pattern are connected with the end portions of the two first straight line patterns respectively to form a broken line pattern. By optimizing the wiring topology structure and increasing the oblique line pattern, the high-yield advanced logic device interconnection wiring structure can be formed by relying on the mature and low-cost 193nm immersion lithography platform, and the problem of how to perform lithography on the advanced logic device oblique interconnection wiring structure at low cost and high yield is solved.

The present application relates to a kind of immersion photolithography machine, comprising: laser, emit laser beam;Multiple sets of lenses, be arranged between laser and immersion chamber, for focusing and collimating laser emitted by laser beam;Immersion chamber, be arranged between lens and mask, or be arranged between mask and wafer, fill high refractive index medium in it;Mask, be arranged below immersion chamber, laser beam is irradiated on mask after passing through immersion chamber and forms patterned beam;Control system is configured to adjust the flow speed and / or temperature of high refractive index medium;Wafer, be arranged below mask, patterned beam is irradiated on wafer after passing through mask, make photoresist on the surface of wafer chemical reaction or physical change, form corresponding pattern.The present application solves the technical problems that effective wavelength of photolithography light source is limited, focal depth is short, photolithography resolution and precision are low in existing photolithography process.

The application provides an advanced logic device oblique interconnection wiring structure and an immersion lithography method, which comprises at least two first straight line patterns and at least one oblique line pattern in the same metal layer; two ends of the oblique line pattern are connected with the end portions of the two first straight line patterns respectively to form a U-shaped pattern. By optimizing the wiring topology structure and increasing the oblique line pattern, the high-yield advanced logic device interconnection wiring structure can be formed by relying on the mature and low-cost 193nm immersion lithography platform, and the problem of how to perform lithography on the advanced logic device oblique interconnection wiring structure at low cost and high yield is solved.

Disclosed herein is a surface member for removable application to cover at least a portion of a surface of an immersion lithographic apparatus. The surface member has two principal orthogonal dimensions. The surface member comprises: a first layer comprising a contact surface configured to contact the surface of the immersion lithographic apparatus, the first layer comprising an adhesive configured to bond the surface member to the surface of the immersion lithographic apparatus via the contact surface; and a second layer on top of the first layer, the second layer including a first free edge and a second free edge. The surface member is configured such that, in use, the first free edge and the second free edge of the second layer and the contact surface of the first layer form a substantially flat surface so as to cover the at least a portion of a surface of an immersion lithographic apparatus.

A surface member for removable application to cover at least a portion of a surface of an immersion lithographic apparatus is disclosed herein. The surface member has two predominantly orthogonal dimensions and comprises: a first layer comprising an adhesive configured to adhere the surface member to the surface of the immersion lithographic apparatus; a second layer disposed on the first layer; a third layer disposed on the second layer; a fourth layer disposed on the third layer; and a fifth layer disposed on the fourth layer. The third layer includes an adhesive configured to adhere the second layer to the fourth layer. At least the second layer is patterned to tune a stiffness of the surface member in at least one of amplitude and directivity.

The application discloses a kind of detection device and detection method of pulling rigidity of immersed unit tube bundle.It includes simulation immersed unit, to be detected tube bundle group, six-dimensional detection platform, optical damping platform and controller;Optical damping platform is set and fixedly connected with simulation immersed unit through six-dimensional detection platform;Simulation immersed unit is polygonal structure, simulation immersed unit connects to be detected tube bundle group and detects pulling rigidity by detection device;Controller is connected and controls six-dimensional detection platform, and collects the displacement data and pulling force data of to be detected tube bundle group on six degrees of freedom.The application is used for the tube bundle of connecting immersed unit in immersion lithography machine to carry out pulling rigidity detection under simulating real working condition after completing plastic shaping processing and integration, carries out process quality control to the processing and integration of tube bundle, guarantees that immersed unit and its connecting tube bundle integrated to complete machine meet the specification requirements of pulling force, so as to guarantee the pose and motion control precision of immersed unit.

The application discloses an additive for 193nm wet photoresist, a preparation method and application thereof. The photoresist comprises the following raw materials: an additive shown as formula I, a resin shown as formula (L), a photoacid generator and a solvent, wherein the weight average molecular weight of the additive is 1000-3000; and the weight average molecular weight / number average molecular weight ratio of the additive is 1-5. The photoresist can improve the problem that the material is immersed in water during the immersion lithography exposure process, so that a photoresist film micro-pattern with excellent sensitivity and high resolution can be formed.

A method of monitoring performance of an immersion lithography apparatus, the method comprising: moving a test substrate relative to a liquid confinement structure through a series of test route portions while projecting exposure radiation through an immersion liquid onto a photosensitive layer on the test substrate such that the photosensitive layer is exposed; wherein the series of test route parts comprise a first test route part and a second test route part; and the second test route part and the first test route part are symmetrical.

The present invention provides a substrate processing device, a substrate processing method and a storage medium. The substrate processing device (1) includes: a holding portion for holding a substrate in a processing container, wherein the substrate has a pattern formed on the surface of a resist material for ArF immersion lithography; a rotation drive portion for rotating the holding portion; and a light source portion having a plurality of light sources, which irradiates the surface of the substrate held by the holding portion rotated by the rotation drive portion with light containing vacuum ultraviolet light, so that the irradiation amount of light irradiated from the light source portion to the inner side of the substrate is greater than the irradiation amount of light irradiated from the light source portion to the outer side of the substrate. The present invention can improve the surface roughness on a substrate using a resist material suitable for ArF immersion lithography.

This invention discloses an immersion lithography apparatus, specifically relating to the field of lithography equipment technology. It includes a placement frame, a positioning mechanism at the bottom of the placement frame, a support base fixedly mounted at the bottom of the positioning mechanism, a motor on one side of the positioning mechanism, a draining component in the middle of the placement frame and positioning mechanism, and a drying component on one side of the placement frame. This invention, by setting up a placement frame and positioning mechanism in conjunction with the draining component, clamps and positions the silicon wafer, thereby improving the stability of subsequent immersion lithography. It also allows for heat conduction cooling of the liquid medium within the placement frame, preventing bubbles from forming during lithography and affecting the quality of the immersion lithography. Furthermore, after lithography, the positioning is released, and the liquid medium within the placement frame is drained, facilitating subsequent drying and unloading of the silicon wafer.

The invention discloses a double-layer resin film as well as a preparation method and application thereof. The double-layer resin film comprises a resist layer and a top coating film layer coated on the resist layer. The double-layer resin film disclosed by the invention is applied to ArF immersion photoetching, so that the problems that the performance of the photoresist is reduced and the defects are increased can be reduced.

The invention discloses a polymer as well as a preparation method and application thereof. The polymers of the invention are prepared by the following method; the preparation method of the polymer comprises the following steps: in the presence of an initiator, carrying out polymerization reaction on a monomer as shown in a formula A and a monomer as shown in a formula B in an organic solvent to obtain the polymer, in parts by weight, the monomer A accounts for 1 to 15 parts; and the weight part of the monomer B is 1-10. The polymer disclosed by the invention is applied to ArF immersion photoetching, so that the problems that the performance of photoresist is reduced and the defects are increased can be reduced. # imgabs0 #

The present disclosure provides a high refractive index calixarene derivative photoresist and a preparation method and application thereof. The photoresist comprises a solvent and a main component, which is a calixarene derivative molecule containing a diazonaphthoquinone group and a sulfide structure. The photoresist of the present disclosure has the characteristics of high resolution, high refractive index and high corrosion resistance, and is suitable for use in immersion lithography technology.

The invention discloses a method for automatically replacing a CTC wafer of an infiltration type photoetching machine, which comprises the following steps: providing an FOUP loaded with a new CTC wafer, and carrying out unloading operation through an EAP. And the track machine carries out HMDS preprocessing operation on the new CTC wafer. The new CTC wafer is conveyed to the infiltration type photoetching machine from the track machine table, and the CTC wafer is automatically replaced through the first instruction so as to replace the old CTC wafer in the infiltration type photoetching machine with the new CTC wafer. And the track machine carries out conveying operation to convey the old CTC wafer back into the FOUP. And the delivery operation is completed by the EAP. The invention also discloses a system for automatically replacing the CTC wafer of the infiltration type photoetching machine. According to the invention, the automatic replacement of the CTC wafer can be realized, the time for replacing the CTC wafer is saved, the running time of the infiltration type photoetching machine is prolonged, and the production efficiency and the productivity are improved.

The invention provides a design layout processing method, a product and equipment. The method comprises the following steps: acquiring a design layout to be split; carrying out conflict analysis on the design layout to obtain a conflict mark layer, wherein the conflict mark layer is used for representing conflict areas which do not conform to a preset process rule and splitting attribution; the design layout and the conflict marking layer are input into a pre-trained splitting model, the design layout is split into a set number of sub-layouts through the splitting model, and the density of the sub-layouts is lower than that of the design layout. According to the method, an original high-density design layout can be split into a plurality of low-density sub-layouts, so that the low-density sub-layouts are adaptive to the production requirements of 14 nm and below advanced process nodes, the resolution limit of 193 nm immersion lithography is broken through, meanwhile, the dependence on a third-party splitting tool can be eliminated, and the problem that different tool platforms cannot be adaptive is solved.

A method for machining a wafer-holding device 10 for a wafer lithography process, such as e.g. immersion lithography or lithography under vacuum conditions, the wafer-holding device 10 comprising a carrier body 11 having an electrically conductive diamond cover layer 12. An electrochemical cell 20 is formed on the wafer-holding device 10 by the diamond cover layer 12, a counter electrode 21, an electrolyte liquid 22 in a gap between the diamond cover layer 12 and the counter electrode 21, and a voltage source 23 which is electrically connected to the diamond cover layer 12 and the counter electrode 21. Material is removed electrochemically on the wafer-holding device by means of the electrochemical cell 20. A surface machining device 200 is also described which is designed to machine a wafer-holding device 10 for a wafer lithography process.

To provide a top coat composition suitable for immersion lithography. A top coat composition comprising a graft polymer (A) and a solvent (B), the graft polymer (A) comprising a skeleton polymer (AB) moiety and a side chain polymer (AG) moiety; and the side chain polymer (AG) having a cLogP of 15 to 100, and the skeleton polymer (AB) having a cLogP of 1.10 to 3.00. The top coat composition is a high-performance material that can be used in the nanotechnology process of semiconductor device manufacturing, for example, in the manufacturing process of semiconductor devices that control liquid crystal, quantum dot, or OLED displays formed on a substrate.

The present invention provides an immersion lithography device with a collision test function and a collision test method, the immersion lithography device with a collision test function comprises: an immersion unit; a test unit, comprising a test piece, a test circuit and an electrical tester, the electrical tester being electrically connected to the immersion unit and the test piece respectively through the test circuit, the electrical tester being used to test the resistance and / or capacitance between the immersion unit and the test piece to determine whether a collision occurs between the immersion unit and the test piece during operation; and a carrying unit, being used to carry the test piece, the carrying unit being arranged below the immersion unit. The technical solution of the present invention can accurately determine whether a collision occurs between the immersion unit and the test piece during operation, so that the effectiveness of the anti-collision function can be evaluated, thereby ensuring the safe operation of the lithography machine.

This disclosure relates to lithography processing and lithography materials. Specifically, it provides a method for manufacturing a semiconductor device using immersion lithography. The metal photoresist layer includes a floating additive material to prevent the metal photoresist layer from being dissolved by the immersion solution of the immersion lithography apparatus during photochemical radiation exposure.

The present invention relates to a measuring head for an immersion objective, comprising a measuring surface that can be arranged in the image plane of the immersion objective during operation of the measuring head (6) and against which the immersion liquid (5) rests. The measuring surface has an annular film (8) surrounding its edge, which film comprises a hydrophobic material at least on its side facing away from the measuring head (6). Furthermore, the invention relates to a method for producing a measuring head (6) for an immersion objective and to an optical arrangement, in particular a projection exposure system for immersion lithography, comprising at least one corresponding measuring head (6).

[Problem] To provide a working fluid in which the efficiency of heat transport or heat exchange is further enhanced. Furthermore, generally contradictory functions such as reducing the power required for flow are solved at the same time. [Solution] The present invention is a heat transport or heat exchange system in which there is used one or more types of working fluids selected from: heat dissipation working fluids for semiconductors, automobiles, and computers; working fluids for immersion lithography; working fluids for temperature regulation; and working fluids for air conditioning machines, air conditioners, heat pump water heaters, refrigerators, and freezers. The working fluid properties and operation conditions are such that the heat transfer coefficient h of the working fluid has a value greater than kNu / d. In the aforementioned relationship, h is the heat transfer coefficient of the working fluid, k is the thermal conductivity, Nu is the Nusselt number, and d is the tube diameter.

A topcoat composition suitable for immersion lithography is provided. A topcoat composition comprising a grafted polymer (A) and a solvent (B), the grafted polymer (A) comprising a backbone polymer (AB) portion and a side chain polymer (AG) portion; and the cLogP of the side chain polymer (AG) is from 15 to 100, while the cLogP of the backbone polymer (AB) is from 1.10 to 3.00. The topcoat composition is a high performance material that can be used in nanotechnology processes for semiconductor device manufacturing, for example, in a method of manufacturing a semiconductor device for controlling a liquid crystal, quantum dot, or OLED display formed on a substrate.

A method of patterning an underlying layer, comprising depositing a metal-free polymer film over the underlying layer, exposing the film to EUV to form an exposed region and a mask region of the film, the exposed region being formed to be photoreactive to EUV, selectively dry etching a first portion of the film to form a feature including the remaining second portion of the film, the etching rate of the first portion being greater than the etching rate of the second portion of the film, the first portion being one of the exposed region and the mask region, the second portion being the other of the exposed region and the mask region that is not the first portion, the pitch of the feature being less than the feature size achievable with a 193 nm immersion lithography tool in a single patterning process, and using the second portion as an etching mask to pattern the underlying layer.

The present invention discloses an immersion head detection device and method for an immersion lithography machine, relating to the technical field of immersion head detection; comprising an outer box, a detection and maintenance mechanism is provided at one end of the inner part of the outer box, a detection execution mechanism is slidably provided inside the outer box, the detection execution mechanism comprises an operating table, on the two end faces of the operating table, one end face is provided with an ultrasonic cleaning mechanism, the other end face is provided with a sample tray, a flow field detection camera is provided inside the operating table, and a shooting hole is arranged on the sample tray, and the lens of the flow field detection camera is provided in the shooting hole on the sample tray; the detection part is used for performing maintenance and detection on the sample tray; the present invention can facilitate the detection of bubbles in the medium flow field, the detection process does not require excessive human participation, simulates the operation form during wafer lithography, realizes efficient detection, has rich functions, and can facilitate maintenance.

The invention discloses a photoresist top coating film as well as a preparation method and application thereof. The top coating liquid comprises the following components in percentage by mass: 1-5% of a polymer and 95-99% of an organic solvent, the polymer is prepared by the following method. The preparation method of the polymer comprises the following steps: in the presence of an initiator, carrying out polymerization reaction on a monomer as shown in a formula A and a monomer as shown in a formula B in an organic solvent to obtain the polymer, in parts by weight, the monomer A accounts for 1 to 15 parts; the weight part of the monomer B is 1-10; the top coating film is applied to ArF immersion photoetching, and the problems that the performance of photoresist is reduced and defects are increased can be solved. # imgabs0 #

The present disclosure relates to methods for a lithographic apparatus comprising a fluid handling structure configured to confine a fluid to a region of a surface of a substrate. The methods are for determining a parameter associated with the fluid handling structure and / or the wettability of the substrate. Some methods comprise causing a movement of the fluid handling structure relative to the substrate, wherein a speed of the fluid handling structure relative to the substrate during the movement varies as a function of the position of the fluid handling structure relative to the substrate; and then inspecting the surface of the substrate. Some methods comprise causing a movement of the fluid handling structure relative to the substrate, wherein the fluid handling structure passes over a fluid-pinning feature during the movement of the fluid handling structure relative to the substrate; and then inspecting the surface of the substrate.

Disclosed are compositions and methods for photolithography that employ branched compositions, such as graft or bottlebrush polymers. In one embodiment, a photoresist composition includes a graft polymer that, due to lower surface energy and reduced chain entanglement, migrates to the upper region of the resist layer during application to form an in-situ barrier that minimizes the leaching of photoresist components into an immersion lithography fluid, thereby reducing contamination of the exposure tool without requiring a separate topcoat. The graft polymers can also be formulated into top coats, top anti-reflective coatings, or used as surfactants in rinse solutions to prevent pattern collapse. These compositions can be formulated to be free of per- and polyfluoroalkyl substances (PFAS), offering an environmentally safer alternative for advanced lithographic processes.

A substrate holder configured to support a substrate for exposure in an immersion lithography apparatus, the substrate having a first contact angle with respect to an immersion liquid, the substrate holder comprising: a surrounding structure surrounding the substrate and coplanar with the substrate when supported by the substrate holder, the surrounding structure comprises a surface structure and an electrode structure below the surface structure, the surface structure has a second contact angle relative to the immersion liquid, and the first contact angle is different from the second contact angle; the electrode structure is configured to vary a contact angle of a portion of the surface structure to mitigate a transition from the first contact angle to the second contact angle and to mitigate a transition from the second contact angle to the first contact angle, the surface structure is configured to stabilize a meniscus of the immersion liquid moving along the surface structure towards the substrate and to stabilize a meniscus of the immersion liquid moving along the surface structure away from the substrate.

The invention relates to a method for reducing exposure defects of an immersed photoetching machine, which comprises the following steps: preparing graphene oxide by a Harma method, and preparing a cation-controlled graphene oxide film by cation-pi interaction; and assembling the graphene oxide film in a liquid channel of an immersion system of an immersion lithography machine, so that immersion liquid flows through the graphene oxide film to be purified and then flows to the surface of a wafer. According to the invention, pollutants such as particles, metal ions, organic compounds, small molecular substances and the like can be filtered at one time by utilizing the excellent separation performance of the ion-controlled graphene oxide film, so that the exposure process parameters of the immersion lithography machine are stable, the refractive index of the immersion liquid in an ideal state is achieved, the exposure defect caused by the pollution is eliminated, and the product quality is improved. The requirement of advanced process nodes for process parameter stability is ensured, and meanwhile, the equipment cost and the time cost of pollution separation can be reduced.