5results about How to "Reduce edge roughness" patented technology

The invention belongs to the technical field of photoresist materials, and particularly relates to an etching-resistant ArF photoresist and a preparation method thereof. The etching-resistant ArF photoresist is prepared from the following raw materials in parts by weight: 90 to 100 parts of film-forming resin, 5 to 15 parts of a photoacid generator, 0.5 to 2 parts of organic alkali, 3 to 10 parts of an etching-resistant additive and 3000 to 5000 parts of a photoresist solvent, and the etching-resistant additive is a cholic acid derivative; the film-forming resin comprises metacrylic acid ester with a side chain containing lactone, metacrylic acid ester with a side chain containing an aliphatic ring protecting group and metacrylic acid ester with a side chain containing a polar group; according to the etching-resistant ArF photoresist disclosed by the invention, the photoresist with a relatively high-resolution pattern can be formed; the photoresist has high resolution and etching resistance, and the application range of the photoresist can be widened.

This disclosure provides a lithium-ion battery and its preparation method. Specifically, the lithium-ion battery includes a positive electrode sheet, which comprises a positive electrode film and a current collector; wherein the positive electrode film comprises a positive electrode active material, a solid electrolyte, a conductive agent, and a binder; wherein the binder exists in the positive electrode film in the form of nanofibers; the nanofibers include a first fiber and a second fiber; the diameter of the first fiber is less than 100 nm, and the average diameter of the first fiber is 3 nm to 25 nm; the diameter of the second fiber is greater than or equal to 100 nm, and the average diameter of the second fiber is 200 nm to 500 nm. By simultaneously applying the first fiber and the second fiber formed by the binder in the positive electrode film or the solid electrolyte layer, it is possible to improve adhesion and tensile strength while providing point-to-point adhesion between particles, reducing edge roughness, and thus improving the capacity and rate performance of the lithium-ion battery.

A method for forming a semiconductor structure, comprising: etching the sidewall of the initial first mask layer, reducing the size of the initial first mask layer along the extension direction of the initial fin structure, and forming a first mask layer; forming an initial isolation layer covering the first mask layer, wherein the initial isolation layer exposes the top surface of the first mask layer; after forming the initial isolation layer, removing the first mask layer; after removing the first mask layer, etching the initial fin structure using the initial isolation layer as a mask. By controlling the process parameters for etching the initial first mask layer, the width of the formed first mask layer can be made small enough, the accuracy is high, and the process difficulty is effectively reduced, thereby making the size of the formed opening small enough, which is conducive to improving the performance of the formed semiconductor structure.

The invention provides an edge polishing detection method and device and a medium. The detection method comprises the following steps: uniformly forming concave holes in the edge part of a test wafer subjected to an edge grinding process through a laser beam; the subsurface damage depth generated in the edge grinding procedure is detected according to the shape of the inner wall of each concave hole; and determining the polishing removal amount of the edge polishing process according to the subsurface damage depth.

The invention relates to the technical field of semiconductors, and relates to an anti-reflection film layer structure and a forming method thereof, and the anti-reflection film layer structure comprises a first hard mask layer and a second hard mask layer which are distributed in a stacked manner. Wherein the refractive indexes and / or extinction coefficients of the first hard mask layer and the second hard mask layer are different; and the thickness ratio of the first hard mask layer to the second hard mask layer is 1: 10-10: 1. The forming method can improve the uniformity of the contour of the developing region.