Bio-based film-forming resin and photoresist prepared by same

A film-forming resin and bio-based technology, applied in the field of functional polymer materials, can solve the problems of affecting the edge roughness of the resin and reducing the free volume of the polymer chain, so as to achieve good product application performance, improve solubility, polymer molecular weight and The effect of strong distribution controllability
CN108084331AActive Publication Date: 2018-05-29JIANGNAN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
JIANGNAN UNIV
Publication Date
2018-05-29

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Abstract

The invention discloses bio-based film-forming resin and photoresist prepared by the same. The bio-based film-forming resin is prepared by styrene derivatives and cholic acid derivatives through freeradical polymerization reaction and alcoholysis reaction. The bio-based film-forming resin is mixed with a photo-acid generator, auxiliaries, a solvent and the like to prepare the 365nm and 248nm photoresist. The bio-based film-forming resin has the advantages that polymerizable monomers containing natural product cholic acid are introduced into conventional poly(p-hydroxystyrene) film-forming resin to form the new improved film-forming resin, the new film-forming resin can increase the ultraviolet transparency of the photoresist and increase the photosensitivity of the photoresist, and the large cyclic structure of the film-forming resin can increase carbon compactness, reduce the free volume of polymerization chains, increase heat resistance and increase the etching resistance of the film-forming resin; large lateral chains can improve the problem of acid diffusion, increase dissolution difference and lower image edge roughness.
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Description

technical field

[0001] The invention relates to the technical field of functional polymer materials, in particular to a bio-based film-forming resin prepared by using cholic acid derivatives and styrene derivatives as polymerized monomers, and its application in the field of 365nm or 248nm photoresist . Background technique

[0002] Photoresists are widely used in microelectronics manufacturing fields such as discrete devices, LEDs, integrated circuits, and TFT-LCDs. They affect major fields such as information engineering, energy and environmental protection, and national defense, and play a very important role in the development of high-tech industries and the national economy. effect. The photoresist is mainly composed of resin, photoacid generator, auxiliary agent and solvent. Through exposure, development, etching, film removal and other processes, the pattern on the mask plate is transferred to the substrate such as silicon wafer. According to the development mechani...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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