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48results about How to "Minimal edge roughness" patented technology
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Positive resist composition and patterning process
ActiveUS20120220112A1Improve adhesionExpand coveragePhotosensitive materialsSemiconductor/solid-state device manufacturingResistImage resolution
A positive resist composition based on a polymer comprising recurring units of (meth)acrylate having a cyclic acid labile group and a dihydroxynaphthalene novolak resin, and containing a photoacid generator is improved in resolution, step coverage and adhesion on a highly reflective stepped substrate, has high resolution, and forms a pattern of good profile and minimal edge roughness through exposure and development.
Owner:SHIN ETSU CHEM IND CO LTD
Monomer, polymer, positive resist composition and patterning process
ActiveUS20130288180A1Increase contrastMinimized swell in alkaline developer sufficientOrganic chemistryPhotosensitive materialsResistMonomer
A polymer for use in resist compositions is obtained from a monomer having formula (1) wherein R1 is methyl, ethyl, propyl, vinyl or ethynyl, the circle designates C3-C12 cycloalkyl, a combination wherein R1 is ethyl and the circle is cyclohexyl being excluded, R2 is H or C1-C4 alkyl, and m is 1 to 4.
Owner:SHIN ETSU CHEM IND CO LTD
Positive resist composition, monomer, polymer, and patterning process
ActiveUS20140162188A1Satisfactory effect of suppressing acid diffusionHigh resolutionOrganic chemistryPhotosensitive materialsPropanolPolymer science
A positive resist composition is provided comprising a polymer comprising recurring styrene units having an ester group bonded to a CF3—C(OH)—R3 group (R3═H, CH3, or CF3) such as 1,1,1,3,3,3-hexafluoro-2-propanol and having a Mw of 1,000-500,000. The resist composition has a satisfactory effect of suppressing acid diffusion and a high resolution, and forms a pattern of good profile and minimal edge roughness after exposure.
Owner:SHIN ETSU CHEM IND CO LTD
Positive resist composition and patterning process
ActiveUS20120135349A1Satisfactory effect of suppressing acid diffusionHigh resolutionElectric discharge tubesPhotosensitive materialsMethacrylatePolymer science
A polymer obtained from copolymerization of a recurring unit having a carboxyl group and / or phenolic hydroxyl group substituted with an acid labile group with a methacrylate having a phenolic hydroxyl-bearing pyridine is useful as a base resin in a positive resist composition. The resist composition comprising the polymer is improved in contrast of alkali dissolution rate before and after exposure, acid diffusion control, resolution, and profile and edge roughness of a pattern after exposure.
Owner:SHIN ETSU CHEM IND CO LTD
Positive resist composition and patterning process
ActiveUS20110171580A1Increase contrastGood pattern profilePhotosensitive materialsSemiconductor/solid-state device manufacturingResistImage resolution
A positive resist composition comprising a polymer having a tetrahydrobenzocycloheptane-substituted secondary or tertiary carboxyl group ester as an acid labile group exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal edge roughness after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance.
Owner:SHIN ETSU CHEM IND CO LTD
Method to form reduced dimension pattern with good edge roughness
InactiveUS20040214109A1Minimal edge roughnessImprove edge roughnessElectric discharge tubesElectrographic processes using photoelectrophoresisEngineeringHeat treating
As feature sizes approach 0.1 .mu.m or smaller, reduction of line edge roughness (LER) becomes increasingly important. Significant reductions in edge roughness have been achieved by applying a second Ebeam exposure after the initial one thatis used to define the pattern. After this second blanket exposure a longer heat treatment and a stronger development process than before are used. In addition to reducing edge roughness the disclosed treatment allows the CD to be reduced under tight control since the amount of CD reduction is proportional to the second Ebeam dosage.
Owner:HEADWAY TECH INC
Positive resist composition and patterning process
ActiveUS9335632B2Satisfactory effect of suppressing acid diffusionHigh resolutionSemiconductor/solid-state device manufacturingPhotomechanical exposure apparatusPolymer scienceTERT-BUTYL METHACRYLATE
A positive resist composition is provided comprising a polymer comprising recurring units having a carboxyl and / or phenolic hydroxyl group substituted with an acid labile group and recurring units of tert-butyl or tert-amyl-substituted hydroxyphenyl methacrylate and having a weight average molecular weight of 1,000-500,000. The resist composition has a satisfactory effect of suppressing acid diffusion and a high resolution, and forms a pattern of good profile and minimal edge roughness after exposure.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and pattern forming process
ActiveUS20170031243A1High resolutionMinimal edge roughnessPhotomechanical coating apparatusPhotomechanical exposure apparatusResistOxazolidinedione
A resist composition is provided comprising a polymer comprising recurring units (a) having an oxazolidinedione, thioxooxazolidinone, thiazolidinedione or thioxothiazolidinone structure and recurring unit (b1) having an acid labile group-substituted carboxyl group and / or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group. The resist composition suppresses acid diffusion, exhibits a high resolution, and forms a pattern of satisfactory profile with low edge roughness.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS10303056B2High sensitivitySatisfied with the effectOrganic chemistryPhotomechanical coating apparatusResistPolymer chemistry
Owner:SHIN ETSU CHEM IND CO LTD
Positive resist composition and patterning process
ActiveUS8450042B2Increase contrastHigh resolutionPhotosensitive materialsSemiconductor/solid-state device manufacturingHydrogenImage resolution
A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group of fluorene structure exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal LER after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS9164383B2High resolutionMinimal edge roughnessElectric discharge tubesChromate compound compositionsResistIndium
A resist composition comprising a salt of a mono- to tetrafunctional carboxylic acid with a metal selected from magnesium, chromium, manganese, iron, cobalt, nickel, copper, zinc, silver, cadmium, indium, tin, antimony, cesium, zirconium, and hafnium, and a solvent is improved in film uniformity when coated, and exhibits a high resolution, high sensitivity, and minimal LER when processed by the EB or EUV lithography.
Owner:SHIN ETSU CHEM CO LTD
Method to form reduced dimension pattern with good edge roughness
InactiveUS6905811B2Minimal edge roughnessIncrease roughnessElectric discharge tubesPhotomechanical exposure apparatusEngineeringHeat treating
As feature sizes approach 0.1 μm or smaller, reduction of line edge roughness (LER) becomes increasingly important. Significant reductions in edge roughness have been achieved by applying a second Ebeam exposure after the initial one that is used to define the pattern. After this second blanket exposure a longer heat treatment and a stronger development process than before are used. In addition to reducing edge roughness the disclosed treatment allows the CD to be reduced under tight control since the amount of CD reduction is proportional to the second Ebeam dosage.
Owner:HEADWAY TECH INC
Positive resist composition and patterning process
ActiveUS20150064626A1Satisfactory effect of suppressing acid diffusionHigh resolutionPhotosensitive materialsElectric discharge tubesMethacrylateTert butyl
A positive resist composition is provided comprising a polymer comprising recurring units having a carboxyl and / or phenolic hydroxyl group substituted with an acid labile group and recurring units of tert-butyl or tert-amyl-substituted hydroxyphenyl methacrylate and having a weight average molecular weight of 1,000-500,000. The resist composition has a satisfactory effect of suppressing acid diffusion and a high resolution, and forms a pattern of good profile and minimal edge roughness after exposure.
Owner:SHIN ETSU CHEM IND CO LTD
Polymer, chemically amplified positive resist composition and patterning process
ActiveUS20160370702A1Increase contrastGood pattern profilePhotomechanical coating apparatusPhotomechanical exposure apparatusResistImage resolution
A positive resist composition comprising a polymer comprising recurring units having both an acyl or alkoxycarbonyl group and an acid labile group-substituted hydroxyl group exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal edge roughness.
Owner:SHIN ETSU CHEM IND CO LTD
Positive resist composition and pattern forming process
ActiveUS10012902B2High resolutionMinimal edge roughnessOrganic chemistrySemiconductor/solid-state device manufacturingOrganic solventSulfonium
A non-chemically-amplified positive resist composition comprising a polymer comprising both recurring units derived from a sulfonium salt capable of generating a fluorinated acid and recurring units containing an amino group as a base resin exhibits a high resolution and a low edge roughness and forms a pattern of good profile after exposure and organic solvent development.
Owner:SHIN ETSU CHEM IND CO LTD
Positive resist composition and patterning process
ActiveUS8211618B2Increase contrastHigh resolutionPhotosensitive materialsRadiation applicationsPhotochemistryAcid labile
A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group of acenaphthene structure exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal LER after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance.
Owner:SHIN ETSU CHEM IND CO LTD
Positive resist composition and patterning process
ActiveUS8501384B2Increase contrastHigh resolutionPhotosensitive materialsSemiconductor/solid-state device manufacturingResistImage resolution
A positive resist composition comprising a polymer having a tetrahydrobenzocycloheptane-substituted secondary or tertiary carboxyl group ester as an acid labile group exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal edge roughness after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance.
Owner:SHIN ETSU CHEM IND CO LTD
Positive resist composition and patterning process
ActiveUS9244350B2Satisfactory effect of suppressing acid diffusionHigh resolutionPhotomechanical exposure apparatusPhotosensitive material processingHydroxyanthraquinoneHydroxy group
A positive resist composition is provided comprising a polymer comprising recurring units having a carboxyl or phenolic hydroxyl group substituted with an acid labile group and recurring units of hydroxyanthraquinone or hydroxy-2,3-dihydro-1,4-anthracenedione methacrylate, and having a Mw of 1,000-500,000. The resist composition has a satisfactory effect of suppressing acid diffusion and a high resolution, and forms a pattern of good profile and minimal edge roughness after exposure.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20130323646A1Satisfactory effect of suppressing acid diffusionHigh resolutionPhotosensitive materialsElectric discharge tubesResistAcyl group
A polymer is obtained from copolymerization of a unit having a carboxyl and / or phenolic hydroxyl group substituted with an acid labile group with a hydroxyphenyl methacrylate unit having one acyl, acyloxy or alkoxycarbonyl group. The polymer is useful as a base resin in a positive resist composition. The resist composition comprising the polymer is improved in contrast of alkali dissolution rate before and after exposure, acid diffusion control, resolution, and profile and edge roughness of a pattern after exposure.
Owner:SHIN ETSU CHEM IND CO LTD
Positive resist composition and patterning process
ActiveUS20150017586A1Satisfactory effect of suppressing acid diffusionHigh resolutionElectric discharge tubesPhotosensitive materialsHydroxyanthraquinoneHydroxy group
A positive resist composition is provided comprising a polymer comprising recurring units having a carboxyl or phenolic hydroxyl group substituted with an acid labile group and recurring units of hydroxyanthraquinone or hydroxy-2,3-dihydro-1,4-anthracenedione methacrylate, and having a Mw of 1,000-500,000. The resist composition has a satisfactory effect of suppressing acid diffusion and a high resolution, and forms a pattern of good profile and minimal edge roughness after exposure.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS9274425B2High resolutionMinimal edge roughnessSemiconductor/solid-state device manufacturingPhotomechanical exposure apparatusResistAlcohol
Owner:SHIN ETSU CHEM IND CO LTD
Developer and patterning process
ActiveUS9164392B2Minimal edge roughnessInhibits the formation of defectsPhotosensitive material processingResistAqueous solution
An aqueous solution containing 0.1-20 wt % of a benzyltrialkylammonium hydroxide is a useful developer for photosensitive resist materials. When an exposed resist film is developed in the developer, any swell of the resist film during development is suppressed. A resist pattern with minimal edge roughness can be formed while preventing pattern collapse or bridge defect formation.
Owner:SHIN ETSU CHEM CO LTD
Developer for photosensitive resist material and patterning process
ActiveUS9052602B2Minimal edge roughnessInhibits the formation of defectsSemiconductor/solid-state device manufacturingPhotomechanical exposure apparatusOrganic chemistryMaterials science
An aqueous solution containing 0.1-20 wt % of a cyclic ammonium hydroxide is a useful developer for photosensitive resist materials. A resist pattern is formed by applying a chemically amplified positive resist composition onto a substrate to form a resist film, exposing the resist film to high-energy radiation, and developing the exposed resist film in a cyclic ammonium hydroxide-containing aqueous solution.
Owner:SHIN ETSU CHEM CO LTD
Positive resist composition and patterning process
ActiveUS8574817B2Increase contrastHigh resolutionPhotosensitive materialsSemiconductor/solid-state device manufacturingPolymer scienceDissolution
A positive resist composition comprising a polymer having carboxyl groups substituted with an acid labile group having formula (1), (2) or (3) exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a reduced acid diffusion rate, and forms a pattern with good profile, minimal edge roughness, and etch resistance. In formula (1), R1, R2, R5, R6, R8, and R9 are alkyl, aryl, or alkenyl, R3, R4, R7, R10, and R11 are hydrogen, alkyl, alkoxy, acyloxy, halogen, cyano, nitro, hydroxyl or trifluoromethyl, M is methylene or ethylene, R is a single bond or linking group.
Owner:SHIN ETSU CHEM IND CO LTD
Positive resist composition and patterning process
ActiveUS8841061B2Increase contrastHigh resolutionPhotosensitive materialsRadiation applicationsArylMethylene radical
A positive resist composition comprising a polymer having carboxyl groups substituted with an acid labile group having formula (1) exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a reduced acid diffusion rate, and forms a pattern with good profile, minimal edge roughness, and etch resistance. In formula (1), R1 is methylene or ethylene, R2 is alkyl, aryl, or alkenyl, which may contain oxygen or sulfur, R3 is fluorine or trifluoromethyl, and m is an integer of 1 to 4.
Owner:SHIN ETSU CHEM IND CO LTD
Positive resist composition and patterning process
ActiveUS8778592B2Improve adhesionExpand coveragePhotosensitive materialsSemiconductor/solid-state device manufacturingResistMeth-
A positive resist composition based on a polymer comprising recurring units of (meth)acrylate having a cyclic acid labile group and a dihydroxynaphthalene novolak resin, and containing a photoacid generator is improved in resolution, step coverage and adhesion on a highly reflective stepped substrate, has high resolution, and forms a pattern of good profile and minimal edge roughness through exposure and development.
Owner:SHIN ETSU CHEM IND CO LTD
Positive resist composition and patterning process
ActiveUS9335633B2Satisfactory effect of suppressing acid diffusionHigh resolutionPhotomechanical exposure apparatusPhotosensitive material processingAcid labile4-Pyrone
A positive resist composition is provided comprising a polymer comprising recurring units having a carboxyl or phenolic hydroxyl group substituted with an acid labile group and recurring units of 4-pyrone ester, and having a Mw of 1,000-500,000. The resist composition has a satisfactory effect of suppressing acid diffusion and a high resolution, and forms a pattern of good profile and minimal edge roughness after exposure.
Owner:SHIN ETSU CHEM IND CO LTD
Positive resist composition and patterning process
ActiveUS10007178B2Satisfactory effect of suppressing acid diffusionHigh resolutionPhotosensitive material processingPhotosensitive materials for photomechanical apparatusOniumAcid labile
A positive resist composition is provided comprising a polymer having an acid labile group and an acid generator bound to its backbone, in admixture with an onium salt having a specific cation structure capable of generating sulfonic acid having a molecular weight of at least 540. The composition is effective for suppressing acid diffusion, has high resolution, and forms a pattern of satisfactory profile and minimal edge roughness after exposure and development.
Owner:SHIN ETSU CHEM IND CO LTD
Polymer, positive resist composition and patterning process
ActiveUS9250517B2Satisfactory effect of suppressing acid diffusionHigh resolutionPhotosensitive materialsPhotomechanical exposure apparatusResistMeth-
A polymer comprising recurring units of butyrolactone (meth)acrylate, recurring units having a carboxyl or phenolic group which is substituted with an acid labile group, and recurring units having a phenol group or an adhesive group in the form of 2,2,2-trifluoro-1-hydroxyethyl is quite effective as a base resin for resist. A positive resist composition comprising the polymer is improved in such properties as a contrast of alkali dissolution rate before and after exposure, acid diffusion suppressing effect, resolution, and profile and edge roughness of a pattern after exposure.
Owner:SHIN ETSU CHEM CO LTD
Positive resist composition and patterning process
ActiveUS8735046B2Satisfactory effect of suppressing acid diffusionHigh resolutionElectric discharge tubesPhotosensitive materialsResistMethacrylate
A polymer obtained from copolymerization of a recurring unit having a carboxyl group and / or phenolic hydroxyl group substituted with an acid labile group with a methacrylate having a phenolic hydroxyl-bearing pyridine is useful as a base resin in a positive resist composition. The resist composition comprising the polymer is improved in contrast of alkali dissolution rate before and after exposure, acid diffusion control, resolution, and profile and edge roughness of a pattern after exposure.
Owner:SHIN ETSU CHEM IND CO LTD
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