39 results about "Fluorosilicate glass" patented technology

A method of forming a wiring level and an electrical isolation associated with the wiring level on a surface of a semiconductor wafer comprises the steps of providing the semiconductor wafer having said surface, forming a plurality of electrically conductive wiring lines upon said surface, each of the wiring lines having a spacing with respect to neighboring one of the wiring lines, depositing a first layer of amorphous carbon upon the wiring lines by means of non-conformal plasma enhanced chemical vapor deposition (PECVD), such that air-filled voids formed below the first layer within the spacings between neighboring wiring lines. Alternatively, OSG (organo-silicon glass) or FSG (fluorine doped silicon glass) may be deposited to yield air-filled voids within the spacings. According to an embodiment, the carbon, OSG or FSG layers are used as an IMD-layer (line-to-line isolation), added by a further layer of a dielectric material, which then serves as an ILD-layer (level-to-level isolation).

The invention provides a method for forming metal silicide. Before a metal silicide block layer is formed, a layer of silicofluoride glass film is deposited on a silicon substrate to be as a buffer layer. Fluorine element in the silicofluoride glass film can spread into the silicon substrate. Introduction of the fluorine element can restrain the metal from suddenly entering the silicon substrate together in an initial stage when the metal silicide is formed, and can fix the metal element which has already spread into the silicon substrate, thereby reducing defects.

A line trough and a via cavity are formed within a dielectric layer comprising a fluorosilicate glass (FSG) layer. A fluorine depleted adhesion layer is formed within the line trough and the via cavity either by a plasma treatment that removes fluorine from exposed surfaces of the FSG layer, or by deposition of a substantially fluorine-free dielectric layer. Metal is deposited within the line trough and the via cavity to form a metal line and a metal via. The fluorine depleted adhesion layer provides enhanced adhesion to the metal line compared with prior art structures in which a metal line directly contacts a FSG layer. The enhanced adhesion of metal with an underlying dielectric layer provides higher resistance to delamination for a semiconductor package employing lead-free C4 balls on a metal interconnect structure.

The present invention relates to a self hardening glass carbomer composition obtainable by treating a fluorosilicate glass powder with: (a) a poly(dialkylsiloxane) having terminal hydroxyl groups, wherein the alkyl groups contain 1 to 4 carbon atoms, (b) an aqueous acid solution, and (c) separating the treated fluorosilicate glass powder from the aqueous acid solution. The glass carbomer compositions according to the invention have for example good toughness and strength and excellent fluoride release, In addition, the glass carbomer compositions according to the invention do not show shrinkage or expansion, an essential property for providing fillings for cavities having high strength and long durability. Moreover, the glass carbomer composition according to the present invention has a lower sensitivity towards abrasion and wear, a greater stiffness, a smoother surface, a better colourfastness, a better adherence to e.g. bone tissue and a lower water sensitivity.

Provided is an intermetallic dielectric layer structure of a silicon-on-insulator device, comprising a silicon-rich oxide layer (54) covering a metal interconnect, a fluorine-silicon glass layer on the silicon-rich oxide layer, and a non-doped silicate glass layer on the fluorine-silicon glass layer; the thickness of the silicon-rich oxide layer (54) is 700 angstroms .+-.10%; the silicon-rich oxide layer having a greater thickness captures movable ions on an unsaturated bond, such that it is difficult for the movable ions to pass through the silicon-rich oxide layer, thus blocking the movable ions. The present invention has good performance in an integrity evaluation of the gate oxide layer, and avoids damage to the device caused by the aggregation of movable ions at an interface. Also provided are a silicon-on-insulator device and a method of manufacturing the intermetallic dielectric layer of the silicon-on-insulator device.

The invention discloses a manufacturing method for a semiconductor device. The method comprises the steps of providing a semiconductor substrate provided with a CMOS device therein, forming a fluorine silica glass layer on the upper surface of the semiconductor substrate; forming a silicon-rich material layer on the fluorine silica glass layer; and forming an MEMS device on the silicon-rich material layer. By forming the silicon-rich material layer after the manufacture of the CMOS device and before the manufacture of the MEMS device, problems that structural holes and rough surfaces which are resulted from bubbles formed by fluorine aggregation in a heat treatment process with a process temperature higher than 400 DEG C and relatively long heat-preservation time can be solved; and thus influences on subsequent processes and performances of the device can be prevented effectively.

This invention relates to a method to remove metal conductive layer static complete etching, which comprises the following steps: a, depositing a metal conductive layer on the on nitrogen layer; b, depositing a fluorin and silicon glass on the nitrogen layer with several round holes and grooves opened; c, using the electric plasm with high gas pressure and low density generated free electrons impacting the metal conductive layer; d, etching the nitrogen layer on the round holes and groove bottom by several etching ions.

The invention discloses a high-numerical-aperture all-solid-state fluorotellurite glass optical fiber, as well as a preparation method and application thereof, and belongs to the technical field of special glass optical fibers. The high-numerical-aperture all-solid-state fluorotellurite glass optical fiber comprises a fiber core and a cladding layer, wherein the fiber core is made of tellurium yttrium barium (TBY), the diameter of the fiber core is 0.5 to 100 microns, and the fiber core comprises TeO2, BaF2 and Y2O3; and the cladding layer is made of aluminum magnesium calcium strontium barium yttrium tellurium (AMCSBYT), the thickenss is 1 to 200 microns, and the cladding layer comprises AlF3, MgF2, CaF2, SrF2, BaF2, YF3 and TeO3. The matrix glass is molten in a glove box protected by nitrogen, so that the low hydroxyl content of the prepared glass sample is guaranteed, and the optical fiber is prepared with a rod tube method. The prepared optical fiber has relatively high numerical aperture and relatively low limited loss. The chromatic dispersion and the non-linearity of the optical fiber can be regulated and controlled on a large scale by changing the core diameter size of the optical fiber. The optical fiber serves as a non-linear medium, and an intermediate infrared super-continuous light source with spectral bandwidth coverage being 0.35 to 5.5 microns and output average power being tens of watts can be obtained.

A method for suppressing crystal defects of fluorosilicate glass, comprising the following steps: Step 1, depositing a layer of fluorosilicate glass on the surface of a wafer; Step 2, performing plasma treatment on the upper surface of the fluorosilicate glass to form a layer of low-fluorine oxide layer; Step 3, rinsing the wafer with deionized water; Step 1 and Step 2 are carried out in the same chemical vapor deposition reaction chamber. The beneficial effects of the present invention are: after the deposition of the fluorosilicate glass, plasma treatment is carried out in the same cavity to reduce the fluorine on the upper surface of the fluorosilicate glass, suppress its hydrophilicity, and prevent crystal defects, and at the same time use deionized water and a small amount of surface The fluorine reacts to form hydrofluoric acid, which is then washed out of the wafer, further consolidating the effect and improving the reliability of the device.

The invention provides luminescent glass ceramic doped with multiple rare earth ions and capable of up and down-conversion to ultraviolet light and a preparation method thereof; the glass ceramic is fluorosilicate glass ceramic doped with at least four rare earth ions, wherein on a basis of oxide, the molar content of the rare earth ions is 1% to 20% of the total amount of the glass ceramic; the glass ceramic can realize up conversion of infrared light and visible light into ultraviolet light, and also realize down conversion of short-wave radiation into ultraviolet light.

The invention discloses a special optical glass with pure red light emission characteristics, a preparation method and application thereof, and belongs to the technical field of special optical glass materials. The special optical glass of the present invention includes a glass matrix, and a reducing agent and a rare earth fluoride doped externally on the basis of the glass matrix; the chemical composition of the glass matrix is: a SiO 2 ‑bZnF 2 ‑cZnCl 2 ‑dLiF‑eMnF 2 ; In the formula, a, b, c, d, e are molar ratio numbers, and its values ​​are respectively: a is 40-50mol.%, b is 15-20mol.%, c is 10-15mol.%, d is 15mol.%, e is 0-15mol.%; the dosing amount of reducing agent is 0.05-3.0mol.%, and the dosing amount of rare earth fluoride is 0.1-2.0mol.%. The invention utilizes the characteristics of phase separation of fluorosilicate glass to regulate the performance of the glass from different dimensions, and finally obtains a special optical glass with good thermodynamic stability and high luminous efficiency. The special optical glass of the invention realizes the pure red light emission of rare earth ions, and can be applied to the fields of glass / optical fiber display, optical fiber temperature sensing, photodynamic therapy and the like.

The present invention provides a semiconductor device and its forming method. The forming method of the semiconductor device comprises the following steps: providing a semiconductor substrate; forming a fluorine-doped silicon glass film layer on the semiconductor substrate; Pretreatment to reduce the precipitation of fluoride ions in the fluorine-doped silicon glass film layer. The present invention pretreats the surface of the fluorine-doped silicate glass film layer, so that the dangling bonds on the surface of the fluorine-doped silicate glass film layer are saturated with oxygen atoms in hydrogen peroxide, thereby passivating the surface of the fluorine-doped silicate glass film layer, and then The speed of fluorine ion precipitation in the fluorine-doped silicon glass film layer is reduced, so that the waiting time between the deposition of FSG, chemical mechanical polishing and the formation of the subsequent covering layer of the fluorine-doped silicon glass film layer does not need to be controlled. The crystal defects that appear improve the reliability of the device, and at the same time, also reduce the process of rework or cleaning, reduce the process time, and improve the process efficiency.