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Manufacturing method of semiconductor device

A manufacturing method and semiconductor technology, applied in the manufacture of microstructure devices, techniques for producing decorative surface effects, decorative art, etc., can solve problems such as structural voids, process device performance impact, fluorine bubbles, etc., and achieve the effect of avoiding impact

Active Publication Date: 2015-09-09
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But if the process temperature exceeds 400 o C, and if it needs to be kept at this temperature for a long time (for example, more than 60 minutes), fluorine will easily cause bubbles, resulting in the formation of structural voids in the substrate and making the surface of the substrate rough, which will affect the subsequent process and The performance of the device has a great influence on the

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  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device

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Embodiment Construction

[0016] Next, the present invention will be described more fully with reference to the accompanying drawings, in which embodiments of the invention are shown. However, this invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.

[0017] It will be understood that when an element or layer is referred to as being "on," "adjacent," "connected to" or "coupled to" another element or layer, it can be directly on the other element or layer. A layer may be on, adjacent to, connected to, or coupled to other elements or layers, or intervening elements or layers may be present. In contrast, when a...

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Abstract

The invention discloses a manufacturing method for a semiconductor device. The method comprises the steps of providing a semiconductor substrate provided with a CMOS device therein, forming a fluorine silica glass layer on the upper surface of the semiconductor substrate; forming a silicon-rich material layer on the fluorine silica glass layer; and forming an MEMS device on the silicon-rich material layer. By forming the silicon-rich material layer after the manufacture of the CMOS device and before the manufacture of the MEMS device, problems that structural holes and rough surfaces which are resulted from bubbles formed by fluorine aggregation in a heat treatment process with a process temperature higher than 400 DEG C and relatively long heat-preservation time can be solved; and thus influences on subsequent processes and performances of the device can be prevented effectively.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for manufacturing a semiconductor device. Background technique [0002] Microelectromechanical systems (MEMS) technology is widely used in the field of industrial control. The MEMS devices prepared by it can be divided into sensors and actuators according to their characteristics. Sensors convert physical quantities such as pressure, acceleration, and temperature into electrical signals; Transducers convert electrical energy into some form of controlled mechanical motion. In addition, other fields of MEMS technology, such as LED packaging, also have important applications. [0003] Compared with the very mature CMOS technology, the MEMS technology started late and is immature. In order to realize the industrial production of MEMS devices, the CMOS technology is used to manufacture MEMS devices, and the integration of CMOS devices and MEMS devices is the focus of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00
Inventor 刘煊杰吴秉寰谢红梅
Owner SEMICON MFG INT (SHANGHAI) CORP
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