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Radio frequency power amplifier based on transformer

A technology of radio frequency power and power amplifying circuit, applied in the direction of power amplifiers, etc., can solve the problems of increasing the number and area of ​​transformers, low quality factor Q of amplifiers, and large loss of transformers, etc., achieving high power and efficiency, improving efficiency, and stable performance Effect

Active Publication Date: 2011-08-03
北京昂瑞微电子技术股份有限公司
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AI Technical Summary

Problems solved by technology

[0005] The problems to be solved by the present invention are: (1) when the traditional radio frequency power amplifier based on transformer-based power synthesis adopts CMOS technology, the transformer loss is large, the quality factor Q of the amplifier is low, and the performance is unstable; (2) with the increase of power increase, the number and area of ​​transformers increase, the performance decreases instead, and it is not easy to adjust

Method used

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  • Radio frequency power amplifier based on transformer
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Embodiment Construction

[0023] In order to facilitate the understanding of those skilled in the art, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0024] The radio frequency power amplifier disclosed by the present invention is as image 3 shown. The RF power amplifier includes an input transformer 301, a drive circuit 302, a control circuit 303, a cascode structure power amplifier circuit 300, an impedance matching network 308, an output transformer 309, an output capacitor 310, and a voltage limiting and current limiting circuit. 311 and bonding wire 312. The power amplifying circuit 300 includes common source transistors 304 and 305 and common gate transistors 306 and 307 . Impedance matching network 308 adopts LC network.

[0025] The input terminals of the input transformer 301 are respectively connected to the single-ended radio frequency input signal RF IN and ground, the output terminal is connected to the ...

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Abstract

The invention relates to a radio frequency power amplifier based on a transformer, comprising an input transformer, a driving circuit, a power amplification circuit, an impedance matching network and an output transformer that are successively connected; the input end of the input transformer is respectively connected with a single-end radio frequency input (RFIN) signal and the ground; the output end of the input transformer is connected with the input end of the driver circuit; the single-end radio frequency input signal is converted into a differential signal, and the differential signal is output to the driver circuit; the differential signal of the driver circuit is output to the power amplification circuit after being amplified; and the power amplification circuit is in the cascode structure. In the radio frequency power amplifier, devices, such as an inductor, a capacitor, a transformer and the like are integrated on a substrate, impact on the performance of the amplifier by the complementary metal oxide semiconductors (CMOS) technology is effectively avoided on the premise of furthest utilizing the advantages of the CMOS technology, and circuit efficiency is improved; and compared with the traditional totally-integrated radio frequency power amplifier, the radio frequency power amplifier disclosed by the invention has the advantages of higher power and efficiency and more stable performance.

Description

technical field [0001] The invention relates to the technical field of radio frequency power amplifiers, in particular to a transformer-based radio frequency power synthesis technology. Background technique [0002] In order to meet the transmission needs of mobile devices, the RF power amplifier usually needs to reach an output power of several watts. To meet such a large output power, it is usually realized by impedance transformation, power synthesis or a combination of the two. Since the transformer technology can complete the functions of impedance transformation and power synthesis at the same time, it is widely used in the design of radio frequency power amplifiers. [0003] At present, the RF power amplifier technology using transformers is mainly divided into two ways: on-chip integration and off-chip setting. On-chip integration mainly uses CMOS technology or GaAs technology to integrate transformers and other circuits into one chip; off-chip setting mainly uses t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F3/20
Inventor 刘元王阆
Owner 北京昂瑞微电子技术股份有限公司
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