A method for suppressing crystal defects of fluorosilicate glass

A technology for fluorosilicate glass and crystal defects, which is applied in the field of processing fluorosilicate glass crystal defects, can solve the problems of increasing process steps, affecting device reliability, and high cost, so as to suppress hydrophilicity, prevent crystal defects, and improve reliability Effect
CN103871966BActive Publication Date: 2017-05-10WUHAN XINXIN SEMICON MFG CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
WUHAN XINXIN SEMICON MFG CO LTD
Publication Date
2017-05-10

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Abstract

A method for suppressing crystal defects of fluorosilicate glass, comprising the following steps: Step 1, depositing a layer of fluorosilicate glass on the surface of a wafer; Step 2, performing plasma treatment on the upper surface of the fluorosilicate glass to form a layer of low-fluorine oxide layer; Step 3, rinsing the wafer with deionized water; Step 1 and Step 2 are carried out in the same chemical vapor deposition reaction chamber. The beneficial effects of the present invention are: after the deposition of the fluorosilicate glass, plasma treatment is carried out in the same cavity to reduce the fluorine on the upper surface of the fluorosilicate glass, suppress its hydrophilicity, and prevent crystal defects, and at the same time use deionized water and a small amount of surface The fluorine reacts to form hydrofluoric acid, which is then washed out of the wafer, further consolidating the effect and improving the reliability of the device.
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Description

technical field

[0001] The invention relates to a wafer surface treatment method, in particular to a treatment method for fluorosilicate glass crystal defects. Background technique

[0002] In the aluminum manufacturing process of semiconductors, fluorosilicate glass (FSG: Fluorinated Silicate Glass) has a low dielectric constant, good hole filling performance and stable mechanical constants, and has gradually replaced undoped silicon oxide (USG) as the basis for interlayer isolation. medium layer. However, due to the hydrophilicity of FSG, it is easy to absorb water vapor in the air to generate crystal defects, which affects the reliability of the device. In the prior art, a cover layer such as USG or SRO is grown after FSG deposition to suppress the diffusion of fluorine, but this increases the process steps and the cost is high. Contents of the invention

[0003] The object of the present invention is to provide a wafer surface treatment method, which can better suppr...

Claims

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