Semiconductor device and forming method thereof

Abstract

The invention provides a semiconductor device and a forming method thereof. The forming method of the semiconductor device comprises the steps of providing a semiconductor substrate; forming a fluorine-doped silica glass film layer on the semiconductor substrate; and carrying out pretreatment on the surface of the fluorine-doped silica glass film layer so as to reduce the precipitation of fluorineions in the fluorine-doped silica glass film layer. According to the invention, the surface of the fluorine-doped silica glass film layer is pretreated, so that dangling bonds on the surface of the fluorine-doped silica glass film layer are saturated by oxygen atoms in hydrogen peroxide, the surface of the fluorine-doped silica glass film layer is passivated, the precipitation speed of fluorine ions in the fluorine-doped silica glass film layer is reduced, and the waiting time of the fluorine-doped silica glass film layer among FSG deposition, chemical mechanical grinding and subsequent covering layer formation does not need to be controlled, so that the crystal defects are overcome, and the reliability of the device is improved. Meanwhile, the reworking or cleaning procedures are reduced, the process time is shortened, and the process efficiency is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method. Background technique [0002] Fluorinated Silicate Glass (FSG: Fluorinated Silicate Glass) is widely used as a material in the back-end technology of integrated circuit manufacturing. It has low dielectric constant, good hole filling performance and stable mechanical constant. It has gradually replaced undoped silicon oxide ( USG) becomes the dielectric layer for interlayer isolation. However, due to the hydrophilicity of FSG, it is easy to absorb water vapor in the air to generate crystal defects, which affects the reliability of the device. [0003] The traditional solution is to control the waiting time between the deposition of FSG, chemical mechanical polishing, and the formation of the subsequent covering layer, thereby reducing the interval time in the preparation process steps. However, if the waiting time exceeds th...

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Problems solved by technology

However, due to the hydrophilicity of FSG, it is easy to absorb water vapor in the air to produce crystal defects, which affects the reliability of the device.

[0003] The traditional solution is to control the waiting time between the deposition of FSG, chemical mechanical polishing, and the formation of the subsequent covering layer, thereby reducing the interval time in the preparation process steps. However, if the waiting time exceeds the time limit, the above defects will still occur. Therefore, it is necessary to increase the cleaning process or rework

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