Positive resist composition and patterning process

a composition and resist technology, applied in the field of positive resist composition and patterning process, can solve the problems of reducing the resolution of two-dimensional patterns such as hole patterns, sensitivity lowering, etc., and achieve the effects of high resolution, high sensitivity, and high decomposition efficiency of acid generators

Active Publication Date: 2020-12-17
SHIN ETSU CHEM IND CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0024]The positive resist composition has a high decomposition efficiency of the acid generator, a remarkable acid diffusion-suppressing effect, a high sensitivity, and a high resolution, and forms a pattern of good profile with improved edge roughness and size variation after exposure and development. By virtue of these properties, the resist composition...

Problems solved by technology

This invites a lowering of sensitivity and a drop of dissolution contrast, raising th...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Positive resist composition and patterning process
  • Positive resist composition and patterning process
  • Positive resist composition and patterning process

Examples

Experimental program
Comparison scheme
Effect test

examples

[0171]Examples of the invention are given below by way of illustration and not by way of limitation. All parts are by weight (pbw). Mw and Mw / Mn are determined by GPC versus polystyrene standards using THE solvent.

[1] Synthesis of Monomers

synthesis examples 1-1 to 1-16

[0172]Synthesis of Monomers 1 to 16

[0173]Monomer 1 of the following formula was prepared by mixing 2-(dimethylamino)ethyl methacrylate with N-[(trifluoromethyl)sulfonyl]-2,3,5-triiodobenzamide in a molar ratio of 1 / 1. Monomers 2 to 16 were similarly obtained by mixing a nitrogen-containing monomer with an N-carbonylsulfonamide having an iodized aromatic ring.

[2] Synthesis of Polymers

[0174]PAG Monomers 1 to 3 identified below were used in the synthesis of polymers.

synthesis example 2-1

[0175]Synthesis of Polymer 1

[0176]A 2-L flask was charged with 3.9 g of Monomer 1, 8.4 g of 1-methyl-1-cyclopentyl methacrylate, 5.4 g of 4-hydroxystyrene, and 40 g of tetrahydrofuran (THF) as solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warned up to room temperature, whereupon 1.2 g of azobisisobutyronitrile (AIBN) was added. The reactor was heated at 60° C., whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitated white solid was collected by filtration and vacuum dried at 60° C., yielding Polymer 1. Polymer 1 was analyzed for composition by 13C- and 1H-NMR and for Mw and Mw / Mn by GPC.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Nanoscale particle sizeaaaaaaaaaa
Nanoscale particle sizeaaaaaaaaaa
Wavelengthaaaaaaaaaa
Login to view more

Abstract

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of N-carbonylsulfonamide having an iodized aromatic ring, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and dimensional uniformity, and forms a pattern of good profile after exposure and development.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This non-provisional application claims priority under 35 U.S.C. § 119(a) on Patent Application No. 2019-111991 filed in Japan on Jun. 17, 2019, the entire contents of which are hereby incorporated by reference.TECHNICAL FIELD[0002]This invention relates to a positive resist composition and a patterning process using the composition.BACKGROUND ART[0003]To meet the demand for higher integration density and operating speed of LSIs, the effort to reduce the pattern rule is in rapid progress. The logic devices used in smart phones or the like drive forward the miniaturization technology. Logic devices of 10-nm node are manufactured in a large scale using a multi-patterning lithography process based on ArF lithography.[0004]In the application of lithography to next 7-nm or 5-nm node devices, the increased expense and overlay accuracy of multi-patterning lithography become tangible. The advent of EUV lithography capable of reducing the number of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G03F7/039C08F220/34C08F220/38
CPCG03F7/039G03F7/2004C08F220/382C08F220/34G03F7/0397G03F7/0045C08F220/24C08F220/18C08F220/1806C08F212/24C08F220/1807C08F226/06C08F212/28C08F220/38C08F212/30G03F7/162G03F7/30C08F8/44C08F220/04
Inventor HATAKEYAMA, JUNOHASHI, MASAKIFUJIWARA, TAKAYUKI
Owner SHIN ETSU CHEM IND CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap