Process for manufacturing patterning sapphire substrate

Abstract

The invention relates to a method for manufacturing a patterning inductive coupling plasma sapphire substrate. The process for manufacturing the patterning inductive coupling plasma sapphire substrate comprises the following steps: conducting cleaning processing on the sapphire substrate; conducting alignment installation on sapphire and the substrate, arranging uniform glue on the front face according to the set distance, and coating the uniform glue on the substrate; 1.3, conducting projection exposure according to the preset exposure condition; conducting developing processing on the substrate after the exposure, conducting dry-etching processing on the substrate after developing, and using photoresist on the surface of the substrate as an etching mask; setting the temperature and the vacuum degree of an inductive coupling plasma etching cavity, and the control temperature of a cooling circulation machine, and then placing the substrate after the dry-etching processing into a slide glass base station in the etching cavity; etching the substrate by filling inductive coupling plasma etching gas into the substrate, and controlling the speed and quality of etching by outputting frequency source power and refraction frequency source power; meanwhile, cooling the slide glass base station through the cooling circulation machine. According to the method for manufacturing the inductive coupling plasma sapphire substrate, the productivity and the graphical consistency are greatly improved, the rate of finished products is high, and the process is stable.

Description

technical field [0001] The invention relates to the field of manufacturing sapphire substrates, in particular to a method for manufacturing a patterned inductively coupled plasma sapphire substrate. Background technique [0002] At present, sapphire is mostly used as the substrate material of LED, because the sapphire substrate has the characteristics of mature technology, high mechanical strength and stable device. Most of the sapphire substrates for GaN growth are C-plane sapphire substrates. This is mainly because the process of growing sapphire crystals along the C-axis is mature, the cost is relatively low, and the physical and chemical properties are stable. The technology for epitaxy on the C-plane is mature and stable. However, the GaN thin film grown on the C-plane sapphire substrate is grown along its polar axis, that is, the c-axis direction, and the thin film has spontaneous polarization and piezoelectric polarization effect, resulting in a strong interna...

AI Technical Summary

Problems solved by technology

[0003] Various substrate patterns are now made, but the steps are cumbersome, and a certain pattern needs to be made with a photomask in advance, and the productivity is low, the pattern consistency is low, the yield is low, and the process is unstable.

Images