45results about How to "Reduce standing wave effect" patented technology

The invention relates to a method for manufacturing a graphical sapphire substrate. The method comprises the following steps of: performing spin-coating treatment on a substrate to be photoetched; aligning and installing a mask plate and the substrate and installing the mask plate above the substrate according to set distance; performing projection exposure according to preset exposure conditions; performing developing treatment on the exposed substrate; performing roasting treatment on the developed substrate, and taking photoresist on the surface of the substrate as an etching mask; after setting the temperature and the vacuum degree of an etching cavity, the temperature of a shield cover and the control temperature of a cooling circulation mechanism, placing the roasted substrate on a slide glass base station in the etching cavity; introducing an etching gas for etching the substrate; controlling etching speed and quality by anode radio frequency source power and bias radio frequency source power; and simultaneously, cooling the slide glass base station by using the cooling circulation mechanism. By the method, the graphical substrate production efficiency is high and the luminous efficiency of a chip produced by using the substrate is high and stable.

The invention discloses a radio frequency device which is used for a plasma treatment device and comprises a radio-frequency power supply, a radio-frequency matcher and at least two groups of inductive coupling coils, wherein the proportion of the radio-frequency current in the inductive coupling coils is regulated by a current regulating device; and the current regulating device comprises a variable capacitor and an inductance component. The imaginary part of the total impedance including the current regulating device and the inductive coupling coils is inductive by reasonably setting the inductance value of the inductance component; and the impedance matching is realized by the traditional radio-frequency matcher comprising a plurality of capacitive components when the imaginary part of the total impedance is inductive, the matching process is simple and practicable, and the cost is also lower.

The invention provides a PECVD apparatus. The apparatus comprises a cavity, a wafer carrier, a plurality of radio frequency electrodes, a transmission device and a lifting device. The cavity is provided with a gas inlet and a gas outlet, and is also provided with a first transmission hole and a second transmission hole; the wafer carrier includes a plurality of carrying plates vertically arranged in a spaced manner along a fore-and-aft direction, and the wafer carrier can vertically move between an upper portion position and a lower portion position in a reaction chamber; and the radio frequency electrodes are arranged at the top of the reaction chamber and are perpendicular to the top surface, the radio frequency electrodes are arranged in a spaced manner along a fore-and-aft direction, and the radio frequency electrodes are correspondingly inserted into a space between adjacent carrying plates when the wafer carrier is positioned in the upper position of the reaction chamber. The PECVD apparatus has the advantages of productivity increase, occupied area reduction, processing difficulty and cost reduction, weakening of the standing wave effect on the radio frequency electrodes, and film surface quality improvement.

The present invention relates to a bottom anti-reflection coating composition which comprises a molecule glass compound comprising two or more hydroxy structures, a vinyl ethers compound comprising two or more vinyl ether sealed ends and a random photoacid generator. The composition can be used for photoetching processes such as a G wire, 365nm, 248nm, 193nm and the like. The light reflection effect can be effectively reduced, so that the resolution ratio of a photoetched pattern is improved and roughness of the wire edge is reduced; and moreover, an additional etching process does not need to be added to remove the bottom anti-reflection coating composition. In addition, the present invention also relates to a method for forming an erect image by using the anti-reflection coating composition.

Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by a variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor devices, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising a light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

A magnetic head incorporates: a medium facing surface; a coil; a pole layer; first and second shields disposed to sandwich the pole layer therebetween; a first gap layer disposed between the first shield and the pole layer; a second gap layer disposed between the second shield and the pole layer; and a substrate. The first shield is located closer to the substrate than the second shield. The magnetic head further incorporates an antireflection film disposed between the first shield and the first gap layer or between the first gap layer and the pole layer. The pole layer is formed by frame plating.

The invention relates to a fluorine-containing polymer for photoresist, a top anti-reflection film composition containing the fluorine-containing polymer and application of the fluorine-containing polymer in the photoresist. The structural formula of the fluorine-containing polymer for the photoresist is CF2(CF3)CF2-[O-CF(CF3)CF2]n-O-CF(CF3)COO-R, wherein n is in a range of 1-8, and R is one or more selected from the group consisting of H, NH4 or other similar structures. On the basis of the weight of the entire polymer, the content a of a polymer component having a number average molecular weight of less than 550 is 0-12%; the content b of a polymer component with a number-average molecular weight of 650-900 is 75%-90%; the content c of a polymer component with a number-average molecularweight of 980-1050 is 5%-15%; and the content d of a polymer component having a number average molecular weight of greater than 1150 is 0-10%, wherein a and d are equal to 0 at the same time, or any one of a and d is equal to 0, or a and d are not equal to 0 at the same time. By controlling the content distribution of the polymer components with different molecular weights in the fluorine-containing polymer, the fluorine-containing polymer meeting specific composition requirements is obtained; and the fluorine-containing polymer is easy to degrade, low in toxicity and friendly to environment,and can be used for preparing a top anti-reflection film with a low refractive index.

The invention relates to a method for photoengraving a graphical sapphire substrate. The method comprises the following steps of: carrying out spin coating treatment on a substrate to be photoengraved; aligning and mounting a mask plate and the substrate and setting a projection ratio for projecting a graph of the mask plate to the substrate through a lens control module; regionally projecting and exposing in the projection ratio according to the preset exposure conditions; and developing and processing the substrate. The invention also relates to a system for photoengraving the graphical substrate, comprising a spin coating module for carrying out the spin coating treatment on the substrate to be photoengraved, a mask mounting module for aligning and mounting the mask plate and the substrate, the lens control module for setting the projection ratio for projecting the graph of the mask plate to the substrate, an exposure module for regionally projecting and exposing in the projection ratio according to the preset exposure conditions and a developing module for developing and processing the substrate. The method and the system provided by the invention photoengrave the graphical substrate through graphical projection in a non-contact mode and avoid the defects of low resolution, low production efficiency and low graphical consistency of the system for photoengraving and exposing the graphical substrate.

The invention discloses equipment and a process for preparing a back passivation solar cell. The equipment and the process for preparing the back passivation solar cell comprise a feeding cavity, a first process cavity, an isolation cavity, a second process cavity and a discharging cavity, valves are arranged among cavity bodies of the feeding cavity, the first process cavity, the isolation cavity, the second process cavity and the discharging cavity; heating plates are laid in the first process cavity and the second process cavity, a transmission roller is arranged in each cavity which is connected in sequence, a tray loaded with a silicon wafer is transmitted on the rollers, and the tray loaded with the silicon wafer passes through the feeding cavity, the first process cavity, the isolation cavity, the second process cavity and the discharging cavity in sequence. Through the mode, a tunneling silicon dioxide film layer and a doped amorphous/microcrystalline silicon film layer of the Topcon solar cell are prepared at the same time, the Topcon solar cell with higher efficiency can be prepared, ion damage is avoided, dynamic transmission is achieved, the uniformity of the film layers is improved, and the productivity is improved.

The invention provides a forming method of a through hole, which comprises the steps of: providing a substrate, wherein a medium layer is arranged on the substrate; coating a photoresistance layer on the medium layer; imaging the photoresistance in an exposure manner; developing the photoresistance layer to remove the photoresistance layer of the exposure layer; oxidizing the photoresistance layer; and etching the medium layer by using left photoresistance layer to form a through hole, and removing the left photoresistance layer. The forming method of the through hole solves the problem of wider burr structure generated by standing wave effect during the exposure of the photoresistance layer, ensures that the quality of the formed through hole is better, and is beneficial to the reduction of the production cost.

Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

The invention provides a photoetching method for improving the adhesion degree of a photoresist and a substrate, and relates to the technical field of photoetching processes. The photoetching method for improving the adhesion degree of the photoresist and the substrate comprises the following steps: baking the substrate; carrying out glue homogenizing treatment on the baked substrate; carrying outexposure treatment on the substrate subjected to glue uniformization; carrying out exposure and drying on the exposed substrate; standing and cooling the substrate which is dried after exposure; anddeveloping the substrate. According to the photoetching method provided by the invention, a substrate surface tackifier does not need to be used, and the adhesion degree between the substrate and thephotoresist can be effectively improved by the baking of the substrate before homogenizing of the photoresist, the baking after exposure and the standing and cooling after baking, so that the processrequirement is met, and an equipment module does not need to be additionally added.

Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of the bottom film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

The present invention provides a composition for forming a top anti-reflection coating having such a low refractive index that it can be suitably used in pattern formation with an ArF excimer laser beam, and further the invention also provides a pattern formation method employing that composition. The top anti-reflection coating composition comprises a particular naphthalene compound, a polymer, and a solvent. The composition is used for forming a top anti-reflection coating provided on a photoresist layer. From the photoresist layer, a pattern can be formed by use of light in 160 to 260 nm.

The invention provides a plasma processing device. The device comprises a first pole plate and a second pole plate which are oppositely arranged, wherein the first pole plate comprises a plurality of first sub-pole plates; gaps are arranged among the first sub-pole plates; the first sub-pole plates are respectively connected with a plasma excitation power supply; the second pole plate comprises a plurality of second sub-pole plates; the second sub-pole plates correspond to the first sub-pole plates one to one; gaps are arranged among the second sub-pole plates; and the shapes of the second sub-pole plates are the same as or similar to the shapes of the corresponding first sub-pole plates and the centers of the second sub-pole plates align with the centers of the first sub-pole plates. The device has the following advantages: the standing wave effects of the sub-pole plates can be reduced; and meanwhile, the problem of poorer uniformity of the airflow from the centers to the edges of the large-area pole plates can be avoided.

Systems and methods for active control of radial etch uniformity are described. One of the methods includes generating a radio frequency (RF) signal having a fundamental frequency and generating another RF signal having a harmonic frequency. The harmonic frequency, or a phase, or a parameter level, or a combination thereof of the other RF signal are controlled to control harmonics of RF plasma sheath within a plasma chamber to achieve radial etch uniformity.