Method and system for photoengraving graphical sapphire substrate
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- 长治虹源科技晶体有限公司
- Publication Date
- 2011-06-08
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to the field of manufacturing sapphire substrates, in particular to a photolithography method and system for patterning a sapphire substrate. Background technique
[0002] At present, in the process of producing patterned sapphire substrates in most domestic enterprises, most of the lithography exposure systems use contact lithography machines. Due to the equal proportion of lithography transfer, the line width of the pattern is not high, and the pattern size is more than 2 μm. Low yield, low productivity, and poor pattern consistency lead to reduced yield. Contents of the invention
[0003] The technical problem to be solved by the present invention is to provide a non-contact and graphic projection method for the defects of low resolution, low productivity, and low pattern consistency of the photolithography exposure system of the prior art patterned sapphire substrate. Photolithographic method and system for sapphire substra...