A
gallium antimonide polished
wafer surface defect control process method relates to a
wafer polishing technology, and comprises the following steps: firstly, optimizing a
crystal outer circle rolling process, and controlling a
crystal outer circle rolling feed amount and a
crystal movement rate to obtain a surface with a compact
crystal structure and good smoothness; a crystal chamfering process is designed, and the number of
grinding wheel meshes, the number of chamfering turns and the feeding speed of chamfering in different states are optimized; the size of the
radius of the main positioning fillet of the
wafer is designed, and the original sharp corner of the main edge is changed into a fillet, so that the fillet of the main edge can bear the external force and does not have the problems of falling off,
slag falling and the like; a
gallium antimonide wafer edge end face
polishing technology is designed to obtain a compact and bright
edge structure and a beveling-free track, finally, the three
polishing processes of the
gallium antimonide wafer are optimized, through
process control of a
system, the structure of the wafer edge is stable, wafer edge falling is greatly reduced, the final polishing dark scratch of the wafer is reduced from 60% to 10%, and the polishing quality of the wafer is improved. And the final one-time polishing passing rate is greatly improved.