The application discloses an IGBT device, which is formed by a plurality of cells in parallel, each of the cells is formed in an active region on a
wafer, and a gate structure of each of the cells adopts a
trench gate, the
trench gate comprises a
gate dielectric layer formed on an inner surface of a gate trench and a
polysilicon gate filled in the gate trench; when the
polysilicon gate completely fills the gate trench, a corresponding first stress is generated on the
wafer; in a top view, the active region is divided into two or more area blocks, the gate trench in each of the area blocks is in a strip structure and is arranged in parallel, the strip structures of the gate trenches in two adjacent area blocks are not parallel and have an included angle, so that the directions of the first stress on the
wafer generated by the polysilicon gates in the two adjacent area blocks are different, and the
resultant stress generated by each of the polysilicon gates on the wafer is reduced or disappears. The application can improve the uniformity of IGBT
device parameters on the same wafer, and thereby improves the product yield.