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Tungsten target diffusion welding method and target assembly

A technology of diffusion welding and target materials, which is applied in welding equipment, welding/welding/cutting items, non-electric welding equipment, etc., and can solve problems such as difficult diffusion welding and cracks

Inactive Publication Date: 2018-05-01
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide a tungsten target diffusion welding method and a target assembly, so as to alleviate the cracks in the prior art when the tungsten target is directly welded to the copper alloy back plate, and the tungsten target and the aluminum intermediate layer, Technical problem of difficult diffusion welding between aluminum interlayer and copper alloy

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  • Tungsten target diffusion welding method and target assembly
  • Tungsten target diffusion welding method and target assembly
  • Tungsten target diffusion welding method and target assembly

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Experimental program
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Embodiment 1

[0048] This embodiment provides a method for diffusion welding of a tungsten target 100, which specifically includes the following steps:

[0049] S1. Coating a titanium metal film 400 on the welding surface of the tungsten target 100 to form a titanium-coated tungsten target 100;

[0050] S2. Coating a layer of titanium metal film 400 on the upper and lower welding surfaces of the aluminum intermediate layer 200 to form a titanium-coated aluminum intermediate layer 200;

[0051] S3. Coating a layer of titanium metal film 400 on the welding surface of the copper alloy backplane 300 to form a titanium-plated copper alloy backplane 300;

[0052] S4. Assemble the titanium-coated tungsten target 100, the titanium-coated aluminum intermediate layer 200 and the titanium-coated copper alloy back plate 300 to form an assembly. In the assembled state, the titanium-coated aluminum intermediate layer 200 is located between the titanium-coated tungsten target 100 and the titanium-coated ...

Embodiment 2

[0069] This embodiment provides a target assembly for semiconductor sputtering, including:

[0070] The first steel plate 500, the tungsten target material 100, the aluminum intermediate layer 200, the copper alloy back plate 300 and the second steel plate 600 arranged in sequence from top to bottom; between the tungsten target material 100 and the aluminum intermediate layer 200, and the aluminum intermediate layer 200 A titanium metal layer is provided between the copper alloy back plate 300 .

[0071] Wherein, the titanium metal layer between the tungsten target 100 and the aluminum intermediate layer 200 consists of the titanium metal film 400 coating on the lower surface of the tungsten target 100 and the titanium metal film 400 coating on the upper surface of the aluminum intermediate layer 200 .

[0072] Wherein, the titanium metal layer between the aluminum intermediate layer 200 and the copper alloy backplane 300 is composed of the titanium metal film 400 coating on t...

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Abstract

The invention relates to the technical field of semiconductor targets, in particular to a tungsten target diffusion welding method and a target assembly. The technical problems that a crack is prone to occurring when a tungsten target is directly welded to a copper alloy backing plate, and diffusion welding is not prone to being conducted between the tungsten target and an aluminum intermediate layer as well as between the aluminum intermediate layer and the copper alloy existing in the prior art are solved. The tungsten target diffusion welding method comprises the steps that firstly a weld face of the tungsten target is plated with a layer of titanium metal film to form a titanium-plated tungsten target, each of an upper weld face and a lower weld face of the aluminum intermediate layeris plated with a layer of titanium metal film to form a titanium-plated aluminum intermediate layer, and a weld face of the copper alloy backing plate is plated with a layer of titanium metal film toform a titanium-plated copper alloy backing plate; and then the titanium-plated tungsten target, the titanium-plated aluminum intermediate layer and the titanium-plated copper alloy backing plate areassembled to form an assembly body, wherein the titanium-plated aluminum intermediate layer is located between the titanium-plated tungsten target and the titanium-plated copper alloy backing plate. According to the technical scheme provided by the tungsten target diffusion welding method, occurring of the crack can be avoided, and diffusion welding is easy.

Description

technical field [0001] The invention relates to the technical field of semiconductor targets, in particular to a tungsten target diffusion welding method and a target component. Background technique [0002] Tungsten targets for semiconductor sputtering generally require copper alloy materials with higher strength and higher electrical conductivity as the back plate to be welded to them. Tungsten material is a brittle material, which is prone to cracks in the process of impact or deformation, while the copper alloy back plate is a material with a large expansion coefficient. The large difference in expansion coefficient between the two causes stress deformation in the product, which leads to cracks in tungsten. In addition, the tungsten and the copper alloy backplane require a higher soldering temperature to diffuse together. Since the tungsten target for semiconductor is difficult to diffusion weld with the copper alloy backplane, in related patents, a pure aluminum inter...

Claims

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Application Information

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IPC IPC(8): B23K20/02B23K20/233B23K20/24B23K20/14C23C14/34B23K103/18
CPCB23K20/021B23K20/023B23K20/14B23K20/2333B23K20/24C23C14/3407
Inventor 姚力军潘杰王学泽廖培君
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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