Inductively Coupled Plasma Implantation Device

Abstract

The invention discloses an inductive coupling plasma coil which comprises two groups of radio-frequency coils formed in a back-bending mode. A plane S-shaped parallel connection way is adopted in space structures of two groups of the radio-frequency coils, and two groups of the radio-frequency coils are strictly symmetrical in space distribution so that the directions of radio frequency current of the same coil position are the same. The invention further discloses an inductive coupling plasma injection device provided with the inductive coupling plasma coil. According to the inductive coupling plasma coil and the injection device, on one hand, standing wave effect in the coil can be reduced and uniformity of plasma can be increased, and on the other hand, impedance matching can be well achieved, coupling effect of the plasma is increased, the probability of chip pollution caused by sputtering of a quartz window due to over-high voltage is lowered, the uniform high-density plasma of a large area can be generated in a reaction cavity of a large area, and therefore requirements of laboratory rooms and industry in the micro electronics field are met.

Description

technical field [0001] The invention belongs to the technical field of semiconductor processing equipment, in particular to an inductively coupled plasma injection device. Background technique [0002] Plasma devices are widely used in ion implantation, etching, and thin film deposition processes. With the continuous development of integrated circuit technology, especially flat panel display devices, the plasma source is required to have good characteristics such as high density and large area uniformity. [0003] ICP inductively coupled plasma source has the advantages of inductively coupled plasma source (ICP) with high density, independent control of ion energy and density, and simple equipment, and has been widely used in integrated circuit technology. ICP inductively coupled plasmas are typically plasma excited by coils at low pressures. The ICP equipment supplies high-frequency power to the coil to generate an alternating electromagnetic field, and the electromagneti...

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Problems solved by technology

[0006] The purpose of the present invention is to overcome the existing inductively coupled plasma implantation equipment with the increase of the size of the sample, the size of the plasma coil increases accordingly, and the excessive inductance increases the voltage at both ends of the coil, thereby causing the sputtering of the quartz window to contaminate the wafer , and due to the existence of the standing wave effect, the plasma produces radial and azimuthal inhomogeneity, which has many adverse effects on the semiconductor process.

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