Fluorine-containing polymer for photoresist, top antireflection film composition containing same and application in photoresist

An anti-reflection film and polymer technology, applied in photosensitive materials for optomechanical equipment, optics, optomechanical equipment, etc., can solve problems such as processability, film-forming refractive index or insufficient raw material cost, and avoid standing Wave effect, reduce standing wave effect, produce easy effect

Active Publication Date: 2021-06-11
GANSU HUALONG SEMICON MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although the fluorine-containing polymers used for the top anti-reflection film in the above-mentioned prior art can be used to form the top anti-reflection film for lithography, there are still some deficiencies in processability, film-forming property, refractive index or raw material cost.

Method used

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  • Fluorine-containing polymer for photoresist, top antireflection film composition containing same and application in photoresist
  • Fluorine-containing polymer for photoresist, top antireflection film composition containing same and application in photoresist
  • Fluorine-containing polymer for photoresist, top antireflection film composition containing same and application in photoresist

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preparation example Construction

[0040] Preparation of perfluoropolyether carboxylic acid:

[0041] First add 50ml of acetonitrile and 50ml of tetraethylene glycol dimethyl ether into a 1L polymerization kettle, then add 5g of catalyst KF into the polymerization kettle, stir and mix evenly, replace with high-purity nitrogen three times, and pump negative pressure to -0.1MPa , cooled to the set temperature of 0°C, and 50g of hexafluoropropylene oxide was introduced. Timed feeding (50g / h) is adopted to control the reaction process, and the temperature is controlled between 0 and 10°C. After adding hexafluoropropylene oxide to 1000 g, return to normal pressure. After the reaction is complete, keep stirring for two hours, stop stirring, and return to room temperature to obtain a mixture.

[0042] The mixture is separated into layers, the reaction product in the lower layer is separated by centrifugation and filtration, and the reaction product is added to a distillation device. Perfluoropolyetheryl fluoride wit...

Embodiment 1

[0048] The above-mentioned perfluoropolyether carboxylic acids with different degrees of polymerization are mixed, and the mixing ratio is as follows: by weight, 10% perfluoropolyether carboxylic acid A, 66% perfluoropolyether carboxylic acid B, 19% perfluoropolyether carboxylic acid Ether carboxylic acid C, 1% perfluoropolyether carboxylic acid D, 4% perfluoropolyether carboxylic acid E. The perfluoropolyether carboxylic acid was thus obtained, the specific composition of which is shown in Table 1.

Embodiment 2

[0050] The above-mentioned perfluoropolyether carboxylic acids with different degrees of polymerization are mixed, and the mixing ratio is as follows: by weight, 4% perfluoropolyether carboxylic acid A, 58% perfluoropolyether carboxylic acid B, 28% perfluoropolyether carboxylic acid Ether carboxylic acid C, 8% perfluoropolyether carboxylic acid D, 2% perfluoropolyether carboxylic acid F. The perfluoropolyether carboxylic acid was thus obtained, the specific composition of which is shown in Table 1.

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Abstract

The present invention relates to a fluoropolymer for photoresist, a top anti-reflection film composition comprising the same, and its application in photoresist. The structural formula of the fluoropolymer for photoresist is as follows: CF2(CF3)CF2-[O-CF(CF3)CF2]n-O-CF(CF3)COO-R, wherein n is in the range of 1-8 , R is one or more of H, NH4 or other similar structures; based on the weight of the whole polymer, the content a of the polymer component with n≦1 is 0-12%, and the polymer group with n is 2 The content b of the component is 55-80%, the content c of the polymer component where n is 3 is 15-30%, the content d of the polymer component where n is 4 is 0-15%, and the polymer with n≥5 The content e of the component is 0-8%, and b+c≥80%, and a, d and e are 0 at the same time or any one of them is 0 or not 0 at the same time. In the present invention, by controlling the content distribution of polymer components with different molecular weights in the fluoropolymer, a fluoropolymer that meets the specific composition requirements of the present invention is obtained. The fluoropolymer is easy to degrade, has low toxicity, is environmentally friendly, and can be used for A top antireflection with a lower index of refraction is prepared.

Description

technical field [0001] The present invention relates to the technical field of top anti-reflection film for photoresist, in particular to a fluorine-containing polymer for preparing top anti-reflection film, a composition for preparing top anti-reflection film containing it, and the Top antireflection film for photoresist prepared from fluoropolymer or composition. Background technique [0002] Photolithography technology is a method of transferring the semiconductor circuit pattern on the photomask to the silicon wafer. By irradiating the photomask with laser or electron beam, the material properties of the photosensitive substance on the wafer are changed due to light sensitivity. In order to complete the process of pattern transfer, the existing photolithography technology is the most critical process unit in the manufacture of semiconductors, flat panel displays and other devices. However, there is a technical problem of light scattering in the existing photolithography...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/004C07C51/58C07C51/04C07C59/315G03F7/09
CPCC07C51/04C07C51/58C07C59/315G03F7/004G03F7/091
Inventor 李永斌
Owner GANSU HUALONG SEMICON MATERIAL TECH CO LTD
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