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Fluorine-containing polymer for photoresist, top antireflection film composition containing same and application in photoresist

The present invention relates to a fluoropolymer for photoresist, a top anti-reflection film composition comprising the same, and its application in photoresist. The structural formula of the fluoropolymer for photoresist is as follows: CF2(CF3)CF2-[O-CF(CF3)CF2]n-O-CF(CF3)COO-R, wherein n is in the range of 1-8 , R is one or more of H, NH4 or other similar structures; based on the weight of the whole polymer, the content a of the polymer component with n≦1 is 0-12%, and the polymer group with n is 2 The content b of the component is 55-80%, the content c of the polymer component where n is 3 is 15-30%, the content d of the polymer component where n is 4 is 0-15%, and the polymer with n≥5 The content e of the component is 0-8%, and b+c≥80%, and a, d and e are 0 at the same time or any one of them is 0 or not 0 at the same time. In the present invention, by controlling the content distribution of polymer components with different molecular weights in the fluoropolymer, a fluoropolymer that meets the specific composition requirements of the present invention is obtained. The fluoropolymer is easy to degrade, has low toxicity, is environmentally friendly, and can be used for A top antireflection with a lower index of refraction is prepared.
Owner:GANSU HUALONG SEMICON MATERIAL TECH CO LTD
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