155 results about "Hansen solubility parameter" patented technology

The invention discloses a photoresist stripping liquid composition as well as a preparation method and application thereof, and relates to the technical field of photoresist stripping materials. The amide solvent is added, and the Hansen solubility parameter delta of the amide solvent is controlled to be close to the range of the solubility parameter of the photoresist, so that the capacity of the photoresist stripping liquid composition for dissolving the photoresist is maximized. Meanwhile, due to the existence of the amide solvent, the alcohol ether solvent can be selected from a monohydroxy alcohol ether solvent and a dihydroxy alcohol ether solvent which are mixed for use, so that the washing effect of the photoresist stripping liquid composition is improved. By controlling the octanol / water partition coefficient of the mixed solvent formed by the monohydroxy alcohol ether solvent, the dihydroxy alcohol ether solvent and the amide solvent, the photoresist stripping liquid composition has good photoresist dissolving capacity and washing performance, the service life of the photoresist stripping liquid is prolonged, meanwhile, the photoresist after-tack phenomenon is avoided, and the photoresist stripping liquid composition is suitable for being used in the field of photoresist stripping. And the yield of the material manufacturing process is improved.

Developer compositions are described based on blends of solvents, in which the developers are particularly effective for EUV patterning using organometallic based patterning compositions. Methods for use of these developing compositions are described. The blends of solvents can be selected based on Hansen solubility parameters. Generally, one solvent has low polarity as express by the sum of δP+δH, and a second solvent component of the developer has a higher value of δP+δH. Corresponding solvent compositions are described.

The present invention relates to new salt forms of sabcomeline. The new salt forms are lipophilic acid salts of sabcomeline wherein the lipophilic acids used to prepare the new salts may have a Hansen solubility parameter distance from water of at least 20.7. The present invention also relates to new crystalline forms of sabocomeline salts.

(Meth)acrylate-functionalized oligomers having a) an oligomeric backbone comprised of first segments and second segments and b) (meth)acrylate-functionalized end groups are provided. Such oligomers are useful as components of curable compositions. The first segments, second segments and (meth)acrylate-functionalized end groups are linked together by linking moieties derived from a polyisocyanate. The first segments are residues of a first segment precursor containing a plurality of repeating units and a plurality of isocyanate-reactive functional groups and having a number average molecular weight of at least 250 daltons. The second segments are residues of a second segment precursor, different from the first segment precursor, containing a plurality of repeating units and a plurality of isocyanate-reactive functional groups and having a number average molecular weight of at least 250 daltons. The first segment and the second segment exhibit a Hansen Solubility Parameter Distance Relative Energy Difference of at least about 4 and not more than about 9.

The invention belongs to the field of nano materials, and particularly relates to an indium selenide nanosheet compound as well as a preparation method and application thereof. The preparation method provided by the invention comprises the following steps: mixing indium selenide nanosheets and silver ions in a second solvent, so that silver nanoparticles grow on the surfaces of the indium selenide nanosheets; the second solvent is a polar solvent, the Hansen solubility parameter delta of the third solvent is greater than or equal to 18MPa < 1 / 2 >, and the mass ratio of the indium selenide nanosheets to the silver ions is (5-50): 1. And growing silver nano-silver particles on the surface of indium selenide by utilizing a spontaneous oxidation-reduction reaction of indium selenide and silver nitrate, so as to prepare the indium selenide nanosheet compound with the surface modified by the silver nano-silver particles. The silver nanoparticles have strong absorption, and the photoelectric response effect of the indium selenide nanosheet is remarkably improved by compounding the silver nanoparticles and the indium selenide nanosheet.

This invention employs a washing solution containing solvents and metal removal agents. The washing solution contains two or more solvents, the distance between the Hansen solubility parameter of the washing solution and the Hansen solubility parameter of dimethylacetamide (HSP distance) is less than 1.0, and the content of metal impurities is 0.1 × 10⁻¹¹ parts by mass relative to the total of 100 parts by mass of the aforementioned solvents and metal removal agents. ‑9 10 or more by weight 2 ×10 ‑6 The amount is less than a certain percentage by weight. The washing solution described herein can improve the removal of impurities and dirt.

Provided is a means that, in temporary fixing applications in a process for manufacturing an electronic device, enables a sufficient amount of a UV absorber to be blended on the basis of long-term usability, and enables the suppression of heat generation associated with light irradiation. The present invention relates to a photocurable composition comprising (A) a first (meth) acrylate monomer comprising at least a monofunctional (meth) acrylate monomer, (B) a photoradical polymerization initiator, and (C) a UV absorber, the composition being characterized in that component (A) comprises (A-1) a monofunctional (meth) acrylate monomer and (A-2) a polyfunctional (meth) acrylate monomer; the absolute value of the difference between the delta P of the component (A) and the delta P of the component (C) is 5 or less with respect to a polarity term delta P at 25 DEG C in Hansen solubility parameters calculated by converting and introducing a molecular structural formula by an SMILES labeling method in HSPiP (Hansen Solubility Parameters in Practice) software, and the delta D of the component (A) is 16-20 with respect to a dispersion term delta D at 25 DEG C in Hansen solubility parameters.

Layered polymer materials include a first layer including a first cyclic olefin polymer or a first cyclic olefin copolymer, a third layer including a second cyclic olefin polymer or a second cyclic olefin copolymer, and a second layer including an amphiphilic polymer having a hydrophilic component with a Hansen Solubility Parameter distance of 8 MPa1 / 2 or greater from oxygen gas, while at the same time having a hydrophobic component with a Hansen Solubility Parameter distance of 8 MPa1 / 2 or less from COC or COP. The second layer can be in contact with and be between the first layer and the third layer. The layered polymer material can be used to construct the body of a vial or a syringe. Methods of making the layered polymer material and kits containing the layered polymer material or containers having a body constructed from the layered polymer material are also described.

An emulsion polymer comprising: (a) structural units of a specific polymerizable surfactant, (b) structural units of an ethylenically unsaturated anionic monomer, and (c) structural units of an ethylenically unsaturated nonionic monomer; wherein polymer segments of the emulsion polymer that comprise structural units of the ethylenically unsaturated anionic monomer and structural units of the ethylenically unsaturated nonionic monomer together have specific Hansen solubility parameters. An aqueous coating composition comprising such emulsion polymer provides good early water blister resistance.

The present invention provides a laminate capable of sufficiently suppressing foreign matter when a substrate is peeled off. This laminate includes a substrate and a resin composition layer formed on the substrate. The resin composition layer contains inorganic particles, an epoxy resin, and a silane coupling agent, and has a thickness of 0.10 mm to 1.00 mm. The percentage of the inorganic particles with respect to the solid content of the resin composition layer is 50 mass% to 99 mass%. The cumulative 50% particle diameter D50 of the inorganic particles is 10 μm or less from the fine grain side of a cumulative particle size distribution based on volume. The silane couple agent is such that the polarity term of the Hansen solubility parameter is 2 to 10.

According to the present invention, it is possible to provide a composition for removing a photoresist for forming a copper-containing pattern after the formation of the pattern, the composition comprising: an alkaline agent comprising at least one selected from the group consisting of an alkanolamine, a quaternary ammonium hydroxide, and an inorganic base; an organic solvent in which the Hansen solubility parameter coordinates fall within the range of a sphere having a radius of 3.60 MPa 0.5 or less centered on [Delta] d = 16.0, [Delta] p = 8.7, and [Delta] h = 15.5; and an azole compound.

The invention relates to a sheet for sintering and bonding, a composition, a varnish, and a dicing tape with the sheet for sintering and bonding. Provided is a sheet for sintering bonding, which is not susceptible to the occurrence of particle unevenness in the sheet, cracks during processing, and defects. A sheet for sintering bonding, which contains a binder and sinterable particles containing a conductive metal, and which is characterized in that the distance (Db) between the Hansen solubility parameter of the sinterable particles and the Hansen solubility parameter of the binder is less than 15.0.

A method for forming a semiconductor device can include coating a reversible overcoat layer over first mandrels on a substrate, inducing a crosslinking reaction within the reversible overcoat layer that renders the reversible overcoat layer insoluble to a developer and forms a crosslinked overcoat layer, diffusing acid particles from the first mandrels into first portions of the crosslinked overcoat layer, inducing a de-crosslinking reaction within the first portions of the crosslinked overcoat layer to form de-crosslinked regions, where unmodified regions of the crosslinked overcoat layer form second mandrels, and selectively removing the de-crosslinked regions with the developer such that the first mandrels and the second mandrels form a mandrel pattern over the substrate, where the developer has a solubility distance in a range of zero to seven in a Hansen Solubility Parameter space relative to methyl isobutyl carbinol.

To provide a photoresist stripping solution having excellent storage stability while maintaining sufficient resist detachability.SOLUTION: The photoresist stripping solution contains a quaternary ammonium hydroxide (A), water (B), and an organic solvent (C). The organic solvent (C) is a mixture of the following organic solvents (C1), (C2) and (C3): an organic solvent (C1) having a polarity term (dP) of Hansen solubility parameters of 15.0 or more and less than 21.0 and a hydrogen bond term (dH) thereof of 6.0 or more and less than 14.0; an organic solvent (C2) having a polarity term (dP) of Hansen solubility parameters of 3.0 or more and less than 14.0 and a hydrogen bond term (dH) thereof of 8.0 or more and less than 31.0; and an organic solvent (C3) having a polarity term (dP) of Hansen solubility parameters of 3.0 or more and less than 8.0 and a hydrogen bond term (dH) thereof of 2.5 or more and less than 8.0.SELECTED DRAWING: None

An ultrasound phantom comprising: water; agar; a thickening polysaccharide; and a water-retention auxiliary agent, wherein when a first phase transition point is defined as a temperature at which an aqueous dispersion liquid of the agar is solated by temperature raising and becomes a solated aqueous solution of the agar, and a second phase transition point is defined as a temperature at which the solated aqueous solution of the agar is gelated by temperature lowering, the thickening polysaccharide does not have a phase transition point at which an aqueous solution of the thickening polysaccharide is gelated by temperature lowering in a temperature range from the second phase transition point to the first phase transition point, and a polar term δP of Hansen solubility parameters of the water-retention auxiliary agent is 13.0 MPa0.5 or more.

A process for removing 1, 2-pentanediol from a mixture rich in ethylene glycol, said process comprising an extractive distillation in which an entrainer having a Hansen solubility parameter [delta] H of between 5 and 15 is used, and said entrainer has a boiling point at atmospheric pressure of at least 200 DEG C.

According to the invention, a cleaning solution containing a solvent and a metal remover is adopted. The cleaning solution contains two or more solvents, and the distance (HSP distance) between the Hansen solubility parameter of the cleaning solution and the Hansen solubility parameter of dimethylacetamide is 1.0 or less. The total content of an organic substance selected from the group consisting of an organic acid polymer, an organic acid ester, and a ketone body is from 0.1 * 10 <-9 > parts by mass to 105 * 10 <-6 > parts by mass (inclusive) per 100 parts by mass of the total of the solvent and the metal remover. According to the washing liquid, the removal performance of organic impurity dirt can be improved.

Provided is a method for producing phenols that can be used in the production of phenols from biomass, said method comprising a step for culturing, in a liquid mixture of a culture solution and an organic solvent, a microorganism having the ability to produce phenols, wherein the Hansen solubility parameter (HSP) distance between the organic solvent and water is not less than 38.0, and the HSP distance between the organic solvent and phenol is not more than 14.0.

The present invention addresses the problem of providing: a near-infrared-absorbing composition which has excellent storage stability and is capable of forming a cured film having excellent wet heat resistance; and a near-infrared-absorbing cured film and an optical member which use the near-infrared-absorbing composition. A near-infrared absorbing composition according to the present invention contains the following components (A) to (E). Component (A): a copper complex in which a compound having a structure represented by general formula (I) is coordinated. Component (B): a compound having a structure represented by general formula (II). Component (C): a compound having a structure represented by general formula (III) or (IV). Component (D): a compound having a structure represented by general formula (V). Component (E): a solvent in which the value of the polarity term [delta] P of the Hansen solubility parameter is within the range of 3-6 and the value of the hydrogen bond term [delta] H is within the range of 3-6.

Provided are an active energy ray-curable composition, a cured coating film, and a thin film which are coated on the surface of a substrate and cured to impart antistatic properties, and which have transparency and light transmittance to a degree that can be used in optical applications, and which have scratch resistance and bending resistance. The composition contains components (A) to (D), the content of component (C) is 4 parts by mass or less relative to 100 parts by mass of the resin solid content in the composition, and 10% by mass or more of a resin component having a hydroxyl value of 60 mgKOH / g or more is not contained relative to 100% by mass of the resin solid content in the composition. Component (A): a photoinitiator containing a water-soluble photoinitiator (a1); component (B): a polyfunctional (meth) acrylate containing an oxyalkylene chain-containing compound (b1). Component (C): conductive polymer microparticles; component (D): an organic solvent containing a solvent (d1) having a boiling point of 130 DEG C or higher and a Hansen solubility parameter [delta] H12.0 or higher.

Provided is a solvent composition for an electrode-forming paste, the solvent composition having excellent crack resistance during manufacture of an electrode and being capable of reducing the solvent residue in the electrode.　The solvent composition for an electrode-forming paste comprises a solvent (A) having a boiling point of 180°C to 240°C, and has a Hansen solubility parameter hydrogen bond term δH of 4-11 (J / cm3) 0.5. The solvent (A) preferably has a solubility in water of 5 g / 100 g or more. The solvent (A) preferably comprises an ether skeleton and / or an ester skeleton.

Provided are a carrier, a conductive paste, an electronic component, and a multilayer ceramic capacitor, which are capable of maintaining the smoothness and the density of a dried film of the conductive paste in a good state while suppressing sheet erosion of a green sheet, in a conductive paste using a fine conductive powder and a ceramic powder for miniaturization and thinning of a multilayer ceramic electronic component. A carrier is a carrier containing a binder resin and an organic solvent, wherein the binder resin contains a high molecular compound in which a cellulose-based compound and a polyvinyl acetal-based compound are bonded via a sulfur atom, the molar ratio of the sulfur atom contained in the high molecular compound to the cellulose-based compound is 0.3 to 1.7, and the hydrogen bond term δh of the Hansen solubility parameter of the organic solvent is 6.5 MPa0.5 or less.

To provide industrially useful fullerene derivative solutions, etc. [Solution] The fullerene derivative solution comprises a fullerene derivative, one or more first solvents, and one or more second solvents, wherein the boiling point of the first solvent is 200°C or lower. The boiling point of the second solvent is 100°C or lower. Among the Hansen solubility parameters of the first solvent, when the dispersion force term is δD1, the polarity term is δP1, and the hydrogen bonding term is δH1, the following conditions are satisfied: 17.8 ≤ δD1 ≤ 18.9, 4.4 ≤ δP1 ≤ 4.7, and 4.8 ≤ δH1 ≤ 6.9. The volume ratio of one or more first solvents to the total volume of one or more first solvents and one or more second solvents is greater than the volume ratio of one or more second solvents to the total volume.

The present invention is a method for manufacturing a treated substrate having a surface of which at least a partial region is modified, the method comprising: a step for exposing the surface of a substrate (10) to a surface modifier containing a compound (A) (20) having binding properties with respect to the substrate (10); and a step for cleaning the exposed substrate (10) with a cleaning solution to obtain a treated substrate (100) in which a film is formed by controlling the compound (A) (20) in the plane direction and the height direction of the substrate (10). The method is characterized in that a cleaning solution in which the distance (Ra) between the Hansen solubility parameter of the compound (A) (20) and the Hansen solubility parameter of the cleaning solution satisfies the relationship (Ra) 2 < = 128 is selected.

Production chemicals and methods of selecting the production chemicals based on Hansen Solubility Parameters (HSP) are disclosed. The production chemicals selected by the methods mitigate or reduce one or more issues or problems associated with oil and gas productions and transportations. The methods measure HSP values for the production chemicals and / or crude oil and select at least one production chemical for at least one application on the crude oil based on the HSP values of the production chemicals and the crude oil.

To provide a water-based ink for inkjet printing excellent in substrate adhesion, wet spreadability and printing density of the ink to a low liquid absorbing printing substrate.SOLUTION: A water-based ink for ink-jet printing on a low-liquid absorbing printing substrate, which comprises a pigment, an organic solvent (A), an organic solvent (B) and water, wherein the organic solvent (A) is a glycol ether having an octanol-water partition coefficient logP of at least 0.75, the organic solvent (B) is a glycol ether or alkylene glycol having an octanol-water partition coefficient logP of less than 0.75, and a distance Ra between Hansen solubility parameters (HSP) of the organic solvent (A) and the organic solvent (B) is not more than 5.5, A mass ratio (A) / (B) of the organic solvent (A) to the organic solvent (B) is not less than 0.4 and not more than 2.5.SELECTED DRAWING: None

A thermally conductive composition according to the present invention contains an organic polymer having a hydrolyzable silyl group, a non-reactive component, and a thermally conductive filler. The thermally conductive filler contains aluminum oxide. The content of the aluminum oxide is 10 vol% or more of the total volume of the thermally conductive composition. The surface area of the aluminum oxide with respect to 1 g of the thermally conductive composition is 0.07 m2 or less. The sum of X represented by formula (1) calculated on the basis of the polarity term δP of the Hansen solubility parameter of the non-reactive component is 1.5 or less.　The present invention makes it possible to provide a thermally conductive composition that contains an organic polymer having a hydrolyzable silyl group and that has excellent heat dissipation properties and a low dielectric constant. Formula (1): X=polarity term δP of Hansen solubility parameter of non-reactive component × volume of non-reactive component contained in thermally conductive composition / volume of liquid contained in thermally conductive composition

A developer composition for a metal-containing photoresist and a pattern forming method including a developing method utilizing the developer composition are disclosed. For the coordinate x, as specified by the Hansen solubility parameters (δd, δp, and δh) of the developer composition, a solubility radius Ra with a coordinate a as a center value and a solubility radius Rb with a coordinate b as a center value may be calculated, and a distance (x a) between the coordinate x and the coordinate a and a distance (x b) between the coordinate x and the coordinate b, calculated by Equations 1 and 2, respectively, may have the relationships x a<Ra and x b>Rb.x⁢ a2_=4⁢(δ⁢dx-δ⁢da)2+(δ⁢px-δ⁢pa)2+(δ⁢hx-δ⁢ha)2Equation⁢ 1x⁢ b2_=4⁢(δ⁢dx-δ⁢db)2+(δ⁢px-δ⁢pb)2+(δ⁢hx-δ⁢hb)2Equation⁢ 2

Provided are a semiconductor substrate cleaning method and the like that make it possible to use a cleaning composition to remove (clean) an adhesive residue from the surface of a semiconductor substrate that includes an electrode without damaging the electrode.　A semiconductor substrate cleaning method according to the present invention includes a step for using a cleaning composition to clean a semiconductor substrate that includes an electrode. The value of the polarity parameter (δp) of the Hansen solubility parameters (HSP) of the cleaning composition is less than 9.9 MPa0.5.

A photoresist developer includes a solvent having Hansen solubility parameters of 15<δd<25, 10<δp<25, and 6<δp<30; an acid having an acid dissociation constant, pKa, of −15<pKa<4, or a base having a pKa of 40>pKa>9.5; and a chelate.