82 results about "Dicing tape" patented technology

The present invention provides an adhesive composition for a dicing tape, which may prevent the success rate of chip pick-up from decreasing due to an oxygen inhibition phenomenon occurring in a dicing process, and a dicing tape including the same. The adhesive composition for a dicing tape includes an adhesive binder, a reducing agent, and a photoinitiator.

A tape affixing system capable of automatically switching or replacing a dicing tape. A tape affixing system 1 includes a stocker 5 that stores tape magazines 4 each accommodating a dicing tape DT wound in a roll shape, an affixing apparatus 3 which includes movable guide rollers 32a and 32b, fixed guide rollers 33a and 33b, and a knife plate 35 that regulate a reel-out region R of the dicing tape DT to a predetermined track, on which each of the tape magazines 4 is replaceably mountable, and which affixes the dicing tape DT to a dicing frame DT and a workpiece W, and a first conveyance robot 6 that delivers the tape magazine 4 between the stocker 5 and the affixing apparatus 3.

A manufacturing apparatus (10) for a semiconductor device is provided with: a chip holder (12) for holding a dicing tape (110), to which a plurality of chips (100) are attached, in a posture in which the plurality of chips (100) face downward in a gravity direction; and a pickup tool (20) for picking up, in a non-contact manner, a target chip (100a), which is one of the plurality of chips (100), from a lower side of the chip holder (12).

To provide a technique capable of facilitating management of a wafer.SOLUTION: A semiconductor manufacturing apparatus includes a cassette mounting table on which a wafer cassette accommodating a wafer ring is mounted, a wafer holding table that holds the wafer ring, a head that picks up a die from a dicing tape to which a wafer attached to the wafer ring and divided into the die is attached, a UV irradiator, and a control device that is configured to irradiate the dicing tape with UV by the UV irradiator and can perform bidirectional communication of UV irradiation information associated with an ID of the wafer cassette with a host computer.SELECTED DRAWING: Figure 7

A method for manufacturing a semiconductor chip (20A) with a resin layer includes: a step for preparing a laminate (20) including a semiconductor substrate (21) and a resin layer (23) laminated on the semiconductor substrate; a step in which the laminate is bonded to a dicing tape (42) such that the resin layer is exposed; a step for forming a protective layer (33) on the resin layer of the laminate; a step for forming a groove (34) penetrating the protective layer and the resin layer by laser ablation; a step for singulating the semiconductor substrate through the groove; and a step for removing the cut protective layer (33A).

A method of dicing a semiconductor wafer comprises steps of a) positioning a stencil mask over the semiconductor wafer, with the stencil mask being spaced from the semiconductor wafer by a gap such that the stencil mask does not touch a component arranged on the semiconductor wafer, the stencil mask having an aperture; and b) subsequently etching through the semiconductor wafer by performing a reactive ion etch, wherein the stencil mask controls the etch. The method may allow a wafer to be diced without the use of die attach tape and without need for a cleaning step, and may be useful for dicing wafers bearing microelectromechanical systems. Also provided are a stencil mask and system useful in the method.

A wafer cutting method includes forming a plurality of grooves by scanning a laser beam onto a front surface of a wafer, wherein the wafer comprises a plurality of layers, and the laser beam comprises at least two lights; polishing a rear surface of the wafer, mounting the wafer on a dicing tape, and cutting the wafer by expanding the dicing tape, wherein the forming the plurality of grooves includes forming at least two grooves by using the at least two lights, the at least two grooves having different widths on at least two layers, among the plurality of layers of the wafer.

According to the embodiment of the present invention, a semiconductor device includes a first nanodevice comprised of a plurality of first transistors and a second nanodevice comprised of a plurality of second transistors. The first nanodevice includes a first source / drain contact. The second nanodevice includes a second source / drain contact. The second nanodevice is located adjacent to and parallel to the first nanodevice. A power bar is located between the first nanodevice and the second nanodevice. The power bar is connected to the second source / drain contact. A top surface of the power bar and the second source / drain contact are substantially in a same plane. The top surface of the power bar and the second source / drain contact are substantially a same height.

The purpose of the present invention is to provide a resin composition that has adequate antistatic properties and that suppresses the inconvenience of an antistatic agent contaminating a metal roll of a film-forming machine during film formation, a resin film of said resin composition, and a base film for an antistatic dicing tape. To achieve this purpose, the present invention is a resin composition that includes 20-99 parts by mass of (A) an ethylene resin, 1-80 parts by mass of (B) a propylene resin, and 1-39 parts by mass of (C) a block copolymer of propylene and a polyhydric alcohol; the sum of the amount of the component (A) ethylene resin blended and the amount of the component (B) propylene resin blended is 100 parts by mass; and the component (B) propylene resin does not include a block copolymer of propylene and a polyhydric alcohol. The mass ratio of the amount of the component (B) propylene resin blended and the amount of the component (C) block copolymer of propylene and a polyhydric alcohol blended is preferably 0.4 or greater.

Embodiments herein are generally directed to ejection assemblies for singulated dies and thinned wafers and methods related thereto. Die ejection assemblies may be used to minimize cracking or deformation of dies during post-singulation processing. Thus, the die ejection assemblies and methods described herein reduce the number of dies rejected after singulation and the number of failures during a die bonding process. In one general aspect, an apparatus for removing singulated dies from a dicing tape is provided. The apparatus may include a die ejector assembly, which may include a vacuum plate configured to engage with a portion of the dicing tape. A die ejector may be disposed in an ejector opening of the vacuum plate. One or more actuators may be configured to move at least a portion of the die ejector in a lateral direction relative to the upper surface of the vacuum plate.

A method of forming an integrated circuit (IC) is provided. The method includes applying a die attach film to a first surface of a wafer opposite a second surface. The method also includes applying a passivation layer to the second surface of the wafer. The method further includes patterning the passivation layer to define a number of scribe lines. The method yet further includes applying a dicing tape having a nonconductive material to the die attach film. The nonconductive material is resistant to plasma etching. The method includes plasma etching the wafer to form dies of a plurality of dies supported by the dicing tape based on the scribe lines.

A method of forming an integrated circuit (IC) is provided. The method includes applying a die attach film (104) to a first surface (106) of a wafer (100) opposite a second surface (108). The method also includes applying a passivation layer (110) to the second surface (108) of the wafer (100). The method further includes patterning the passivation layer (110) to define a number of scribe lines. The method yet further includes applying a dicing tape (102) having a nonconductive material to the die attach film (104). The nonconductive material is resistant to plasma etching. The method includes plasma etching the wafer (100) to form dies of a plurality of dies supported by the dicing tape (102) based on the scribe lines.

A tape affixing apparatus and a tape magazine capable of automatically switching or replacing a dicing tape. An affixing apparatus 3 includes a base section 31 on which a tape magazine 4 accommodating a dicing tape DT wound in a roll shape with a part of the dicing tape DT reeled out is installed to be replaceably mountable, movable guide rollers 32a and 32b, fixed guide rollers 33a and 33b, and a knife plate 35 that are movable to regulate a reel-out region R where the part of the dicing tape DT is reeled out to a predetermined track.

A die pickup module and a die bonding apparatus including the same are disclosed. The die pickup module includes a wafer stage for supporting a wafer including dies attached on a dicing tape, a die separator disposed under the dicing tape and separating a die to be picked up from the dicing tape, a non-contact pickup for picking up the die in a non-contact manner such that a front surface of the die is not contacted, a vertical driving unit moving the non-contact pickup in a vertical direction to pick up the die, and a flip driving unit for flipping the non-contact pickup to flip the die picked up by the non-contact pickup.

To provide an apparatus for manufacturing a semiconductor device capable of appropriately picking up a target chip in a non-contact manner.SOLUTION: A semiconductor-device manufacturing device 10 includes a chip holder 12 for holding a dicing tape 110 to which a plurality of chips 100 are stuck in a posture in which the plurality of chips 100 face downward in a gravity direction, and a pickup tool 20 for picking up a target chip 100a, which is one of the plurality of chips 100, from a lower side of the chip holder 12 in a non-contact manner.SELECTED DRAWING: Figure 1

This invention provides a workpiece splitting device that eliminates the problem of chip quality degradation caused by contact between chips after splitting. [Solution] The workpiece splitting device includes an expand ring 14 for expanding the dicing tape 3, an expansion holding ring 18 formed in a ring shape having an elastically deformable fitting portion 26, which holds the expanded state of the dicing tape 3 by fitting the fitting portion 26 to the surface of the frame 4 when the dicing tape 3 is expanded by the expand ring 14, and a heating unit 28 that heats the fitting portion 26 of the expansion holding ring 18 before the fitting portion 26 of the expansion holding ring 18 is fitted to the surface of the frame 4.

To provide a dicing die bond film or the like capable of maintaining a separation distance (kerf) between adjacent semiconductor chips for a long period of time and exhibiting good pickup properties.SOLUTION: The dicing die-bonding film includes a dicing tape having a base layer and a pressure-sensitive adhesive layer superposed on one surface of the base layer, and a die-bonding sheet superposed on the pressure-sensitive adhesive layer, wherein the dicing tape has a stress relaxation ratio of 65% or more when stretched by 5% and held for 3 minutes, and the pressure-sensitive adhesive layer has an adhesive strength of 0. 30N / 20mm or less with respect to the die-bonding sheet.SELECTED DRAWING: Figure 1

A non-contact semiconductor die singulation process utilizes compressed air to separate a first portion of a semiconductor wafer from a second portion of the semiconductor wafer. During the non-contact semiconductor die singulation process, the semiconductor wafer is placed on dicing tape. A channel is formed along various scribe lines in the semiconductor wafer. When the channels are formed, a compressed air tool applies compressed air along a length of the channel. Pressure from the compressed air causes the semiconductor wafer to deform. As the semiconductor wafer deforms, the semiconductor wafer cracks or splits along the length of the scribe line thereby separating the first portion of the semiconductor wafer from the second portion.

To provide a dicing tape and a dicing bond film which are excellent in cutting properties and pickup properties, in a semiconductor manufacturing process.SOLUTION: A dicing tape 10 is composed of: a base material film 1 having an average value of Young's modulus in an MD direction and an elastic modulus in 5% elongation in a TD direction at 0°C of 165-260 MPa; and an adhesive layer 2 which contains 2.4-7.0 pts.mass of a polyisocyanate crosslinking agent with respect to 100 pts.mass of an acrylic adhesive polymer having an active energy ray reactive carbon-carbon double bond and a hydroxyl value of 12.0-40.5 mgKOH / g, has an equivalent ratio (-NCO / -OH) of the isocyanate group contained in the polyisocyanate-based crosslinking agent to the hydroxyl group contained in the acrylic adhesive polymer of 0.14-1.32, adhesive force to a stainless steel plate at 23°C after irradiation with ultraviolet light in the presence of oxygen of 3.50 N / 25 mm or less, and adhesive force thereto after irradiation with ultraviolet light in the absence of oxygen of 0.25-0.70 N / 25 mm.SELECTED DRAWING: Figure 2

A die bonding apparatus includes a push-up unit, a head having a collet that sucks a die, and a control device. The control device is configured to suck a dicing tape using a dome plate; land the collet onto the die using the head; suck the die using the collet; lift plural blocks from the dome plate; stop the outermost block disposed on the outermost side among the plural blocks from lifting at a height where the die is peeled off from the dicing tape; and lift blocks other than the outermost block among the plural blocks higher than the outermost block to a predefined height.

A non-contact semiconductor die singulation process utilizes compressed air to separate a first portion of a semiconductor wafer from a second portion of the semiconductor wafer. During the non-contact semiconductor die singulation process, the semiconductor wafer is placed on a dicing tape. A channel is formed along various scribe lines in the semiconductor wafer. When the channel is formed, a compressed air tool applies compressed air along the length of the channel. Pressure from the compressed air deforms the semiconductor wafer. When the semiconductor wafer is deformed, the semiconductor wafer breaks or cracks along the length of the scribe line, thereby separating the first portion from the second portion of the semiconductor wafer.

This invention discloses a silicon powder collection and processing device and method for single-crystal silicon wafer cutting, specifically relating to the field of silicon powder collection devices. The device includes a cutting worktable, a cutting machine, and a silicon powder collection box. The silicon powder collection box is connected to one side of the cutting worktable. A first guide plate bent downwards and a second guide plate bent upwards are respectively installed on the top and bottom inner walls of the cutting worktable. A support frame is fixedly connected inside the silicon powder collection box, and a transmission roller is rotatably connected to the inner wall of the support frame. A rotary motor and a suction pump are respectively connected to both ends of the transmission roller. The suction pump is used to suction the silicon powder generated during the cutting of single-crystal silicon wafers within the cutting worktable. A liquid storage tank and a dust storage tank are fixedly connected to the top and bottom of the silicon powder collection box, respectively, ultimately causing the silicon powder on the dust baffle to fall into the dust storage tank. This solves the problem that workers need to disassemble the silicon powder collection device each time to remove the silicon powder and avoids the problem of the silicon powder being ignited by electrical sparks or heat generated during the cutting process.

The invention provides a semiconductor structure and a cutting method thereof, a clearance area is formed in the semiconductor structure, and the clearance area does not comprise metal, so that the clearance area can be modified by adopting an invisible cutting process, and then single chips can be conveniently formed through separation. The invisible cutting process uses infrared laser and has the advantages of small destructiveness and small pollution to a chip, but a cutting channel with metal cannot be cut, and a clearance area is formed in the semiconductor structure, so that the invisible cutting process can be adopted, and an excellent cutting effect can be achieved.

Provided is a wafer processing method capable of sufficiently removing grinding chips attached to a wafer held by a chuck table when performing grinding processing. The wafer processing method includes the following steps: a dicing tape attaching step of attaching a dicing tape to a front surface of a wafer; a heat staking piece arranging step of arranging a heat staking piece on the dicing tape attached to the front surface of the wafer; an integration step of integrating the heat staking piece to the dicing tape by heating the heat staking piece and pressing the heat staking piece with a flat member; a grinding step of holding the heat staking piece side to a chuck table of a grinding device, and grinding to a desired thickness while supplying grinding water to a back surface of the wafer; and a peeling step of moving out the integrated wafer from the chuck table, and peeling the heat staking piece from the dicing tape.

To provide a dicing tape base film made of a polyolefin resin that has no yield point during expansion and exhibits excellent uniform expansion.SOLUTION: A dicing tape base film includes a release layer, a base layer, and a dicing layer in this order, and the release layer is primarily composed of an ethylene-propylene copolymer, the base layer contains a 1-butene polymer, a thermoplastic elastomer, and mineral oil, and the dicing layer contains at least one of an ethylene-propylene copolymer and an olefin-based thermoplastic elastomer.SELECTED DRAWING: None

A sheet for sinter bonding including: a sinterable particle containing an electro-conductive metal; and a binder, wherein a distance Db between a Hansen solubility parameter of the sinterable particle and a Hansen solubility parameter of the binder is less than 15.0.

The present invention relates, as an example, to a hybrid bonding process in a CoW (Chip On Water: Chip-to-Water) process. In this method, the semiconductor wafer (100) is attached to a dicing tape (DCT) such that an insulating film (102) and a terminal electrode (103) of the semiconductor wafer (100) on the singulated side face the dicing tape (DCT). Then, the semiconductor wafer (100) is singulated by dicing in a state in which the surface of the terminal electrode (103) and the like is protected by the dicing tape (DCT). Consequently, foreign matter (dust) generated during singulation in the CoW is prevented from adhering to the surface of the insulating film (102b) or the terminal electrode (103) of the singulated semiconductor chip (10), thereby improving the yield of hybrid bonding. This method can be applied to a case where the insulating film (102) of the semiconductor wafer (100) is an organic material or an insulating material.

Provided is a polyolefin film that, when used as a dicing tape, has exceptional workability in an expanding step and exceptional properties for picking up a semiconductor chip, and furthermore has exceptional uniform stretchability. A polyolefin film that satisfies expressions (1) to (4), where LA1, FA1, and FB1 respectively represent the longitudinal-direction yield point elongation (%), yield point stress (MPa), and stress (MPa) at 300% elongation, and LA2, FA2, and FB2 respectively represent the width-direction yield point elongation (%), yield point stress (MPa), and stress (MPa) at 300% elongation. Expression (1): 0.8 ≤ (FB1 / FA1) ≤ 1.2 Expression (2): 0.8 ≤ (FB2 / FA2) ≤ 1.2 Expression (3): |FA1 − FA2| ≤ 1.0 MPa Expression (4): |LA1 − LA2| ≤ 20%

A cutting device for cutting a band-like material, in particular a tacky cord band, including two blade elements interacting with one another for the cutting, each blade element being arranged on a blade support, which in turn is arranged directly or indirectly on a device framework, wherein at least one oscillation sensor is provided, by way of which oscillation information which is a measure of an oscillation of the blade elements produced by the interaction of the blade elements during a cut can be acquired, and in that a processing device, designed for determining on the basis of the oscillation information wear information indicating the state of one or both blade elements, and also a display device, for outputting wear information determined, are provided.

To provide an ultraviolet irradiation device capable of easily picking up a chip without inclination by selecting an area of ultraviolet irradiation.SOLUTION: An ultraviolet irradiation device (40) provided with a holding table (10) for holding a work set which is obtained by bonding a dicing tape to a ring frame and a work and integrating the ring frame and the work, a bar-shaped ultraviolet irradiation unit (42) in which a plurality of ultraviolet light emitting sections are arranged in a straight line parallel to the upper surface of the holding table (10), and a Y-axis moving mechanism (50) for relatively moving the ultraviolet irradiation unit (42) and the holding table (10) parallel to the upper surface of the holding table (10) is provided with an area setting section (60) for setting an area in which the adhesive strength of the dicing tape is reduced, and a control section (70) for controlling at least the ultraviolet irradiation unit (42) or the Y-axis moving mechanism (50) so that ultraviolet rays are irradiated from the ultraviolet irradiation unit (42) toward the area set by the area setting section (60).SELECTED DRAWING: Figure 3