12 results about "Dicing tape" patented technology

A method of dicing a semiconductor wafer comprises steps of a) positioning a stencil mask over the semiconductor wafer, with the stencil mask being spaced from the semiconductor wafer by a gap such that the stencil mask does not touch a component arranged on the semiconductor wafer, the stencil mask having an aperture; and b) subsequently etching through the semiconductor wafer by performing a reactive ion etch, wherein the stencil mask controls the etch. The method may allow a wafer to be diced without the use of die attach tape and without need for a cleaning step, and may be useful for dicing wafers bearing microelectromechanical systems. Also provided are a stencil mask and system useful in the method.

This invention provides a workpiece splitting device that eliminates the problem of chip quality degradation caused by contact between chips after splitting. [Solution] The workpiece splitting device includes an expand ring 14 for expanding the dicing tape 3, an expansion holding ring 18 formed in a ring shape having an elastically deformable fitting portion 26, which holds the expanded state of the dicing tape 3 by fitting the fitting portion 26 to the surface of the frame 4 when the dicing tape 3 is expanded by the expand ring 14, and a heating unit 28 that heats the fitting portion 26 of the expansion holding ring 18 before the fitting portion 26 of the expansion holding ring 18 is fitted to the surface of the frame 4.

The invention provides a semiconductor structure and a cutting method thereof, a clearance area is formed in the semiconductor structure, and the clearance area does not comprise metal, so that the clearance area can be modified by adopting an invisible cutting process, and then single chips can be conveniently formed through separation. The invisible cutting process uses infrared laser and has the advantages of small destructiveness and small pollution to a chip, but a cutting channel with metal cannot be cut, and a clearance area is formed in the semiconductor structure, so that the invisible cutting process can be adopted, and an excellent cutting effect can be achieved.

A sheet for sinter bonding including: a sinterable particle containing an electro-conductive metal; and a binder, wherein a distance Db between a Hansen solubility parameter of the sinterable particle and a Hansen solubility parameter of the binder is less than 15.0.

In this field, there is a need to improve the performance of light-irradiation peelable dicing tapes. [Solution] This disclosure provides an adhesive tape comprising a substrate and an adhesive composition disposed on the substrate. The adhesive composition comprises an acrylic resin, a crosslinking agent, and a Norish type I photoinitiator. After curing by irradiation with ultraviolet light at a wavelength of 365 nm, approximately 36 mm 3 An adhesive composition having the specified volume yields a fragment content of less than 10 ppm of Norish type I photoinitiator when measured by gas chromatography-mass spectrometry (GC-MS) in a 20 mL sealed space under standard conditions.

The present application provides a kind of to further reduce the technology of stress applied to bare chip.The chip mounting device has push unit, the head with chuck that adsorbs bare chip, and control part.The control part is configured to use dome plate to adsorb cutting tape, using the head to land the chuck to the bare chip, using the chuck to adsorb the bare chip, from the dome plate, multiple blocks are raised, the outermost peripheral block in the multiple blocks is stopped rising at the height that the bare chip is peeled from the cutting tape, and the blocks outside the outermost peripheral block in the multiple blocks are further raised to a specified height.

A method of dicing a semiconductor wafer comprises steps of a) positioning a stencil mask over the semiconductor wafer, with the stencil mask being spaced from the semiconductor wafer by a gap such that the stencil mask does not touch a component arranged on the semiconductor wafer, the stencil mask having an aperture; and b) subsequently etching through the semiconductor wafer by performing a reactive ion etch, wherein the stencil mask controls the etch. The method may allow a wafer to be diced without the use of die attach tape and without need for a cleaning step, and may be useful for dicing wafers bearing microelectromechanical systems. Also provided are a stencil mask and system useful in the method.

The present invention provides a sintered bonding sheet, composition, and varnish that are less prone to particle irregularities, cracks, and chipping during processing, as well as a dicing tape with a sintered bonding sheet. [Solution] A dicing tape 1 with a sintered bonding sheet comprises a dicing tape 20 having a base material 21 and an adhesive 22, and including a sintered bonding sheet 10 attached to the adhesive 22, wherein the sintered bonding sheet 10 includes sinterable particles containing a conductive metal and a binder, and the distance Db between the Hansen solubility parameter of the sinterable particles and the Hansen solubility parameter of the binder is less than 15.0.

The present invention provides a sheet for semiconductor device manufacturing that suppresses the occurrence of winding marks (transfer marks) on the adhesive film when it is wound. [Solution] The semiconductor device manufacturing sheet 100 comprises a strip-shaped release liner 3, adhesive films with dicing tape 1 arranged in a row on one side of the release liner, and an outer film 4 positioned on one side of the release liner at a distance from the outer edge of the adhesive films with dicing tape. The dicing tape 20 is positioned to cover the adhesive film 10. The outer film has a first outer film 41 and a second outer film 42 spaced apart from each other in the width direction of the release liner. The first outer film and the second outer film have protrusions T that project inward in the width direction between adjacent adhesive films with dicing tape in the longitudinal direction, and the distance A between the ends of the protrusions facing each other is 145 mm or less.

A brush box cleaning module is introduced as part of the pretreatment process flow within the integrated hybrid bonding platform. The brush box cleaning module addresses the challenge of achieving high cleanliness levels on the front and back surfaces of the die, particularly the technical challenge of achieving high cleanliness levels on the front and back surfaces of the die by removing residues and particles induced by the back surface grinding tape and dicing tape. The brush box cleaning module efficiently removes stubborn residues and particles through both chemical and mechanical removal, resulting in a clean, passivated surface without causing watermarks, scratches, corrosion, or surface roughness. This disclosed method enhances bonding yield and offers significant advantages over existing methods in die-stack hybrid bonding applications.

The semiconductor wafer dicing method includes: a preparation step, preparing a laminate on the main surface of the semiconductor wafer with an adhesive layer and a back polishing tape on the adhesive layer; a dicing tape arrangement step, arranging a dicing tape on the back polishing tape of the laminate; and a dicing step, dicing the semiconductor wafer arranged on the back polishing tape to monolithize it into multiple semiconductor chips. In the dicing step, the laminate is cut from the semiconductor wafer side into the area between the adhesive layer and the dicing tape.