29results about How to "Improve bond reliability" patented technology

The purpose of the present invention is to provide a novel alloy-coated Cu bonding wire which has a good FAB shape, has good initial bonding properties of a second bonding part, which is represented by adhesion of the second bonding part, and has good bonding reliability of the second bonding part by suppressing electrochemical corrosion in a high-temperature environment. The alloy-coated Cu bonding wire is characterized by comprising a core material comprising Cu or a Cu alloy, and a coating layer formed on the surface of the core material and having a total concentration of Pd and Ni of 90 at% or more, the thickness of the coating layer is 10 nm or more and 130 nm or less in a concentration distribution in the depth direction of a line measured by Auger electron spectroscopy (AES) such that the depth-direction measurement points are 50 or more in the coating layer. When the average value of the ratio CPd / CNi of the Pd concentration CPd (atomic%) to the Ni concentration CNi (atomic%) for all measurement points of the coating layer is defined as X, the average value X is 0.1-35.0, the total number of measurement points in the coating layer having an absolute deviation of 0.3 X or less from the average value X is 50% or more relative to the total number of measurement points of the coating layer, and the following condition (A) is satisfied, where X represents the average value of the ratio CPd / CNi of the Pd concentration CPd (atomic%) to the Ni concentration CNi (atomic%), and X represents the average value of the ratio CPd / CNi of the Pd concentration CPd (atomic%) to the Ni concentration CNi (atomic%). (A) contains one or more elements selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Zn, Zr, Nb, Mo, Ru, Rh, Sn, Ta, W, Os, Ir, Pt, Au, and Bi (hereinafter referred to as a "first additive element"). ) The total concentration of the first additive element with respect to the entire wire is from 5 ppm by mass to 450 ppm by mass (inclusive).

A ground structure of a USB board end connector and the board end connector, wherein the ground structure comprises a shielding shell of the USB board end connector and a ground terminal arranged on the shielding shell, a lug directly extended from the shielding shell is arranged on the rear side of the shielding shell, the lug comprises an extension section and an inward bending section, one end of the extension section is connected with the shielding shell, the other end of the extension section is connected with one end of the inward bending section through a first circular arc section; a terminal lug extending outward is arranged on one side of the ground terminal, the lower part of the terminal lug is cut off, and the cut-off part is bent backward to form a stop lug; the inward bending section abuts against the terminal lug and is tightly contacted with the stop lug. The application has the advantage that the ground of the ground terminal is very reliable.

This invention provides an alloy powder capable of forming a bonding layer that meets environmental limitations, operates at high temperatures, and exhibits excellent bonding reliability. The alloy powder of this invention has an AgSi eutectic structure, and when selecting one particle from an image obtained by photographing a particle profile using SEM at a magnification of 2000 to 50000x, and performing the following method on any of its ten adjacent particles, the proportion of the aforementioned AgSi eutectic structure in at least eight of them is 10% or more. The method includes: measuring the total outer perimeter of the particle, and the length of the outer perimeter containing the eutectic structure in a region of 0.2 μm from the outer perimeter towards the center of the particle, excluding regions completely devoid of eutectic structure, and calculating the proportion relative to the total outer perimeter as the proportion of the aforementioned AgSi structure on the particle surface.

This utility model relates to the field of building decoration materials technology, specifically to a crack-resistant splicing structure for lightweight partition boards. The crack-resistant splicing structure for lightweight partition boards provided by this utility model includes a first wall panel and a second wall panel. The upper end of the splicing end face of the first wall panel is provided with a protruding male tenon, and the upper end of the splicing end face of the second wall panel is provided with a grooved female tenon matching the male tenon. Simultaneously, the lower end of the splicing end face of the first wall panel is provided with the same female tenon as the second wall panel, and the lower end of the splicing end face of the second wall panel is provided with the same male tenon as the first wall panel. The front end of the male tenon is slidably connected to an insert tenon via a guide groove, and the lower inner side of the female tenon is provided with a positioning groove matching the shape of the insert tenon. An elastic crack-resistant layer is embedded on both sides of the male tenon, protruding 0.5-2mm from the surface of the male tenon. The female tenon is located above the positioning groove and has a limiting insertion hole matching the positioning groove, through which a positioning pin is inserted.

The invention provides a method and device for casting a metallized ceramic matrix and the metallized ceramic matrix, and relates to the field of electronic ceramic surface metallization. The method comprises the following steps: pre-punching ceramic substrates, carrying out surface treatment, and fixing a plurality of ceramic substrates in a mold cavity; then pressing the liquid metal into a mold cavity provided with the ceramic matrix through pressure, and cooling the mold cavity and an internal contained object to room temperature under the protection atmosphere of inert gas; and finally, after the mold is removed, the required multi-layer interconnected metallized ceramic matrix can be prepared. Compared with the prior art, the process is simple and convenient, the multiple layers of ceramic matrixes and the metal layers are integrally cast through the casting technology, interconnection of any layers of the multiple layers of ceramic matrixes is achieved by pressing in the liquid metal, and the metallized ceramic matrixes of any three-dimensional structure which are interconnected in a three-dimensional mode are obtained through the liquid metal.

A thermoelectric conversion module (10) includes: a plurality of thermoelectric conversion elements (11) that stand at distances from each other; a first electrode portion (25) disposed at a first end of the thermoelectric conversion elements (11) in a standing direction; and a second electrode portion (35) disposed at a second end in the standing direction, in which the plurality of thermoelectric conversion elements (11) are electrically connected to each other via the first electrode portion (25) and the second electrode portion (35), a first insulating circuit substrate (20) including: a first insulating layer (21) made of ceramic; and the first electrode portion (25) made of a silver sintered body is disposed at the first end, and a second insulating circuit substrate (30) including: a second insulating layer (31) made of ceramic or a resin; a buffering layer (34) made of aluminum or copper; and the second electrode portion (35) is disposed at the second end.

To provide a novel Cu bonding wire that achieves a favorable FAB shape and a favorable bondability of the 2nd bonded part, and further achieves favorable bond reliability even in a rigorous high-temperature environment. The bonding wire for semiconductor devices includes: a core material of Cu or Cu alloy; and a coating layer containing conductive metal other than Cu formed on a surface of the core material, wherein the coating layer has a region containing Ni as a main component on a core material side, and has a region containing Au and Ni on a wire surface side, in a thickness direction of the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, a ratio CAu / CNi of a concentration CAu (mass%) of Au to a concentration CNi (mass%) of Ni relative to the entire wire is 0.02 or more and 0.7 or less, a concentration of Au at the surface of the wire is 10 atomic% or more and 90 atomic% or less, and at least one of the following conditions (i) and (ii) is satisfied: (i) a concentration of In relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less (ii) a concentration of Ag relative to the entire wire is 1 ppm by mass or more and 500 ppm by mass or less.

To provide a novel Cu bonding wire that achieves a favorable FAB shape and a favorable bondability of the 2nd bonded part, and further achieves favorable bond reliability of the 1st bonded part in a high-temperature environment. The bonding wire for semiconductor devices includes: a core material of Cu or Cu alloy; and a coating layer containing conductive metal other than Cu formed on a surface of the core material, wherein the coating layer has a region containing Ni as a main component on a core material side, and has a region containing Au and Ni on a wire surface side, in a thickness direction of the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, a ratio CAu / CNi of a concentration CAu (mass%) of Au to a concentration CNi (mass%) of Ni relative to the entire wire is 0.02 or more and 0.7 or less, and a concentration of Au at the surface of the wire is 10 atomic% or more and 90 atomic% or less

The application discloses a forming method of a special-shaped structure and relates to the technical field of composite heat-proof layer forming. The method comprises the following steps: preparing a bearing body, a heat protection structure, a sleeving tool and auxiliary materials, horizontally installing the bearing body and the heat protection structure on two sides of a sleeving platform respectively and making special-shaped surfaces face downward, forming a glue layer prefabricated body on a vertical surface of the bearing body, preparing sleeving glue after detecting a gap and interference in the sleeving test, preparing the sleeving glue and brushing the glue on bonding surfaces in different regions, pushing the heat protection structure into the bearing body to form an assembly, and obtaining the special-shaped structure after solidification, cleaning of accumulated glue and demolding.

The application discloses a kind of anticorrosive mortar for pipeline and preparation method thereof, belong to building material technical field.The anticorrosive mortar for pipeline, by weight parts, including: by silicate cement 100-200 parts, slag 100-200 parts and gypsum 20-30 parts constitute low-heat micro-expansion cementitious system, high-alumina cement 20-30 parts, mechanism sand 500-600 parts, latex powder 15-20 parts, water reducing agent 0.5-1 part, inorganic antibacterial agent 0.5-3 parts and water 90-110 parts.The application constructs binary cementitious system by utilizing low-heat micro-expansion system and high-alumina cement, utilizes the synergistic reaction of slag, gypsum and cement hydration product, directional generation appropriate ettringite to compensate shrinkage, significantly improves the bonding strength of anticorrosive layer and pipeline base surface, while high-alumina cement hydration produces calcium aluminate hydrate and aluminum hydroxide colloid, endows mortar with excellent acid, alkali and salt corrosion resistance.The process of the application is simple, low in cost and green, and can effectively solve the corrosion failure problem of water supply and drainage pipeline in complex chemical environment.

The invention discloses a light-weight low-expansion connecting ring structure for 3D printing and a manufacturing method, and the structure comprises a glue joint section which is used for being connected with an antenna housing; the base and the glue joint section are integrally formed, and the base is located below the glue joint section and used for being connected with a cabin body; wherein the glue joint section is a hollow conical ring body; the taper of the conical ring body is 2-5 degrees; the wall thickness of the conical ring body is gradually increased from one end far away from the base to one end connected with the base; the base is of an annular skin lattice structure. The skin lattice structure comprises a hollow lattice structure and two layers of skins arranged at the top end and the bottom end of the lattice structure respectively. By changing the production and manufacturing method, material selection and structural design of the connecting ring, the connecting ring with the comprehensive performance of light weight, low expansion, easiness in manufacturing and the like is obtained.

An object of the present invention is to provide a radiation curable pressure-sensitive adhesive sheet with excellent storage stability, which can suppress the progress of curing during storage and maintain excellent level difference absorbability and stress relaxation properties for a long time. A radiation curable pressure-sensitive adhesive sheet 1 of the present invention has a pressure-sensitive adhesive layer 10 that is cured by irradiation with radiation. The pressure-sensitive adhesive layer 10 contains a photopolymerization initiator 11a and a crosslinking agent 11b, and the curing by irradiation with radiation is curing by a reaction between the photopolymerization initiator 11a and the crosslinking agent 11b. In the radiation curable pressure-sensitive adhesive sheet 1 of the present invention, the photopolymerization initiator 11a has a pKa of 5 to 12.7.

An object of the present invention is to provide a radiation curable pressure-sensitive adhesive sheet with excellent storage stability, which can suppress the progress of curing during storage and maintain excellent level difference absorbability and stress relaxation properties for a long time. A radiation curable pressure-sensitive adhesive sheet 1 of the present invention has a pressure-sensitive adhesive layer 10 that is cured by irradiation with radiation. The pressure-sensitive adhesive layer 10 contains a photopolymerization initiator 11a and a crosslinking agent 11b, and the curing by irradiation with radiation is curing by a reaction between the photopolymerization initiator 11a and the crosslinking agent 11b. In the radiation curable pressure-sensitive adhesive sheet 1 of the present invention, when the pressure-sensitive adhesive layer 10 is stored at 50°C for 4 weeks, a rate of change in residual stress (N / cm2) expressed by the following equation is 70% or less. Residualstresschangerate%=residualstressafterstorageat50°Cfor4weeks−initialresidualstress / initialresidualstress×100

The invention provides a reinforcing film (10), a method for manufacturing a device, and a reinforcing method. The reinforcing film (10) is provided with an adhesive layer (2) which is fixedly laminated on one main surface of a film substrate (1). The adhesive layer is formed from a photocurable composition containing an acrylic base polymer having a cross-linked structure, a photocuring agent, and a photopolymerization initiator. The acrylic base polymer has a weight-average molecular weight of 1,500,000 or more. The photocurable composition contains a polyfunctional (meth) acrylate having no urethane bond and a urethane (meth) acrylate as photocuring agents.

The invention provides a reinforcing film (10), a method for manufacturing a device, and a reinforcing method. The reinforcing film (10) is provided with an adhesive layer (2) which is fixedly laminated on one main surface of a film substrate (1). The adhesive layer is formed from a photocurable composition containing an acrylic base polymer having a cross-linked structure, a photocuring agent, and a photopolymerization initiator. The acrylic base polymer contains, as monomer components, one or more monomers selected from the group consisting of hydroxyl group-containing monomers and carboxyl group-containing monomers, and a nitrogen atom-containing monomer. The photocurable composition contains, as photocuring agents, a polyfunctional (meth) acrylate having an oxyalkylene chain but not having a urethane bond, and a urethane (meth) acrylate.

Provided is a novel Cu bonding wire for a semiconductor device, which brings good shape stability of a second bonding portion. This bonding wire for a semiconductor device is provided with a core material comprising Cu or a Cu alloy and a coating layer formed on the surface of the core material and containing a conductive metal other than Cu, and is characterized in that: the average size of crystal grains in the circumferential direction of the wire as obtained by analyzing the surface of the wire by electron backscatter diffraction (EBSD) is 35-140 nm (inclusive); in the concentration distribution in the depth direction of the line measured by Auger electron spectroscopy (AES), the region from the surface to a depth of 10 nm (hereinafter referred to as "region d0-10". ) contains three or more elements selected from the group consisting of Pd, Pt, Au, Ni, and Ag, and satisfies the following concentration conditions (i) and (ii): (i) the average concentration of each element in regions d0-10 is 5 at% or more with respect to at least three elements among the three or more elements contained in the regions d0-10; (ii) The average concentration of each of the three or more elements contained in the regions d0-10 is 80 at% or less with respect to all of the three or more elements contained in the regions d0-10.

The invention relates to a bonding structure, a manufacturing method thereof and a miniature light-emitting diode device, and the manufacturing method of the bonding structure comprises the steps: providing a first substrate which is provided with a first bonding surface, and the first bonding surface is provided with a first bonding groove; providing a second substrate, wherein the second substrate is provided with a second bonding surface; the first bonding surface and the second bonding surface are bonded, the first bonding groove of the first bonding surface and the second bonding surface are sealed to form a hollow sealed cavity, the bonding structure comprising the sealed cavity is obtained, the air pressure in the sealed cavity is smaller than one standard atmospheric pressure, and therefore the novel mixed bonding structure is provided. According to the invention, the defects (such as high process difficulty, high process cost and the like) of the existing hybrid bonding technology can be effectively avoided, and the advantages (such as high bonding reliability and the like) of the existing hybrid bonding technology can be continued.

An object of the present invention is to provide a radiation curable pressure-sensitive adhesive sheet with excellent storage stability, which can suppress the progress of curing during storage and maintain excellent level difference absorbability and stress relaxation properties for a long time. A radiation curable pressure-sensitive adhesive sheet 1 of the present invention has a pressure-sensitive adhesive layer 10 that is cured by irradiation with radiation. The pressure-sensitive adhesive layer 10 contains a photopolymerization initiator 11a and a crosslinking agent 11b, and the curing by irradiation with radiation is curing by a reaction between the photopolymerization initiator 11a and the crosslinking agent 11b. In the radiation curable pressure-sensitive adhesive sheet 1 of the present invention, the pressure-sensitive adhesive layer 10 further contains a hindered amine light stabilizer 11c.

The present invention relates to an adhesive sheet, an optical film with an adhesive, and a method for manufacturing an image display device. The present invention provides a photocurable adhesive sheet that can suppress photocuring caused by light such as fluorescent lamps in a storage environment and has excellent transparency. The adhesive sheet (5) contains: a base polymer having a cross-linked structure, a photopolymerizable multifunctional compound having two or more photopolymerizable functional groups in one molecule, a photopolymerization initiator, and an ultraviolet absorber. The transmittance of the adhesive sheet to light of a wavelength of 420 nm is 85% or more, the transmittance to light of a wavelength of 405 nm is 80% or more, and the transmittance to light of a wavelength of 380 nm is 4% to 25%.

According to the vacuum plating processing technology and method for plastic lamination, the back face of the plastic base material is evenly coated with the semitransparent primer, the adhesive force and binding force between a vacuum plating layer and the base material are enhanced, it is guaranteed that the plating layer is not prone to falling off or blistering in long-term use, and the service life of the plating layer is prolonged. Chrome plating layer colored paint or aluminum plating layer colored paint used in the vacuum plating process is light-proof black paint, the light leakage phenomenon is effectively prevented, the semitransparent primer layer is arranged between the vacuum plating layer and the plastic base material and used for enhancing the adhesive force and binding force between the vacuum plating layer and the base material, the high-temperature and high-humidity environment is resisted, and the service life of the vacuum plating layer is prolonged. The back protective paint is added on the back, so that the bonding reliability after gluing is improved, the impression of the glue layer caused by a high-temperature and high-humidity environment is eliminated, and the problem that in the prior art, after a part is bonded on the surface of an electronic part, the glue trace is displayed and cannot be eliminated due to long time or high-temperature exposure of a vehicle is solved.

The utility model relates to chip processing field, specifically disclose a material guiding unit and chip bonding device for chip bonding, the material guiding unit among them includes material guiding frame and drive mechanism, the material guiding frame is set up and is opened to material guiding groove, the material guiding groove one end open setting forms material guiding export, the material guiding groove be equipped with the pressing piece, the pressing piece with the bottom surface rotatory movable joint of material guiding groove, just the pressing piece with material guiding frame between be equipped with elastic part, the pressing piece is equipped with first inclined plane away from material guiding export one end, first inclined plane towards one of the side walls of material guiding groove set, the drive mechanism includes drive insert plate and driving piece, drive insert plate insert into material guiding groove, just the one end of drive insert plate is equipped with with first inclined plane corresponding second inclined plane, the material guiding unit above can reliably guide and limit metal lead, effectively improve the bonding reliability.

The present invention relates to a MEMS device and a manufacturing method thereof, comprising: a surface acoustic wave filter including an interdigital transducer; a first structural layer located above the surface acoustic wave filter; a bulk acoustic wave filter including a carrier substrate, an acoustic reflection structure located on the surface of the carrier substrate, and a piezoelectric stacked structure on the acoustic reflection structure, the piezoelectric stacked structure including a first electrode, a piezoelectric layer, and a second electrode stacked in sequence; the first structural layer has a first cavity, and the effective resonance region of the piezoelectric stacked structure and the interdigital transducer of the surface acoustic wave filter cover the first cavity. The present invention realizes vertical integration by providing the first structural layer with the first cavity between the surface acoustic wave filter and the bulk acoustic wave filter, so that the effective resonance region of the piezoelectric stacked structure and the interdigital transducer of the surface acoustic wave filter jointly cover the first cavity, thereby reducing the packaging volume of the entire system, achieving miniaturization, and greatly improving the integration level.

There is provided a novel Cu bonding wire that achieves a favorable FAB shape and achieves a favorable bond reliability of the 2nd bonded part even in a rigorous high-temperature environment. The bonding wire for semiconductor devices is characterized in that the bonding wire includes: a core material of Cu or Cu alloy; and a coating layer containing conductive metal other than Cu formed on a surface of the core material, wherein the coating layer has a region containing Pd as a main component on a core material side, and has a region containing Ni and Pd in a range from a wire surface to a depth of 0.5d when a thickness of the coating layer is defined as d (nm) in a thickness direction of the coating layer, the thickness d of the coating layer is 10 nm or more and 130 nm or less, a ratio CNi / CPd of a concentration CNi (mass%) of Ni to a concentration CPd (mass%) of Pd relative to the entire wire is 0.02 or more and 0.7 or less, a position indicating a maximum concentration of Ni is present in the range from the wire surface to a depth of 0.5d in a concentration profile in a depth direction of the wire, and the maximum concentration of Ni is 10 atomic% or more, and at least one of the following conditions (i) and (ii) is satisfied: (i) a concentration of In relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less (ii) a concentration of Ag relative to the entire wire is 1 ppm by mass or more and 500 ppm by mass or less.

The Pd-coated Cu bonding wire of the embodiment of the present invention contains 1.0 to 4.0 mass % of Pd and a total of 50 mass ppm or less of S group elements (5.0 to 12.0 mass ppm of S, 5.0 to 20.0 mass ppm of Se, or 15.0 to 50 mass ppm of Te). <100> The orientation ratio is 15% or more, and <111> The orientation ratio was 50% or less. When a free air ball was formed on the wire and the tip portion was analyzed, a Pd-rich region was observed on the surface.

The present invention relates to the technical field of building foundation construction, and mainly provides an assembled shrinking foundation. The foundation includes a plurality of prefabricated substrates and prefabricated cover plates. The prefabricated substrates include a substrate body and an assembly groove body protruding from the surface of the substrate body. The plurality of prefabricated substrates are spliced ​​together through the substrate body to form a base layer, and the assembly groove bodies on the plurality of prefabricated substrates are spliced ​​together to form a groove body network. The prefabricated cover plate includes a cover plate body, a top support platform and a support foot. The top support platform is protruding from the middle of the cover plate body, one end of the support foot is connected to the side end face of the cover plate body, and the plurality of cover plate bodies are covered on the groove body network and the side end faces are flush with the inner side wall of the assembly groove body, and the other end of the support foot extends into the assembly groove body. The use of an assembled shrinking foundation with a cover can improve the overall structural reliability and service life while ensuring the efficiency of the assembly operation.

The invention relates to an electrode assembly and a preparation method, and the preparation method comprises the steps: providing a pole and a sleeve, the sleeve comprises a cylinder body, one end of the cylinder body is provided with a flanging flange, and the sleeve is made of 316L stainless steel; the pole and the sleeve are positioned, so that the pole is located in the sleeve, the space between the pole and the sleeve is filled with glass powder to form an assembly, and the thermal expansion coefficient of the glass powder is as follows; heating the assembly to melt the glass powder so as to seal the pole and the sleeve together; and cooling the assembly until the molten glass powder is completely solidified to form the glass ring. The invention also discloses an electrode assembly. The reliability and long-term stability of the sealing structure can be improved, and the damage risk is reduced.

There is provided a novel Cu bonding wire that achieves a favorable FAB shape and reduces a galvanic corrosion in a high-temperature environment to achieve a favorable bond reliability of the 2nd bonded part. The bonding wire for semiconductor devices is characterized in that the bonding wire includes: a core material of Cu or Cu alloy; and a coating layer containing conductive metal other than Cu formed on a surface of the core material, wherein the coating layer has a region containing Pd as a main component on a core material side, and has a region containing Ni and Pd in a range from a wire surface to a depth of 0.5d when a thickness of the coating layer is defined as d (nm) in a thickness direction of the coating layer, the thickness d of the coating layer is 10 nm or more and 130 nm or less, a ratio CNi / CPd of a concentration CNi (mass%) of Ni to a concentration CPd (mass%) of Pd relative to the entire wire is 0.02 or more and 0.7 or less, and a position indicating a maximum concentration of Ni is present in the range from the wire surface to a depth of 0.5d in a concentration profile in a depth direction of the wire, and the maximum concentration of Ni is 10 atomic% or more.

A display device includes: a pixel; a signal line electrically connected to the pixel; and a signal pad connected to the signal line. The signal pad includes: a first conductive pattern disposed on the pad portion; a second conductive pattern disposed on the first conductive pattern; and an insulating pattern disposed between the pad portion of the signal line and the second conductive pattern in a cross-sectional view, and overlapping the second conductive pattern in a plan view. The insulating pattern passes through the first conductive pattern via a hole defined in the first conductive pattern and overlapping the insulating pattern in a plan view.

The invention relates to an optical adhesive sheet. This adhesive sheet (10) contains a base polymer, a photopolymerizable polyfunctional compound, and a photopolymerization initiator. The adhesive sheet (10) has at least one followable height difference d of 50 [mu] m or more in a predetermined height difference followability test, and the ratio of the followable height difference d to the thickness D of the adhesive sheet (10) is 0.4-0.8 (inclusive). The adhesive sheet (10) has an adhesive strength (B1) of 1.5 MPa or more in a predetermined first tensile test.