The invention relates to the technical field of photoresists, in particular to a
polymer for an ArF
photoresist and a preparation method thereof and a
photoresist composition, the structural general formula of the
polymer is as follows: # imgabs0 # x, y, z and m are
mass fractions of
polymer repetitive units respectively, x is selected from 5-10%, y is selected from 10-20%, z is selected from 25-50%, m is selected from 35-50%, the weight-average molecular weight of the polymer is selected from 2000-20000 Da, m is selected from 5-20%, and m is selected from 5-20%. The molecular weight
dispersion coefficient of the polymer is 1.0 to 3.0. The preparation method comprises the following steps: mixing a
monomer A, a
monomer B, a
monomer C, a monomer D and a free
radical initiator, dissolving the mixture in an electronic-grade reaction
solvent to prepare a
mixed solution, preparing a polymer by controlling the
reaction temperature and the reaction time, and after the reaction is finished, dropwise adding the
reaction system into a poor
solvent for
granulation to obtain the polymer. The
photoresist composition prepared from the polymer is high in
adhesive force, good in
corrosion resistance and stable in pattern.