Adhesion of a porous low K film to an underlying
barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in
silicon oxide, than the overlying porous low K film. This adhesion layer can be formed utilizing one of a number of techniques, alone or in combination. In one approach, the adhesion layer can be formed by introduction of a rich oxidizing gas such as O2 / CO2 / etc. to oxidize Si precursors immediately prior to deposition of the low K material. In another approach, thermally labile chemicals such as alpha-
terpinene, cymene, and any other non-
oxygen containing organics are removed prior to low K film deposition. In yet another approach, the hardware or
processing parameters, such as the manner of introduction of the non-
silicon containing component, may be modified to enable formation of an
oxide interface prior to low K film deposition. In still another approach, parameters of ebeam treatment such as dosage, energy, or the use of thermal annealing, may be controlled to remove carbon species at the interface between the barrier and the low K film. In a further approach, a pre-treatment
plasma may be introduced prior to low k deposition to enhance heating of the barrier interface, such that a
thin oxide interface is formed when low K deposition gases are introduced and the low K film is deposited.