33results about How to "Improve Outcoupling Efficiency" patented technology

A device for emitting radiation at a predetermined wavelength is presented. This device has a cavity with an active layer in which said radiation is generated by charge carrier recombination. The edges of the device define the region or space for radiation and / or charge carrier confinement. At least one of the edges of this cavity has a substantially random grating structure. The edge of the device has substantially random grating structure and can extend as at least one edge of a waveguide forming part of this radiation emitting device. The radiation emitting device of the present invention can have a cavity comprising a radiation confinement space that includes confinement features for the charge carriers confining the charge carriers to a subspace being smaller than the radiation confinement space within the cavity. The emitting device can comprise at least two edges forming, in cross-section, a substantially triangular shape. The angle between these two edges is smaller than 45°. At least one of the two edges has a transparent portion. the devices according to the present invention can be arranged in arrays.

An organic light emitting display device comprises: a substrate; a plurality of thin film transistors (TFTs) formed on a first surface of the substrate; a passivation layer covering the plurality of TFTs; a plurality of first pixel electrodes formed on the passivation layer and respectively electrically connected to the plurality of TFTs, and overlapping with the plurality of TFTs so as to cover the plurality of TFTs, and including a reflection layer formed of a light-reflecting conductive material; a second pixel electrode formed of a light-transmitting conductive material and disposed on the passivation layer so as to be electrically connected to the plurality of first pixel electrodes; an opposite electrode formed such that light is transmitted or reflected therethrough, and disposed opposite the plurality of first pixel electrodes and the second pixel electrode; and an organic layer interposed between the plurality of first pixel electrodes and the second pixel electrode, and including an emission layer. Accordingly, transmittivity of the organic light emitting display device is increased, and optical outcoupling efficiency of the organic light emitting display device is also increased during double-sided emission.

The present invention relates to radiation, preferably light emitting, devices with a high radiation emission efficiency and to fabricating these as small devices in an array of such devices. In one embodiment, the emitting devices can be placed in dense arrays. In another embodiment, outcoupling efficiency of the devices is improved, which leads to a reduced power consumption for a given radiation output power. In another embodiment, the speed of the radiation is increased, hence the serial bandwidth per optical channel is increased. The invention further relates to light emitting devices that exhibit uniform radiation emission characteristics. The light emitting devices (diodes, LEDs) of the present invention can be used for applications wherein two-dimensional LED arrays, particularly low-power arrays, are useful, such as in display technology. Active matrix displays relying on liquid crystals (e.g. integrated on CMOS circuitry) could be replaced by LED arrays. Dense and bright one-dimensional LED arrays are useful for example for printing and copying. Also for single LED applications it is important to have a maximum of photons escaping from the light emitting surface. The intensity of light per unit area (the brightness) is larger, and this is useful in many applications. Furthermore, the packaging cost can be reduced. In order to achieve a large global efficiency, many conventional LEDs need an elaborate package that includes a cavity with mirrors, because the light is emitted from more than one surface of the LED.

A device emits radiation at a predetermined wavelength. The device includes a light-emitting diode (LED) which generates the radiation. The device further includes at least one edge having a substantially random diffraction grating structure in radiative communication with the LED.

A display includes a light-emitting element which includes a back electrode, a front electrode facing the back electrode, and an active layer interposed therebetween and including an emitting layer, and a light-scattering layer which is placed on a front side of the front electrode. The light-emitting element forms at least a portion of a microcavity structure. A forward-scattered light is greater in luminous energy than a back-scattered light when the light-scattering layer is irradiated with light from the microcavity structure.

Embodiments of the invention can provide organic light-emitting devices (OLEDs) with enhanced outcoupling efficiency. Specific embodiments can enhance the outcoupling efficiency by more than four times. Embodiments of the invention incorporate microlens 5 arrays on the emitting surface of a top-emission OLED. Incorporation of microlens arrays on the emitting surface of a top-emission OLED can greatly enhance the outcoupling efficiency in OLEDs. With a microlens array attached to the emitting surface, much of, if not all, of the waveguiding modes can be extracted. The microlens array can be fabricated using the inkjet printing method or using other methods, including molding.

The invention discloses a luminescent device, a manufacturing method thereof and a display device, and belongs to the field of luminescent devices. The luminescent device comprises a substrate, a luminescent unit and a thin film packaging structure, wherein the luminescent unit is arranged on the substrate; the thin film packaging structure is arranged on the side, far away from the substrate, ofthe luminescent unit; the thin film packaging structure comprises at least one packaging film; a target packaging film in the at least one packaging film is provided with a first packaging part and asecond packaging part which is located at the same layer with the first packaging part and in contact with the first packaging part; the positive projection of the first packaging part on the substrate covers the positive projection of the luminescent unit on the substrate; and the refractive index of the first packaging part is smaller than the refractive index of the second packaging part. The luminescent device is beneficial for avoiding the light emitted by the luminescent unit from generating a waveguide effect on the thin film packaging structure, and is beneficial for improving the external coupling efficiency of the luminescent device. The invention is used for luminescent devices.

The objective of the present invention is to provide a sealant for an LED device capable of forming a sealing layer having a high level of light extraction, outstanding resistance to sulfidizing gas, and not giving rise to cracking or peeling even when used for extended periods, as well as an LED device employing the same. In order to attain at least one of the abovementioned objective, a sealant for an LED device reflecting one aspect of the present invention contains 100 mass parts of a 1000-3000 mass average molecular weight polysiloxane polymerized from a trifunctional monomethyl silane compound and a tetrafunctional silane compound, 5 mass parts to 100 mass parts of an organometallic compound comprising a metal alkoxide or metal chelate containing a Group 4 or Group 13 metal, and a solvent.

A top emission organic EL display includes an array substrate including an insulating substrate, organic EL elements which are arranged on a main surface of the insulating substrate, and an outcoupling layer which extracts light components propagating in in-plane direction while causing multiple-beam interference from the organic EL element to make the light components travel in front of the organic EL element, and a sealing substrate facing and spaced apart from the organic EL elements. The display forms an enclosed space filled with an inert gas or evacuated between the sealing substrate and an element portion of the array substrate corresponding to the organic EL element. A distance between the element portion and the sealing substrate is 100 nm or longer.

An organic light-emitting device includes a substrate, a first electrode layer on the substrate, a patterned refractive layer on the first electrode layer, a taper angle between a patterned end of the refractive layer and a surface of the first electrode being about 20 to about 60 degrees, the refractive layer including a material having a different refractive index than at least one of the first electrode layer and an organic light-emitting layer, the organic light-emitting layer that covers the refractive layer and is on the first electrode, the organic light-emitting layer contacting the patterned end of the refractive layer, and a second electrode layer on the organic light-emitting layer.

The planar light emitting device according to the present invention includes: an organic electroluminescence element; a formation substrate of a light transmissive resin material being adjacent to a first surface of the organic electroluminescence element; a light outcoupling structure provided to the formation substrate and suppressing reflection of light emitted from the organic electroluminescence element at a surface of the formation substrate; a first moisture preventer with a moisture proof property being over a second surface of the organic electroluminescence element to cover the organic electroluminescence element; and a second moisture preventer with a moisture proof property covering the formation substrate to prevent moisture from passing through the formation substrate and reaching the first surface of the organic electroluminescence element. The second moisture preventer includes an overlap overlapping the first surface in the thickness direction of the organic electroluminescence element. The overlap is of a light transmissive material.

The invention discloses an OLED structure optimization design method and device and belongs to OLED field. The method includes the following steps: step 1, determining the working wavelength lambda ofOLED, the optical constant of each layer material of OLED, the initial design thickness value of each layer material of OLED and the azimuth of the main axis of anisotropic material in OLED, theta and psi; step 2, establishing the multi-layer stack optical model of OLED based on the parameters identified in step 1 and adjusting the thickness of cathode, cathode finish layer, luminous layer, holetransport layer, hole injection layer, anode and the layer to be optimized in the substrate. The simulation test is conducted to obtain the external coupling efficiency of OLED at different structurethicknesses and determine the maximum structural thickness of external coupling efficiency. The device is used to executive the above method. The method has the advantages of simple principle and easy-to-operate and can realize the simulation optimization calculation of OLED structure dimension.

An organic light emitting display device comprises: a substrate; a plurality of thin film transistors (TFTs) formed on a first surface of the substrate; a passivation layer covering the plurality of TFTs; a plurality of first pixel electrodes formed on the passivation layer and respectively electrically connected to the plurality of TFTs, and overlapping with the plurality of TFTs so as to cover the plurality of TFTs, and including a reflection layer formed of a light-reflecting conductive material; a second pixel electrode formed of a light-transmitting conductive material and disposed on the passivation layer so as to be electrically connected to the plurality of first pixel electrodes; an opposite electrode formed such that light is transmitted or reflected therethrough, and disposed opposite the plurality of first pixel electrodes and the second pixel electrode; and an organic layer interposed between the plurality of first pixel electrodes and the second pixel electrode, and including an emission layer. Accordingly, transmittivity of the organic light emitting display device is increased, and optical outcoupling efficiency of the organic light emitting display device is also increased during double-sided emission.

A top emitting OLED includes two organic light-extraction layers on top of an at least partially transparent cathode. At least one of the light-extraction layers comprises an electron transport material and at least one of the light-extraction layers comprises a hole transport material. In some embodiments, the electron transport material is Alq3 and the hole transport material is a triaryl amine derivative.

The present disclosure relates to a light emitting diode that includes a charge control layer disposed between a charge transfer layer and one electrode and including polysiloxane-based material chemically bonded to a surface of the charge transfer layer and a light emitting device having the same. The charge control layer is configured to remove a surface defect of the charge transfer layer, to transport charges stably, and to reflect a part of light passing through the charge transfer layer, and thereby enhancing out-coupling efficiency. In addition, the charge control layer regulates a charge flow from the electrode to the charge transfer layer, so that charges may be injected into an emitting material layer in a balanced manner.

A semiconductor device and a method for producing a plurality of semiconductor devices are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor chip having a semiconductor layer sequence with an active region, a radiation exit surface arranged parallel to the active region and a plurality of side faces arranged obliquely or perpendicular to the radiation exit surface. The device further includes a contact track electrically connecting the semiconductor chip to a contact surface configured to externally contact the semiconductor device, a molding and a rear side of the semiconductor chip remote from the radiation exit surface, the rear side being free of a material of the molding, wherein one of the side faces is configured as a mounting side face for fastening of the semiconductor device, and wherein the contact track runs on one of the side faces in places.

In an embodiment an optoelectronic semiconductor device includes a semiconductor chip having a semiconductor layer sequence with an active region, a radiation exit surface arranged parallel to the active region and a plurality of side faces arranged obliquely or perpendicular to the radiation exit surface. The device further includes a contact track electrically connecting the semiconductor chip to a contact surface configured to externally contact the semiconductor device, a molding and a rear side of the semiconductor chip remote from the radiation exit surface, the rear side being free of a material of the molding, wherein one of the side faces is configured as a mounting side face for fastening of the semiconductor device, and wherein the contact track partially runs on one of the side faces.

The invention relates to a white organic electroluminescence device realized by adopting a color conversion injection layer and a manufacturing method thereof. The white organic electroluminescence device consists of an indium tin oxide glass substrate (1), the color conversion injection layer (2), a hole transmission layer (3), a luminescent layer (4), an electronic transmission layer (5) and a composite cathode layer (6). The manufacturing method of the device comprises the steps of: preparing the color conversion injection layer (2) on the indium tin oxide glass substrate in a rotary coating manner, and then evaporating the hole transmission layer (3), the luminescent layer (4), the electronic transmission layer (5) and the composite cathode layer (6) in sequence. In the device, the structure is simple, only a single blue-light luminescent material is needed, and the color conversion layer is excited to emit red light, so that white light is realized. The white organic electroluminescence device has the advantages that the chromaticity is stable, the efficiency is high and the cost is low.

The invention discloses a preparation method of an annular cavity surface-equipped and difference frequency terahertz-emitting quantum cascading laser structure. The preparation method comprises the following steps of 1, enabling a lower waveguide layer, a lower optical limiting layer, a first active layer, an interval layer, a second active layer, an upper optical limiting layer and an upper waveguide layer to be grown on a substrate in sequence; 2, removing the upper waveguide layer, etching multiple gratings in the upper optical limiting layer in a radial pattern to form a dual-cycle annular grating; 3, performing re-growth of the upper waveguide layer on the etched upper optical limiting layer; 4, etching an annular ridge structure in the upper waveguide layer downwards, wherein the etching depth reaches the lower optical limiting layer; 5, filling the trenches of the etched annular ridge structure with semi-insulated InP: Fe; 6, performing evaporation of a front surface metal electrode on the annular ridge structure, the trenches of which are filled with the semi-insulated InP: Fe, and then performing gold plating; 7, performing thinning and polishing on the substrate, and performing evaporation of a back surface metal electrode on the back surface of the substrate; and 8, etching the metal electrodes to prepare two-stage annular surface metal gratings to complete preparation.

The invention provides an organic light emitting diode (OLED), having a substrate, an anode layer of silver or gold, wherein the anode layer is treated with CF4 plasma to enhance the hole injection of the semitransparent anode layer.

The invention discloses a light extraction film having hollow bubbles and an organic light-emitting diode and a processing method thereof. The light extraction film having hollow bubbles is prepared based on high-refractive-index materials TiO2, ZnO, SiO2, ZnGe and ZrO2 and combined with dual ion beam sputtering technology to modify a thin film; and such structure can both serve as an external extraction film of the device and an internal extraction film of the device to increase output of the light. The processing method of the light extraction film is a preparation method for preparing a multiple-bubble structure film by introducing an assistant ion source in the sputtering process and through power adjustment of the assistant ion beam and rotation adjustment of a sample bench based on ion beam sputtering IBSD technology. The provided OLED illuminating device comprises the light extraction film having the hollow bubbles, so that under the premise of not damaging device structure, waveguide / substrate mode during light emission process is reduced, and coupling light extraction efficiency of the device is improved.

The invention discloses an OLED structure optimization design method and device and belongs to OLED field. The method includes the following steps: step 1, determining the working wavelength lambda ofOLED, the optical constant of each layer material of OLED, the initial design thickness value of each layer material of OLED and the azimuth of the main axis of anisotropic material in OLED, theta and psi; step 2, establishing the multi-layer stack optical model of OLED based on the parameters identified in step 1 and adjusting the thickness of cathode, cathode finish layer, luminous layer, holetransport layer, hole injection layer, anode and the layer to be optimized in the substrate. The simulation test is conducted to obtain the external coupling efficiency of OLED at different structurethicknesses and determine the maximum structural thickness of external coupling efficiency. The device is used to executive the above method. The method has the advantages of simple principle and easy-to-operate and can realize the simulation optimization calculation of OLED structure dimension.

A light-emitting device with high emission efficiency and low driving voltage is provided. A light-emitting apparatus, an electronic device, and a lighting device with low power consumption are provided. The following organic compound is provided: the organic compound has an arylamine structure; and when the organic compound is deposited to be a film, the ordinary refractive index of the deposited film with respect to light with a wavelength of 458 nm is greater than or equal to 1.50 and less than or equal to 1.75, the birefringence Δn of the deposited film with respect to light with a wavelength of 458 nm is greater than or equal to 0 and less than or equal to 0.008, or the alignment order parameter of the deposited film with respect to light with a wavelength corresponding to the longest wavelength where an absorption peak appears in the absorption spectrum is greater than or equal to −0.07 and less than or equal to 0.00.