The invention discloses a
radiation EMI
simulation prediction method for an inductive
conductivity sensor. The method comprises the following steps: S1, establishing a sensor
simulation model; s2, on the basis of the working principle of the inductive
conductivity sensor, performing component connection on a probe coil of the sensor
simulation model and a PCB (
Printed Circuit Board) to obtain an
induced voltage prediction model of an output port of the probe coil; importing a preset model file of the PCB into board-level
electromagnetic simulation software, and obtaining near-field
radiation data when the PCB works; s3, selecting a plurality of corresponding frequency points meeting a preset
radiation threshold according to the near-field radiation data, and recording a radiation
electric field value corresponding to each frequency point; s4, setting a point radiation source position through three-dimensional
electromagnetic field simulation software so as to add an excitation source; s5, based on an
induced voltage prediction model of an output port of the probe coil, obtaining predicted
induced voltage according to the added excitation source; and S6, taking the predicted induced
voltage as an alternating-current equivalent
voltage source, and simulating and obtaining the interference of the induced
voltage of the output port of the probe coil on an
operational amplifier chip according to a pre-constructed
operational amplifier working circuit. The problem that in the prior art, interference generated by
radiation emission of components and parts on external devices cannot be analyzed, and the influence of the interference on some chips cannot be clearly analyzed is solved.