422results about "Organic non-surface-active detergent compositions" patented technology

The invention provides a cleaning composition and application thereof and an electronic device, the cleaning composition comprises a charge modifier, a corrosion inhibitor, a pH regulator and a solvent, the charge modifier comprises a sulfonic acid compound, the corrosion inhibitor comprises an amino compound, and the amino compound contains amino and / or secondary amino, hydroxyl and carboxyl; the pH value of the cleaning composition is 1-4. The special charge modifier and the corrosion inhibitor are selected for matching, and the cleaning composition is controlled within a proper pH value range, so that the metal surface corrosion of the leveling workpiece can be effectively inhibited, and the residual nano abrasive on the surface of the leveling workpiece can be effectively removed; further, the cleaning composition with excellent cleaning effect and corrosion protection effect is obtained. When the composite material is applied to preparation of electronic devices, the comprehensive performance of the electronic devices can be improved.

The invention relates to a detergent tablet comprising from 5 to 20 percent by weight citric acid or a salt thereof and from 3 to 25 percent by weight sodium benzoate and a surfactant. The invention also relates to a method of forming a wash liquor by combining a detergent tablet with water in a container. The invention also relates to the use of a detergent tablet to create a washing liquor for cleaning surfaces.

Laundry additive compositions that include a metal sequestration agent and that may be characterized by an acidic pH. Related methods of treating a fabric, for example with a wash liquor and a rinse liquor, with such compositions and / or agents. Uses of such laundry additive compositions.

An object of the invention is to provide a method of cleaning semiconductor substrates that is excellent in abrasive particle removing performance with respect to semiconductor substrates having undergone CMP, as well as a cleaning liquid for semiconductor substrates having undergone CMP. The invention provides a method of cleaning semiconductor substrates, the method comprising a cleaning step of cleaning, by use of a cleaning liquid, a semiconductor substrate having undergone CMP using a polishing liquid containing abrasive particles. The semiconductor substrate contains metal, and the cleaning liquid has a pH of more than 7 at 25° C. The cleaning liquid comprises: a chelating agent; a specific component A; and an anticorrosive. The method satisfies Condition 1 that a product of a contact angle ratio obtained by a specific test method 1 and a specific degree of agglomeration obtained by a specific test method 2 is not more than 15.

Described are compositions for selectively removing oxide compounds and etching residues of one or both of Co and Cu in the presence of one or more of Co, Cu, W, Ru, and Mo, methods for using the compositions for selectively removing oxide compounds and etching residues of one or both of Co and Cu in the presence of one or more of Co, Cu, W, Ru, and Mo in a process for manufacturing a semiconductor device, and a method for manufacturing a semiconductor device comprising selectively removing oxide compounds and etching residues of one or both of Co and Cu in the presence of one or more of Co, Cu, W, Ru, and Mo.

This invention relates to compositions and methods for cleaning and peeling. This disclosure provides a composition for cleaning or peeling materials from a substrate. The composition includes a primary solvent and a co-solvent. The co-solvent includes one or more caprolactam-derived solvents.

The invention belongs to the field of fine chemicals and glass storage, and particularly relates to composite acid, a preparation method and a method for cleaning glass rainbow spots through the composite acid. The preparation method comprises the following steps: sequentially adding 3-5% of acetic acid, 0.1-0.2% of fatty alcohol-polyoxyethylene ether, 0.3-0.5% of disodium ethylene diamine tetraacetate, 0.5-1.5% of hydrofluoric acid, 1.5-3% of concentrated sulfuric acid and the balance of water to a proper amount of water, and uniformly mixing to obtain a composite acid; the method comprises the following steps: completely immersing glass with rainbow spots in a thermal composite acid solution, taking out the glass, cleaning the glass until no composite acid solution is left, adding calcium carbonate into waste liquid after cleaning is completed, and discharging the waste liquid after the pH value of the waste liquid is qualified. The glass cleaning agent has an efficient and comprehensive decontamination effect on glass rainbow spots, impurity ions difficult to remove are not introduced, and cleaned glass is high in light transmittance, low in haze and small in damage to a glass body.

The present application relates to the field of aluminum hydroxide-based lithium adsorbent, and discloses a cleaning agent composition, a cleaning agent and a regeneration method of aluminum hydroxide-based lithium adsorbent. The cleaning agent composition of the present application contains an aluminum flocculant, an ammonium salt, lithium chloride, a citrate, an acid and an emulsifier. The cleaning agent of the present application ensures the cleaning effect, and the adsorption performance of the cleaned adsorbent can be restored to more than 96% of the original adsorption capacity, and the adsorbent has no obvious solution loss.

The present disclosure relates to removal compositions for at least partially removing postchemical mechanical polishing (post-CMP) residues from the surface of a microelectronic device. The removal compositions comprise an aqueous base composition and various molybdenum etching inhibitors that reduce the amount of molybdenum removed from the surface of the microelectronic device compared to the aqueous base composition.

To provide a composition for removing edge beads of a metal-containing resist, in detail, a composition for removing edge beads of a metal-containing resist that minimizes a resist residue.SOLUTION: A composition for removing edge beads of a metal-containing resist includes: an additive including at least one selected from a group consisting of phosphoric acid, a phosphorous acid-based compound, and a hypophosphorous acid-based compound and a carboxylic acid-based compound; and an organic solvent. A mixing mass ratio of the at least one selected from the group consisting of the phosphoric acid, the phosphorous acid-based compound, and the hypophosphorous acid-based compound to the carboxylic acid-based compound is 9:1 to 1.2:1.SELECTED DRAWING: Figure 1

Provided is a water-soluble polymer that has a low viscosity and can withstand use in strongly acidic or powerfully oxidizing environments such as in hydrogen peroxide.　A polymer according to the present invention includes a structural unit represented by formula (1) and has a viscosity of at least 10 mPa·s in a 10 mass% aqueous solution. (In formula (1), m and n are 0 or 1, m+n=1, and R1–R5 represent a hydrogen atom, a C1–8 alkyl group or hydroxyalkyl group, or a phenyl group.)

The present disclosure provides water soluble laundry detergent products comprising one or more non-fibrous sheets and at least one solid layer, wherein the at least one solid layer comprises a gel and a solidifying agent and is coated on one or more sides of the one or more non-fibrous sheets, is disposed between two or more of the non-fibrous sheets, or a combination thereof; and methods of their making and using.

The present invention provides a cleaning composition that can be used to clean semiconductor substrates. [Solution] The cleaning composition described herein mainly comprises at least one organic acid and at least one anionic polymer.

To provide a manufacturing method for a semiconductor substrate using a cleaning agent composition with excellent adhesive removal properties.SOLUTION: The manufacturing method for a semiconductor substrate includes the steps of (1) bonding a wafer to a fixed member with an adhesive, (2) polishing the back surface of a bonded surface of the wafer to the fixed member, (3) processing the polished surface of the wafer, (4) separating the processed wafer from the fixed member, and (5) removing residual adhesive on the separated wafer with a cleaning agent. The step (3) includes a heat treatment of the wafer fixed to the fixed member with adhesive at a temperature of 230°C or higher. The cleaning agent composition used in step (5) is a cleaning agent which contains an alkanolamine (component A) and a glycol ether (component B) represented by the following formula (I) and has a content of component A of not less than 35 mass% and not more than 85 mass%. R-O-(EO)n-H (I)SELECTED DRAWING: None

Cleaning solvent blends containing HCFOs, such as 1-chloro-2,3,3-trifluoropropene and trans-dichloroethylene, and high-boiling HFEs, such as HFE-7300, have utility as non-flammable, low global warming potential, azeotrope-like cleaning solvent compositions. Additional solvent components may include surfactants and co-solvents. A method for cleaning soiling substances from an article includes contacting the article with the solvent composition by suitable means, such as a spray delivered by a propellant gas, as in a conventional vapor degreaser apparatus, or by contact with a liquid and / or vapor solvent composition, and removing the composition from the article.

The present invention is directed to rinse aid compositions and methods for making and using the rinse aid compositions. The compositions of the invention include a sheeting agent, a defoaming agent, and an association disruption agent. The rinse aid compositions of the present invention result in a faster draining / drying time on most substrates compared to conventional rinse aids. The rinse aid compositions of the present invention are especially suitable for use on plastic substrates.

The present invention relates to: [1] a cleaning composition for an inkjet head, the cleaning composition containing a solvent (A) and water, the dipole moment of the solvent (A) at 25 DEG C as determined by a density pan-function method being 5.0 D or more, and the water content in the cleaning composition being 30 mass% or more; [2] The use of a composition as an inkjet head cleaning agent, said composition containing: a solvent (A) having a dipole moment of 5.0 D or more at 25 DEG C as determined by a density pan-function method, and a water content of 30 mass% or more; [3] A method for cleaning an inkjet head using a composition containing a solvent (A) and water, the dipole moment of the solvent (A) at 25 DEG C as determined by a density pan-function method being 5.0 D or more, and the content of the water being 30 mass% or more.

The present invention addresses the problem of providing a cleaning liquid for semiconductor devices, the cleaning liquid exhibiting excellent dissolution inhibition performance with respect to a metal layer that contains tungsten, while having excellent cleaning performance of dry etching residues. The present invention also addresses the problem of providing a method for cleaning a semiconductor substrate.　A cleaning liquid for semiconductor devices according to the present invention contains one or more hydroxylamine compounds that are selected from the group consisting of hydroxylamine and hydroxylamine salts, a component A that is represented by a specific formula (1), and water. With respect to this cleaning liquid for semiconductor devices, the mass ratio of the content of the hydroxylamine compounds to the content of the component A is from 5 to 200.

The application discloses a cleaning method for PFA bottles, which comprises the following steps: multiple static washing of the PFA bottles with clean water; first dynamic washing of the PFA bottles with a first cleaning solution, wherein the first cleaning solution comprises propylene glycol methyl ether acetate and cyclopentanone; second dynamic washing of the PFA bottles with a second cleaning solution, wherein the second cleaning solution comprises propylene glycol methyl ether acetate and N-methyl pyrrolidone; third dynamic washing of the PFA bottles with a third cleaning solution, wherein the third cleaning solution comprises nitric acid and hydrogen peroxide; and fourth dynamic washing of the PFA bottles with a fourth cleaning solution, wherein the fourth cleaning solution comprises nitric acid and hydrochloric acid. The application has the beneficial effect of providing a cleaning method for PFA bottles, which effectively removes residues in the bottles by using multiple composite cleaning solutions.

To provide a peeling solution that can effectively remove resin. [Solution] This stripping solution contains water, an organic solvent having a δP value of 5.0 to 11.9, a δH value of 4.3 to 15.8, and a δD value of 15.9 to 18.6, and an alkaline compound having a pH of 12 or higher in the aqueous phase.

The present invention provides a composition for cleaning a semiconductor substrate, the composition having a high tungsten oxide removal rate, while having Ti / W etching selectivity.　A composition for cleaning a semiconductor substrate, the composition containing (A) an oxidant, (B) a fluorine compound, (C) a tungsten metal corrosion inhibitor and (D) a tungsten oxide etching accelerator, wherein: the addition ratio of the oxidant (A) is 0.0001% to 10% by mass relative to the total mass of the composition for cleaning a semiconductor substrate; the addition ratio of the fluorine compound (B) is 0.005% to 10% by mass relative to the total mass of the composition for cleaning a semiconductor substrate; and the addition ratio of the tungsten metal corrosion inhibitor (C) is 0.0001% to 5% by mass relative to the total mass of the composition for cleaning a semiconductor substrate.

This invention employs a washing solution containing solvents and metal removal agents. The washing solution contains two or more solvents, the distance between the Hansen solubility parameter of the washing solution and the Hansen solubility parameter of dimethylacetamide (HSP distance) is less than 1.0, and the content of metal impurities is 0.1 × 10⁻¹¹ parts by mass relative to the total of 100 parts by mass of the aforementioned solvents and metal removal agents. ‑9 10 or more by weight 2 ×10 ‑6 The amount is less than a certain percentage by weight. The washing solution described herein can improve the removal of impurities and dirt.

In one aspect, a method for manufacturing a semiconductor substrate is provided that can suppress the generation of shredded temporary fixing agent residue. In one aspect, the present disclosure relates to a method for manufacturing a semiconductor substrate, including the following steps 1 and 2: Step 1: Preparing a semiconductor substrate with a film-like temporary fixing agent adhered to it Step 2: A step of peeling off the film-like temporary fixing agent from the semiconductor substrate obtained in Step 1 using a cleaning agent containing glycol ether, hydrocarbon, and amine.

The invention relates to lipid removal enhancers that may be used alone or in concert with lipase in detergents for removal of lipid stains, such as fats and oils, from surfaces, such as textiles, with an increased benefit-risk ratio.

The invention discloses marble rust removal gel, and relates to the technical field of marble surface processing treatment. The rust removal gel for marble comprises the following components in percentage by weight: 5-20% of ammonium bifluoride; 3-20% of organic acid; and 0.2 to 1% of xanthan gum. The marble rust removal gel provided by the invention is gel-like liquid, can be well attached to the surface of marble, and has the advantages of good rust removal effect and no corrosion to the surface of the marble.

The present application provides a treatment liquid which is excellent in removal of organic residues and excellent in stability. A treatment method of a treated object related to the above treatment liquid is also provided. The treatment liquid contains water, hydroxylamine, and hydrazine species selected from one or more of hydrazine, hydrazine salts, and hydrazine derivatives, and the total content of the hydrazine species is 1 parts by mass or less relative to 100 parts by mass of the hydroxylamine.

The present invention addresses the problem of providing a chemical solution that, when used for cleaning a semiconductor substrate which contains a copper-containing material and which has been subjected to a chemical-mechanical polishing treatment, exhibits excellent corrosion-inhibiting properties with respect to copper and excellent removability of residue on the copper-containing material. The present invention also addresses the problem of providing a method for cleaning a semiconductor substrate and a method for producing an electronic device which use the chemical solution.　A chemical solution according to the present invention comprises: an alkali source; at least one specific phosphorus-atom-containing compound selected from the group consisting of phosphorus-atom-containing acids and salts thereof; at least one specific compound selected from the group consisting of a first compound and a second compound; and water, wherein pH is not more than 11.50, the first compound has at least two groups selected from the group consisting of an amino group and a hydroxyl group, and the second compound has at least two groups selected from the group consisting of a thiol group and a thioether group.

The invention relates to the technical field of semiconductor materials, and particularly discloses an atomization cleaning method for an indium phosphide wafer. The atomization cleaning method comprises the following steps that an indium phosphide wafer rotating at a constant speed is sequentially subjected to atomization cleaning through a first acid solution and deionized water and then subjected to nitrogen purging drying; carrying out atomization cleaning with an alkaline peroxide solution and deionized water, and then carrying out nitrogen purging drying; and finally, carrying out atomization cleaning by using a second acid solution and deionized water, and carrying out nitrogen purging drying to obtain the clean indium phosphide wafer. According to the method, based on an acid-alkali-acid three-step synergistic mechanism, full-spectrum pollutant removal of oxides, organic matters, particles and metal ions is realized; the indium phosphide wafer rotating at a high speed can immediately strip reaction products and waste liquid through centrifugal force, and secondary adsorption is avoided; the technical defects that a traditional RCA wet cleaning process is prone to corroding the wafer, the surface roughness of the wafer is degraded, and secondary pollution is caused are effectively overcome.

Cleaning and disinfecting compositions that impart an antimicrobial benefit to inanimate surfaces are disclosed. The cleaning and disinfecting compositions utilize a blend of organic acids and a hydrotrope. The cleaning and disinfecting composition is substantially free of alcohol or glycol ether non-aqueous solvents.