Active control of radial etch uniformity

A uniformity and etching technology, used in semiconductor/solid-state device manufacturing, discharge tubes, electrical components, etc., can solve problems such as non-uniformity of etched wafers, increase radial etching uniformity, and achieve radial etching uniformity. , the effect of frequency and phase reduction

Pending Publication Date: 2021-03-23
LAM RES CORP
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  • Abstract
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  • Claims
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Problems solved by technology

When etching a wafer, there is non-uniformity of the etched wafer

Method used

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  • Active control of radial etch uniformity
  • Active control of radial etch uniformity
  • Active control of radial etch uniformity

Examples

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Embodiment Construction

[0024] The following embodiments describe systems and methods for actively controlling radial etch uniformity. Obviously, the presented embodiments may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail in order not to unnecessarily obscure the present embodiments.

[0025] Figure 1A is a diagram of an embodiment of a system 100 illustrating controlling radial etch uniformity across a substrate surface. System 100 includes a low frequency generator (LFG) and a high frequency generator (HFG). The low frequency generator LFG is a radio frequency (RF) generator and the high frequency generator HFG is also an RF generator. System 100 also includes an RF matching device and a plasma chamber. A low frequency generator LFG is coupled via an RF cable 112 to the input I4 of the RF matching device.

[0026] The high-frequency generator HFG comprises a high-frequency sub-generator HFGf0 oper...

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Abstract

Systems and methods for active control of radial etch uniformity are described. One of the methods includes generating a radio frequency (RF) signal having a fundamental frequency and generating another RF signal having a harmonic frequency. The harmonic frequency, or a phase, or a parameter level, or a combination thereof of the other RF signal are controlled to control harmonics of RF plasma sheath within a plasma chamber to achieve radial etch uniformity.

Description

technical field [0001] The present disclosure relates to systems and methods for actively controlling radial etch uniformity. Background technique [0002] The background description provided herein is for the purpose of generally presenting the context of the disclosure. The work of the presently named inventors is neither expressly nor impliedly admitted to be prior art to the present disclosure to the extent that it is described in this Background section and in aspects of the specification that cannot be determined to be prior art at the time of filing. technology. [0003] Plasma tools generally include a radio frequency (RF) generator, impedance matching circuitry, and a plasma chamber. The RF generator generates an RF signal, which is provided to the impedance matching circuit. The impedance matching circuit receives the RF signal to output a radio frequency signal provided to the plasma chamber. Wafers are processed within a plasma chamber by a plasma generated w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01L21/3065
CPCH01J37/32165H01J37/32183H01J37/32091H01L21/3065H01J2237/24507H01J2237/327H01J2237/3344H01L21/67069
Inventor 阿列克谢·马拉赫塔诺夫菲力克斯·莱布·科扎克维奇约翰·霍兰德季兵肯尼思·卢凯西
Owner LAM RES CORP
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