Active control of radial etch uniformity

Abstract

Systems and methods for active control of radial etch uniformity are described. One of the methods includes generating a radio frequency (RF) signal having a fundamental frequency and generating another RF signal having a harmonic frequency. The harmonic frequency, or a phase, or a parameter level, or a combination thereof of the other RF signal are controlled to control harmonics of RF plasma sheath within a plasma chamber to achieve radial etch uniformity.

Description

technical field [0001] The present disclosure relates to systems and methods for actively controlling radial etch uniformity. Background technique [0002] The background description provided herein is for the purpose of generally presenting the context of the disclosure. The work of the presently named inventors is neither expressly nor impliedly admitted to be prior art to the present disclosure to the extent that it is described in this Background section and in aspects of the specification that cannot be determined to be prior art at the time of filing. technology. [0003] Plasma tools generally include a radio frequency (RF) generator, impedance matching circuitry, and a plasma chamber. The RF generator generates an RF signal, which is provided to the impedance matching circuit. The impedance matching circuit receives the RF signal to output a radio frequency signal provided to the plasma chamber. Wafers are processed within a plasma chamber by a plasma generated w...

AI Technical Summary

Problems solved by technology

When etching a wafer, there is non-uniformity of the etched wafer

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