Plane Faraday screening system of radio frequency inductive coupled plasma source

A Faraday shielding and plasma source technology, applied in the direction of plasma and electrical components, can solve problems such as instantaneous impedance mismatch, difficulty in discharge breakdown, discharge instability, etc., and achieve small antenna current standing wave effect and sputtering Small pollution and good angular uniformity
CN100534257CInactive Publication Date: 2009-08-26DALIAN UNIV OF TECH
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
DALIAN UNIV OF TECH
Publication Date
2009-08-26
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention discloses a plane Faraday shielding system for restraining the parasitic capacitive coupling during discharge of the RF inductive coupling. The characteristic is that it's composed of two parts, which is embedded in the plane Faraday shielding and embedded ignition breakdown. The Faraday shield has a type of two-piece separations with a comb-shaped structure in the crack of metal pieces. The breakdown voltage is induced by the coupling antenna, and set to the ignition electrode through RF resonance and network-controlling. An unbalanced magnetron configuration composed of a group of permanent magnets enhances ignition and discharge, and transports plasma to the discharge zone.
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Description

technical field

[0001] The invention relates to the radio frequency inductively coupled plasma source technology used in the etching process of large-scale microelectronic integrated circuit chips, which uses plane Faraday shielding to suppress or reduce the parasitic capacitive coupling in the radio frequency inductively coupled discharge, and solves the problem of plasma etching of microelectronic chips. Dielectric coupling window sputtering in the etching process, electronegativity discharge instability, and instantaneous impedance mismatch of pulse discharge. Background technique

[0002] RF inductively coupled plasma (ICP) source is an important high-density plasma source, which has been widely used in the plasma etching process of deep submicron / nano microelectronic integrated circuit chips. On the antenna of the ICP source, there are both RF currents and RF voltages. The former generates a vortex electric field that accelerates electrons through inductive coupling, a...

Claims

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