Plasma treatment device and radio frequency device thereof

A technology of radio frequency device and processing equipment, applied in the field of microelectronics, can solve problems such as impossibility of smooth impedance matching, and achieve the effect of simple and easy matching process and low cost

Active Publication Date: 2010-06-23
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the inductance of the inductive coupling coil 14 is small, the imaginary part of the total impedance of the load is capacitive; for capa

Method used

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  • Plasma treatment device and radio frequency device thereof
  • Plasma treatment device and radio frequency device thereof
  • Plasma treatment device and radio frequency device thereof

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Embodiment Construction

[0028] The core of the present invention is to provide a radio frequency device for plasma processing equipment, which can simply and conveniently realize impedance matching of various loads including capacitive loads. Another core of the present invention is to provide a plasma processing apparatus including the above-mentioned radio frequency device.

[0029] In order to make those skilled in the art better understand the solution of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0030] Please refer to figure 2 , figure 2 It is a schematic structural diagram of a radio frequency device provided by the first specific embodiment of the present invention.

[0031] In the first specific embodiment, the radio frequency device provided by the present invention includes a radio frequency power supply 2 (its common operating frequency is 13.56MHz) and a radio frequency...

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Abstract

The invention discloses a radio frequency device which is used for a plasma treatment device and comprises a radio-frequency power supply, a radio-frequency matcher and at least two groups of inductive coupling coils, wherein the proportion of the radio-frequency current in the inductive coupling coils is regulated by a current regulating device; and the current regulating device comprises a variable capacitor and an inductance component. The imaginary part of the total impedance including the current regulating device and the inductive coupling coils is inductive by reasonably setting the inductance value of the inductance component; and the impedance matching is realized by the traditional radio-frequency matcher comprising a plurality of capacitive components when the imaginary part of the total impedance is inductive, the matching process is simple and practicable, and the cost is also lower.

Description

technical field [0001] The present invention relates to the technical field of microelectronics, in particular to a radio frequency device for plasma processing equipment. The present invention also relates to a plasma processing apparatus comprising the above-mentioned radio frequency device. Background technique [0002] Plasma processing equipment is widely used in the field of microelectronics technology. [0003] Please refer to figure 1 , figure 1 It is a schematic structural diagram of a typical plasma processing equipment. [0004] The plasma processing apparatus 1 has a reaction chamber 11 inside, the top of the reaction chamber 11 has an upper cover 12 , and a gas inlet 13 is arranged in the middle of the upper cover 12 , so that gas is input into the reaction chamber 11 through the gas inlet 13 . The top of the upper cover 12 is also provided with an inductive coupling coil 14 through which a radio frequency current can be passed. [0005] When the plasma pro...

Claims

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Application Information

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IPC IPC(8): H05H1/46H01J37/32
Inventor 韦刚
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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