High-sensitivity CoFeB based magnetic tunnel junction

A magnetic tunnel junction and magnetic technology, which is applied in the field of high-sensitivity CoFeB-based magnetic tunnel junctions, can solve the problems of few works considering the influence of the transition layer, achieve good thermal stability and improve sensitivity

Inactive Publication Date: 2012-10-03
TSINGHUA UNIV
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Problems solved by technology

At present, the CoFeB-based magnetic tunnel junction mainly uses Ta as the transition layer between the magnetic electrode and the s...

Method used

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Embodiment

[0015] MSP-620D magnetron sputtering equipment was used to deposit a multilayer thin film W(6nm) / CoFeB(10nm) / MgO(2nm) / CoFeB(8nm) / Ta(2nm) with the following structure. The background vacuum of the deposition is better than 3.0×10 -5 Pa, the CoFeB target material composition for magnetron sputtering is Co 30 Fe 50 B 20 (subscript is mass percentage), the substrate used for deposition is Si / SiO 2 , before deposition, use acetone, alcohol, and deionized water to ultrasonically clean for 8 minutes each. The deposition process was completed in high-purity Ar (99.99%) at 0.4Pa. W, CoFeB and Ta were all grown at a lower power of 10W, and MgO with (001) texture was prepared by radio frequency magnetron sputtering with a power of 150W. The multilayer film is processed into a size of 5×3 μm by UV exposure, argon ion etching and metal lift-off method 2 ~100×60μm 2 tunnel junction. The coercive force of the obtained material is only 4.5Oe before annealing, and the squareness R S =0...

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Abstract

The invention discloses a high-sensitivity CoFeB based magnetic tunnel junction, which structurally and sequentially comprises a substrate, a transition layer, a magnetic electrode layer, an insulation layer, a magnetic electrode layer and a protecting layer, wherein the magnetic electrode layers are CoFeB layers, and the transition layer is a tungsten layer. The high-sensitivity CoFeB based magnetic tunnel junction has a concrete structure of Si/SiO2/W(3-15nm)/CoFeB(5-20nm)/MgO or Al2O3(1-3nm)/CoFeB(5-20nm)/Ta(1-5nm). W is used for replacing Ta to be used as the transition layer in the magnetic tunnel junction, CoFeB can be promoted to realize the subtile turning in a lower magnetic field, and in addition, good heat stability is realized. Because the W layer cannot easily form alloy with Co and Fe, the CoFeB at the interface part keeps good amorphous morphology, the coercive force of the obtained material is weak, and the rectangle degree is high. After the material annealing, the coercive force and the rectangle degree have small changes, and the heat stability is good.

Description

technical field [0001] The invention relates to a highly sensitive CoFeB-based magnetic tunnel junction. Background technique [0002] With the advent of the information age, massive resources and information put forward higher requirements for storage devices. The information stored in traditional commercial memory, such as static random access memory (SRAM) and dynamic random access memory (DRAM), will be lost when there is no external voltage; while flash memory (flash) is non-volatile, but its data processing speed is improved and the device Miniaturization has encountered an insurmountable bottleneck. Therefore, it is imminent to develop storage materials with high speed, high density, low energy consumption and non-volatility. [0003] Magnetic random access memory (MRAM), which may be commercialized in the future, combines the advantages of the above-mentioned random access memory (RAM), and has many excellent characteristics such as non-volatile, high speed, high d...

Claims

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Application Information

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IPC IPC(8): H01L43/08
Inventor 宋成崔彬潘峰
Owner TSINGHUA UNIV
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