The invention discloses an AlGaN / GaN
heterojunction multi-channel
structure based terahertz
schottky diode and a manufacturing method therefor, and mainly aims to solve the problem of low
doping mobility ratio, high series resistance and low
cut-off frequency of the existing GaN
schottky diode. The AlGaN / GaN
heterojunction multi-channel
structure based terahertz
schottky diode comprises a main body part and an auxiliary body part, wherein the main body part comprises (1) a semi-insulating
SiC substrate, (2) a GaN buffer layer, (3) an AlGaN / GaN
heterojunction multi-channel layer, and (4) a GaN cap layer from the bottom up; the auxiliary body part comprises (5) an
ohmic contact electrode (negative
electrode), (6) a
schottky barrier contact electrode (positive
electrode), (7) an
air bridge and (8) a back
gold layer, wherein the AlGaN / GaN heterojunction multi-channel layer adopts an AlGaN / GaN type
superlattice structure; the
superlattice has 2-6 periods; and the thicknesses of the GaN layer and the AlGaN layer are both 10-20nm in each period, and the Al component accounts for 30% of the AlGaN layer. According to the terahertz schottky
diode provided by the invention, the conventional n type
doping process can be avoided; the multi-layer two-dimensional
electron gas channels formed by polarization are adopted, so that the
electron mobility is improved, the series resistance is lowered, and the
cut-off frequency is improved, so that the AlGaN / GaN heterojunction multi-channel
structure based terahertz schottky
diode is applicable to operations under terahertz frequency bands.