Horizontal dispersion oxide semiconductor of heterogeneous bar multi-step field electrode board

Abstract

The invention discloses a lateral double diffusion metal oxide semiconductor of a heterogeneous grip multi step field polar plate, which is characterized by the following: equipping with the heterogeneous double-grip structure of the source grip and the leakage grip; composing the multi step field polar plate of the first step field polar plate and the second step field polar plate, connecting with the source grip, the leakage grip, the first step field polar plate and the second step field polar plate orderly; equipping with the source and the leakage in the channel trap section and the trap drift section; equipping with grip oxide layer among the source grip, the leakage grip and the channel trap section, equipping with the trap contact hole in the channel trap section; equipping the field oxide layer among the first step field polar plate, the second step field polar plate and the trap draft section; covering the oxide layer on the multi step field polar plate; making the channel trap section and the trap draft section on the underlay. The invention improves the driving current and the transconductance, which reduces the conducting resistance and the power consumption.

Description

technical field [0001] The invention is a metal oxide semiconductor tube, especially a metal oxide semiconductor tube applied in high frequency, high voltage and high power occasions. Background technique [0002] Lateral double-diffused metal-oxide-semiconductor power devices have the advantages of large linear dynamic range, high gain, and good temperature characteristics. More importantly, lateral double-diffused metal-oxide-semiconductor transistors are easy to be compatible with low-voltage standard CMOS processes, meeting the requirements of signal control circuits and The systematic and miniaturized design trend of integrating high-voltage power circuits on a chip improves the reliability of the chip and reduces the cost. Therefore, the bulk silicon lateral double-diffused metal oxide semiconductor transistor has the characteristics of a power amplifier with an operating voltage of 10V-200V. Greater application advantages. However, the...

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Problems solved by technology

[0003] The present invention aims at the problem that the breakdown voltage and on-resistance performance of lateral double-diffused metal oxide semiconductor transistors are contradictory, and provides a lateral double-diffused metal oxide semiconductor transistor with heterogeneous gate and multi-step field plate. The combination of gate and multi-step field plate technology, on the basis of maintaining the breakdown characteristics of lateral double-diffused metal oxide semiconductor transistors, increases the drive current, transconductance, reduces on-resistance, and reduces power consumption, so that the lateral double-diffused Metal oxide semiconductor tubes are well applied in high frequency, high voltage, high power occasions

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