115 results about "Leakage current density" patented technology

Non-volatile resistive-switching memories are described, including a memory element having a first electrode, a second electrode, a metal oxide between the first electrode and the second electrode. The metal oxide switches using bulk-mediated switching, has a bandgap greater than 4 electron volts (eV), has a set voltage for a set operation of at least one volt per one hundred angstroms of a thickness of the metal oxide, and has a leakage current density less than 40 amps per square centimeter (A/cm²) measured at 0.5 volts (V) per twenty angstroms of the thickness of the metal oxide.

A semiconductor radiation detector is provided for improved performance of pixels at the outer region of the crystal tile. The detector includes a semiconductor single crystal substrate with two major planar opposing surfaces separated by a substrate thickness. A cathode electrode covers one of the major surfaces extending around the sides of the substrate a fraction of the substrate thickness and insulated on the side portions by an insulating encapsulant. An exemplary example is given using Cadmium Zinc Telluride semiconductor, gold electrodes, and Humiseal encapsulant, with the side portions of the cathode extending approximately 40-60 percent of the substrate thickness. The example with CZT allows use of monolithic CZT detectors in X-ray and Gamma-ray applications at high bias voltage. The shielding electrode design is demonstrated to significantly improve gamma radiation detection of outer pixels of the array, including energy resolution and photopeak counting efficiency. The detector has performance of detector leakage current density less than 6 nA/mm² at a bias potential of substantially 1400V, and responsive to gamma radiation such that the energy resolution full width half maximum of more than 90% of the pixels is less than 6%.

Ferroelectric PbZrxT1-xO3 (PZT) thin films are deposited on Pt coated Si substrates by using RF magnetron sputtering. A method for obtaining desirable stoichiometric PZT, the desired ferroelectric perovskite phase, and better dielectric properties using a PZT target with Pb/(Zr+Ti) ratio of 1.2 and depositing at 350° C., followed by thermal treatment at 620° C. for 30 min is disclosed. The structural and electrical properties of the PZT layer were further improved by a method of fabricating a novel multi-layer structure which combined the PZT thin film with nanolayers of BaTiO3. The method and device of the present invention provided reduced leakage current density while maintaining high relative effective dielectric constants.

The invention discloses a multiferroic Bi0.96-xSr0.04RExFe0.94Mn0.04Cr0.02O3-NiFe2O4 composite film and a preparation method thereof. The composite film comprises a Bi0.96-xSr0.04RExFe0.94Mn0.04Cr0.02O3 crystalline state film and a NiFe2O4 crystalline state film which are compounded together. The preparation method comprises the following steps: respectively preparing a Bi0.96-xSr0.04RExFe0.94Mn0.04Cr0.02O3 precursor solution and a NiFe2O4 precursor solution; and spinning on a substrate to prepare a multilayer NiFe2O4 film, and spinning on the NiFe2O4 film to prepare a multilayer Bi0.96-xSr0.04RExFe0.94Mn0.04Cr0.02O3 film, thereby obtaining the target product. The equipment requirement is simple, the prepared film is high in uniformity, the doping amount is easy to control, and the ferroelectric properties and ferromagnetic properties of the film are greatly improved. Meanwhile, the leakage current density of the film is effectively reduced.

The invention belongs to the technical field of electronic ceramics, and specifically relates to a bismuth ferrite-strontium bismuth titanatemultiferroic composite film and a preparation method thereof. The bismuth ferrite-strontium bismuth titanatemultiferroic composite film comprises the following raw materials: ferric nitrate, bismuth nitrate, tetrabutyltitanate and strontium acetate. The bismuth ferrite-strontium bismuth titanatemultiferroic composite film has stable structure, and is substantially reduced in leakage current density and strengthened in ferroelectric performance.

It is an object of the invention to provide a process for production of a thin-film capacitor that can simultaneously achieve improved capacity density and reduced leakage current density for barium strontium titanate thin-films. There is provided a process for production of thin-film capacitors that includes a metal oxide thin-film forming step in which an organic dielectric starting material is fired to form a barium strontium titanate thin-film, wherein the firing atmosphere used is an oxygen-containing inert gas atmosphere, and the barium strontium titanate thin-film formed by the process has a larger capacity density than the capacity density of the barium strontium titanate thin-film fired in an oxygen atmosphere.

The invention relates to a titanium oxide oil base nanometer fluid, the disperse phase of which is nanometer titanium oxide that contains a surfactant and can be adulterated with metal ions, and the continuous phase of which is transformer oil or fluid wax, wherein, oleic acid is taken as the surfactant, which can obviously improve the compatibility of the disperse phase nanometer titanium oxide and the continuous phase. Compared with traditional nanometer fluid, the nanometer fluid of the invention has transparent appearance and high anti-sedimentation stability, and does not agglomerate or subside after being placed for a long period of time. As the TiO2 oil base nanometer fluid has very low current density when an electric field is applied and titanium oxide has high dielectric constant, the material can be applied to fulfilling electric control, overcomes the disadvantages of being easy to subside, poor fluidity and high leakage current density of traditional ER fluid and is hopefully applied to microfluid chips.

The invention provides a trench barrier MOS Schottky diode device made of a high-dielectric-constant gate medium material. The trench barrier MOS Schottky diode device comprises an N+ semiconductor substrate, an N- epitaxial layer on the N+ semiconductor substrate, a trench structure formed in the N- epitaxial layer, anode metal and cathode metal, wherein the anode metal is located on the N- epitaxial layer, Schottky contact grows in a trench, the cathode metal is located under the N+ semiconductor substrate, and Ohmic contact grows in the cathode metal. An oxidation layer on the side wall of the trench comprises the upper portion and the lower portion, the upper portion is made of the high-dielectric-constant gate medium material, and the lower portion is made of silicon dioxide. The height of the portion, where the high-dielectric-constant gate medium material grows, of the inner wall of the trench is within three fourths of the total height of the trench. According to the trench barrier MOS Schottky diode device made of the high-dielectric-constant gate medium material, the upper portion of the oxidization layer in the trench is made of the high-dielectric-constant gate medium material, the lower portion is made of the silicon dioxide, compared with a traditional SiO2TMBS device, the leakage current density can be reduced by 19.8%, and the breakdown voltage and forward conductive voltage characteristics of the device are not weakened.

The invention discloses a multiferroic Bi(0.98-x)Sr0.02RExFe0.97Mn0.03O3-CuFe2O4 composite film and a preparation method thereof. The composite film comprises Bi(0.98-x)Sr0.02RExFe0.97Mn0.03O3 crystal films and CuFe2O4 crystal films which are composited together. The preparation method comprises the following steps: firstly, preparing a Bi(0.98-x)Sr0.02RExFe0.97Mn0.03O3 precursor solution and a CuFe2O4 precursor solution respectively; secondly, preparing multiple layers of CuFe2O4 films on a substrate by spin coating, and preparing multiple layers of Bi(0.98-x)Sr0.02RExFe0.97Mn0.03O3 films on the CuFe2O4 films by spin coating to obtain a target product. The equipment requirement is simple, the uniformity of the prepared film is high, the doping amount is easy to control, the ferroelectric and ferromagnetic properties of the film are improved, and the leakage current density of the film is effectively reduced.

The invention provides a preparation method of a low-leakage current Bi0.92Tb0.08Fe(1-x)CrxO3 film. The method comprises the following steps of: dissolving bismuth nitrate, ferric nitrate, terbium nitrate and chromic nitrate at a molar ratio of 0.97:(1-x):0.08:x into the mixed solution of ethylene glycol monomethyl ether and acetic anhydride to form a mixed solution; adding ethanolamine into the mixed solution to adjust the viscosity and the complexing degree to obtain a stable BiFeO3 precursor liquid; and preparing a Tb and Cr co-doped crystalline BiFeO3 film by a spin-coating method and layer-by-layer annealing technology. The film is a crystalline Bi0.92Tb0.08Fe0.99Cr0.01O3 film, wherein the leakage current density is still kept below 10<-4>A/cm<2> in a 150kv/cm test electric field. According to the method provided by the invention, the requirements on equipment are simple, the experimental conditions are easy to realize, the prepared film has good uniformity, and the leakage current of the film is reduced through the co-doping of Tb and Cr.

The invention discloses a low-leakage-current semiconductor film heterojunction and a preparation method thereof. The low-leakage-current semiconductor film heterojunction is prepared by depositing a weak-ferroelectricity film layer with a perovskite structure on a substrate, and then depositing a multiferroic film on the ferroelectric film layer to form an ABO3 type multiferroic film/ABO3 ferroelectric film/substrate heterojunction film structure, wherein proper atmosphere and a proper annealing process are combined. The leakage current density of the film heterojunction is lower than that of a monolayer ABO3 type multiferroic film by about 3-5 orders of magnitudes.

The invention belongs to the technical field of super-large-scale integrated circuits and particularly relates to a super-low k material thin film and a preparation method thereof. The preparation method comprises the following steps of: preparing a sol solution by taking 1,2-bi(triethoxy silicon substrate) ethane (BTEE) as a precursor and adding surfactant P123, HCl, ethanol and deionized water; and then obtaining the super-low k material thin film by adopting a spin coating technology and carrying out post annealing treatment. By virtue of the control on the proportions of the precursor, the surfactant, catalyst and solvent, as well as the control on spin coating film-forming conditions and post treatment conditions, the super-low k material SiCOH thin film, which has the characteristics that the k value is 2.1-2.5, the leakage current density under electric field intensity of 1MV/cm is 1.5*10<-6> to 3.4*10<-9> A/cm<2>, and the Young modulus is 21.05-24.15 Gpa, is obtained.

A piezoelectric element exhibiting a small leakage current density and high reliability as compared with a KNN thin film piezoelectric element in the related art is provided. The piezoelectric element is characterized by including a lower electrode, a piezoelectric layer primarily made from potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO₃, and an upper electrode, wherein the piezoelectric layer is present between the lower electrode and the upper electrode, and the piezoelectric layer has the value determined by dividing the maximum value of intensity of a diffraction peak, where the angle of 2θ is within the range of 21.1°≦2θ≦23.4° in the X-ray diffraction pattern (2θ/θ), by the intensity of a diffraction peak, where 2θ is within the range of 30.1°≦2θ≦33.3°, of 0.04 or less.

The invention discloses a polymer-based material with high density of energy storage and a preparation method thereof, pertaining to the technical field of the preparation of dielectric materials and energy storage materials. The polymer-based material with high density of energy storage comprises carbon nanotube materials and polymer matrix materials which are modified with organics by a chemical method in the proportions of 3 wt percent to 10 wt percent, and has the effects of good compatibility with the matrix, reduction in the leakage current density of the materials and dielectric loss and improvement of the dielectric constant and the breakdown field strength of the materials. The matrix material is polystyrene which is dissolved with ethyl acetate and then blended with modified carbon nanotube solution; the solution is then cast into a mould and the mould is formed by hot pressing and shaped by cold pressing. The polymer-based material with high density of energy storage of the invention is characterized by good insulation, low density, excellent toughness, low cost and easy processing, and can be applied to dielectric materials of electronic devices of information technologies, dielectric projects, electrostatic storage and capacitors.

The invention discloses a preparation method of a Ge-based Metal Oxide Semiconductor (MOS) device with sub-nanometer equivalent to oxide thickness, comprising the steps of 1) cleaning a Ge substrate; 2), performing S passivating; 3), depositing an Al2O3 film on the surface of the Ge substrate in situ;4), depositing an HfO2 film; 5), putting the substrate to a quick annealing furnace to anneal to obtain a finished product. The method obtains a thin aluminum oxide film by in-situ atomic layer deposition, improves interface quality of a gate dielectric film and the Ge substrate, notably improves the electric property of the gate dielectric film and obtains Ge-based MOS device with the Equivalent Oxide Thickness (EOT) of less than 1nm and the leakage current density of less than 2mA/cm2.

The invention discloses a Bi0.92Ho0.08Fe0.97Mn0.03O3-Zn1-xNixFe2O4 multiferroic composite film and a preparation method thereof. The composite film comprises a Bi0.92Ho0.08Fe0.97Mn0.03O3 crystalline film and a Zn1-xNixFe2O4 crystalline film, which are compounded together. The method comprises the following steps: firstly, respectively preparing a Bi0.92Ho0.08Fe0.97Mn0.03O3 polymeric precursor solution and a Zn1-xNixFe2O4 precursor solution during preparation; spinning on a substrate, and preparing a multi-layer Zn1-xNixFe2O4 film; and spinning on the Zn1-xNixFe2O4 film and preparing a multi-layer Bi0.92Ho0.08Fe0.97Mn0.03O3-Zn1-xNixFe2O4 film, so as to obtain a target product. The method disclosed by the invention is simple in demands on equipment; the prepared film is good in uniformity; the doping amount is easy to control; the ferroelectric properties and the ferromagnetic properties of the film are improved; and meanwhile, the leakage current density of the film is effectively reduced.

The invention discloses a Tb, Mn and Ni ternary co-doped low leakage current BiFeO3 film and a preparation method thereof. The preparation method of the Tb, Mn and Ni ternary co-doped low leakage current BiFeO3 film comprises the following steps: dissolving bismuth nitrate, ferric nitrate, terbium nitrate, manganese acetate and nickel acetate in a molar ratio of (0.91-0.97): (0.96-x): (0.08-0.14): 0.04:x in mixed liquor formed by mixing ethylene glycol methyl ether and acetic anhydride, then uniformly stirring to obtain BiFeO3 precursor liquor, wherein x is equal to 0.01-0.02; coating the BiFeO3 precursor liquor on an FTO (Fluorine-doped Tin Oxide)/glass substrate in a rotary manner to prepare a wet film, roasting the wet film to obtain a dry film, then, annealing for 8 minutes-13 minutes at 550 DEG C to obtain a crystalline-state BiFeO3 film; after the crystalline-state BiFeO3 film is cooled, repeating the annealing, so that the crystalline-state BiFeO3 film reaches needed thickness to obtain the Tb, Mn and Ni ternary co-doped low leakage current BiFeO3 film. The preparation method disclosed by the invention is simple in device requirement, suitable for preparing the film on a large surface and the surface with an irregular shape; moreover, chemical components are precise and controllable, electrical performance of the film can be improved, leakage current density of the BiFeO3 under 350 kV/cm test electric fields is kept below 10<-5>A/cm<2>, and dielectric constant under test frequency of 100 kHz is 240-270.

The embodiment of the invention provides a thin film transistor, an array substrate and a display device. On one hand, a grid of the thin film transistor comprises a first subregion, a main region and a second subregion which are integrated, wherein the first subregion and the second subregion are arranged at the two opposite sides of the main region in mirror symmetry, the first subregion and the second subregion are wider than the main region, namely a grid is in a shape that the two ends are wide and the middle part is narrow overall, so that a first sub-conducting channel and a second sub-conducting channel which correspond to the first subregion and the second subregion are longer than a main conducting channel corresponding to the main region; and further on-resistance of a subchannel region is increased. Therefore, the technical scheme provided by the embodiment of the invention can reduce leakage current density of the subchannel region when a TFT is in a closed state, and further overall leakage current density of the TFT in the closed state is reduced.

The invention provides a method for improving specific volume of a low voltage aluminum anode foil, being capable of reducing chloride ion content, reducing leakage current density and improving the specific volume of the aluminum anode foil. The method provided by the invention is mainly characterized in that: chloride ion in the aluminum anode foil is separated out more rapidly by utilizing electrochemical treatment in the initial period of formation and uniform and dense aluminum oxide crystal nucleuses are formed in an aluminum foil; concentration, temperature and exchange traffic of forming liquid as well as size of on load voltage and magnitude of current are adjusted, and corrosion reaction between residual chloride ion in the aluminum foil and the aluminum foil is reduced, thus the residual chloride ion is diffused into the forming liquid; meanwhile, plenty of aluminum oxide crystal nucleuses are formed in the aluminum foil, the crystal nucleuses grow continuously in a subsequent anode oxidation process, and content of crystal alumina in a dielectric layer is improved, thus the specific volume of the aluminum anode foil is improved. Compared with untreated aluminum anode foil, the specific volume of the aluminum foil can be improved by 3-20%, and leakage current density is reduced by 40-60%. The method provided by the invention can be directly applied to the current industrial large-scale production.

The invention discloses a multiferroic Bi0.83Pr0.15Sr0.02Fe0.97-xMn0.03CuxO3-CuFe2O4 composite film and a preparation method thereof. The composite film comprises a Bi0.83Pr0.15Sr0.02Fe0.97-xMn0.03CuxO3 (x=0.01-0.05) crystalline film in the upper layer and a CuFe2O4 crystalline film in the lower layer. The preparation method comprises respectively preparing a Bi0.83Pr0.15Sr0.02Fe0.97-xMn0.03CuxO3 precursor solution and a CuFe2O4 precursor solution, carrying out spin-coating on a substrate with multiple CuFe2O4 films and carrying out spin-coating on the CuFe2O4 film with multiple Bi0.83Pr0.15Sr0.02Fe0.97-xMn0.03CuxO3 films to obtain the multiferroic Bi0.83Pr0.15Sr0.02Fe0.97-xMn0.03CuxO3-CuFe2O4 composite film. The preparation method has simple equipment requirements, can prepare the film with good uniformity, easily controls a doping amount, improves ferroelectric and ferromagnetic properties of the film and effectively reduces film leakage current density.

The invention discloses a method for manufacturing a GaAs-based metal oxide semiconductor (MOS) device, which comprises the following steps of: first washing a substrate, and impregnating the substrate with 8 to 40 volume percent of aqueous solution of (NH4)2S for 10 to 40 minutes for passivation; then depositing a thin Gd2O3 control layer by using metal organic chemical vapor deposition (MOCVD); and finally depositing a high-k gate dielectric layer by using atomic layer deposition (ALD). In the method, the thin Gd2O3 control layer is introduced so as to effectively suppress the formation of As oxides and Ga oxides at an interface, improve interface quality between gate dielectric and the GaAs substrate, effectively adjust energy band compensation between n-GaAs and a gate dielectric thin film and improve the electrical properties of the gate dielectric thin film. The GaAs-based MOS device exhibits relatively higher accumulated capacitance, relatively lower capacitive hysteresis and relatively lower leakage current density. The method is simple and has vast application prospect in the preparation of the GaAs-based metal oxide semiconductor field effect transistor (MOSFET) device.