The invention discloses a Tb, Mn and Ni ternary co-doped
low leakage current BiFeO3 film and a preparation method thereof. The preparation method of the Tb, Mn and Ni ternary co-doped
low leakage current BiFeO3 film comprises the following steps: dissolving
bismuth nitrate,
ferric nitrate,
terbium nitrate,
manganese acetate and
nickel acetate in a
molar ratio of (0.91-0.97): (0.96-x): (0.08-0.14): 0.04:x in mixed liquor formed by mixing
ethylene glycol methyl
ether and
acetic anhydride, then uniformly stirring to obtain BiFeO3 precursor liquor, wherein x is equal to 0.01-0.02;
coating the BiFeO3 precursor liquor on an FTO (
Fluorine-doped
Tin Oxide) / glass substrate in a rotary manner to prepare a wet film,
roasting the wet film to obtain a dry film, then, annealing for 8 minutes-13 minutes at 550 DEG C to obtain a crystalline-state BiFeO3 film; after the crystalline-state BiFeO3 film is cooled, repeating the annealing, so that the crystalline-state BiFeO3 film reaches needed thickness to obtain the Tb, Mn and Ni ternary co-doped
low leakage current BiFeO3 film. The preparation method disclosed by the invention is simple in device requirement, suitable for preparing the film on a large surface and the surface with an
irregular shape; moreover, chemical components are precise and controllable,
electrical performance of the film can be improved,
leakage current density of the BiFeO3 under 350 kV / cm test electric fields is kept below 10<-5>A / cm<2>, and
dielectric constant under test frequency of 100 kHz is 240-270.