18 results about "Leakage current density" patented technology

The invention relates to the technical field of bushing detection, and discloses a bushing insulation state detection method based on multi-parameter real-time monitoring. The method comprises the following steps: acquiring multi-dimensional monitoring data such as a partial discharge pulse sequence, dielectric loss angle tangent value fluctuation data and surface leakage current density distribution in a bushing operation environment in real time; carrying out insulation defect feature extraction on the data set, and generating an insulation defect distribution map containing a creeping discharge track, an internal air gap position mark and a carbonization channel density index; high-risk and potential defect areas are divided by adopting a dynamic threshold segmentation algorithm, boundary coordinates are determined, and an insulation state evaluation vector containing parameters such as a surface discharge intensity index and the like is constructed according to the boundary coordinates; and inputting the vector into a pre-trained insulation aging prediction model, and outputting a bushing residual insulation life estimated value and a defect development priority sequence. According to the method, all-around accurate monitoring and pre-judgment of the insulation state of the sleeve are achieved, and scientific support is provided for operation and maintenance decision making of the sleeve.

The invention discloses a strontium-doped bismuth titanate-based ferroelectric film and a preparation method thereof, and belongs to the technical field of dielectric energy storage materials. The chemical composition of the film is Ba < 1-x > Sr < x > Bi < 4 > Ti < 4 > O < 15 >, wherein x ranges from 0.025 to 0.1. The preparation method comprises the following steps: mixing ethylene glycol monomethyl ether and ethylene glycol, adding bismuth nitrate, barium acetate, strontium acetate and butyl titanate, fully stirring and filtering to obtain a precursor solution, aging, dripping to the center of a substrate for spin coating, heating a spin-coated sample to obtain a dry film, and annealing to obtain the ferroelectric film. The method is low in technological condition requirement, and the thin film obtains the optimal energy storage density by changing the doping proportion of Sr. According to the ferroelectric film, when x is equal to 0.075, the leakage current density of Ba0. 925Sr0. 075Bi4Ti4O15 (BBST75) is only 1.59 * 10 <-7 > A / cm < 2 >, the breakdown field strength is as high as 3.22 MV / cm, and at the moment, the film has the energy storage density of 28.2 J / cm < 3 > and the energy storage efficiency of 80.36%.

A method of fabricating an ultra-thin insulating layer with reduced leakage current density is accomplished by a plurality of atomic layer deposition cycles, and at a predetermined point in time during each cycle of the atomic layer deposition process, an in-situ hydrogen plasma treatment step is introduced. The hydrogen plasma treatment step is alternatively performed after the precursor is adsorbed on the material layer of the material structure and before the reactant is introduced into the reaction chamber, or after the reactant is introduced into the reaction chamber.

The application discloses a ZnO pressure-sensitive ceramic and a simple low-temperature sintering method. The composition of the ZnO pressure-sensitive ceramic is [100-(a+b+c+d+e)] mol% ZnO+amol% Bi2O3+bmol% Co3O4+cmol% Mn2O3+dmol% Cr2O3+emol% SnO2, wherein 2.1<=a+b+c+d+e<=7.5. The ceramic is sintered at a sintering temperature of 800-1000 DEG C, and the voltage gradient E of the ZnO pressure-sensitive ceramic is 1529-2362 V / mm, the nonlinear coefficient a is 63-86, the leakage current density I is 0.2-0.7 mu A / cm b , and the performance is better than that of the commercially available ZnO pressure-sensitive ceramic at the present stage, and the performance requirement of the pressure-sensitive ceramic in actual production can be met. L 2 ​​

The invention discloses a multi-layer orientation induction layer structure, a piezoelectric film and a preparation method of the piezoelectric film, the multi-layer orientation induction layer structure specifically comprises at least one group of laminated units stacked in sequence, and each laminated unit comprises a ZnO orientation induction layer and a ZnO piezoelectric layer deposited on the ZnO orientation induction layer; the electrode layer covers the upper end face of the multi-layer orientation induction layer structure, and the substrate is arranged on the lower end face of the multi-layer orientation induction layer structure and used for bearing the insulating layer. According to the invention, ZnO homogeneous with the piezoelectric layer is used as an orientation induction layer, the step-by-step fine regulation and control of the crystal growth process are realized through multi-layer iterative deposition, the problem of new interface lattice mismatch caused by a heterogeneous interface is effectively avoided, the preferred orientation trend of the ZnO piezoelectric layer along the c-axis (002) direction is strengthened, the scattering of a crystal boundary and crystal defects to carriers is effectively reduced, and the performance of the piezoelectric device is improved. The dielectric loss and the leakage current density are reduced, and the breakdown field strength and the device reliability are improved.

A method and device for optimizing electrical performance of ZnO varistor, the method comprising: measuring the volt-ampere characteristic curve of the ZnO varistor to obtain the untreated breakdown field strength E B(0) and the untreated leakage current density J L(0) ; sequentially performing electro-thermal coupling treatment on the ZnO varistor until the current or power consumption in the ZnO varistor no longer gradually increases, and performing the last electro-thermal coupling treatment on the ZnO varistor for a preset duration; measuring the volt-ampere characteristic curve of the ZnO varistor after the electro-thermal coupling treatment to obtain the treated breakdown field strength E B(n) and the treated leakage current density J L(n) ; if E B(n) is greater than E B(n‑1) , and J L(n) is less than J L(n‑1) , then performing the electro-thermal coupling treatment again for a preset duration according to the condition of the last electro-thermal coupling treatment until E B(n) is no longer greater than E B(n‑1) , and J L(n) is no longer less than J L(n‑1) , thereby obtaining the optimized ZnO varistor. The method and device provided by the embodiment of the present application greatly improve the electrical parameters of the varistor.

The invention discloses a semiconductor core-shell structure filling phase optimized polyethersulfone dielectric for a capacitor and a preparation method thereof, and relates to the technical field of dielectric capacitors. The invention aims to solve the problems that in the prior art, the energy storage density and the charging and discharging efficiency of a medium are low, and the energy storage performance is obviously degraded in a high-temperature environment. The invention discloses a semiconductor core-shell structure filling phase optimized polyethersulfone dielectric for a capacitor. The semiconductor core-shell structure filling phase optimized polyethersulfone dielectric is a semiconductor core-shell structure inorganic filling phase filling modified polymer. The preparation method comprises the following steps: uniformly mixing the semiconductor core-shell structure inorganic filling phase with the polymer through a solution method, and then preparing the composite dielectric film through a blade coating method. According to the application of the semiconductor core-shell structure filling phase optimized polyether sulfone dielectric medium for the capacitor in the capacitor, higher energy storage and polarization performance and smaller leakage current density are achieved, and a new way is opened up for medium-high temperature energy storage dielectric media.

The invention discloses an ordered ferroelectric composite ceramic with high energy storage density and high temperature stability. A composite ceramic matrix is a Bi0. 5Na0. 5TiO3-based lead-free relaxor ferroelectric material, a reinforcing phase is flaky Al2O3, the mass percent of the flaky Al2O3 is xwt% Al2O3, 0 lt, 0 lt, 0 lt, 0 lt, 0 lt, 0 lt, 0 lt, 0 lt, 0 lt, 0 lt, 0 lt, 0 lt, 0 And x < = 7. Flaky Al2O3 is arranged in a ferroelectric matrix in parallel through a tape casting process, and the sequential ferroelectric composite ceramic is prepared by combining a sintering process. When the flaky Al2O3 is parallel to an electrode, an applied electric field can be effectively dispersed in the whole composite ceramic matrix, so that the phenomena of electric field concentration and electric field distortion in the matrix are weakened, the breakdown strength of the composite ceramic is improved, and the energy storage density of the composite ceramic is further improved. Meanwhile, the flaky Al2O3 can effectively hinder the transmission of charges at high temperature, reduces the high-temperature leakage current density, and is beneficial to improving the high-temperature stability of the composite ceramic.

The present application relates to the field of radio frequency integrated circuit and advanced semiconductor packaging technology, especially to a radio frequency integrated capacitor structure based on RDL process and a preparation method thereof, comprising a substrate, a composite dielectric layer, a temperature sensor, a signal processing module and a compensation module. The composite dielectric layer is composed of alternating stacks of silicon nitride and aluminum oxide, the electrode profile is generated with an arc curvature radius and a side wall inclination angle parameter through three-dimensional electromagnetic field simulation, a machine learning model optimizes mask design and etching process parameters based on measured leakage current data, and edge leakage current density is reduced. Each module realizes high-density interconnection through RDL process, is compatible with existing packaging process, and systematically solves the problems of phase synchronization error and high-frequency signal distortion caused by uncontrollable temperature coefficient of capacitance in radio frequency circuit.

This invention discloses a flexible high-energy-storage capacitor film, its preparation method, and its application, belonging to the field of dielectric thin-film capacitor preparation technology. The purpose of this invention is to solve the problem of low energy storage performance in existing capacitor films. The flexible high-energy-storage capacitor film is composed of an antiferroelectric layer material and a relaxation layer material; the antiferroelectric layer material is lead zirconate (PbZrO3, PZO), and the relaxation layer material is lead lanthanum zirconate titanate (Pb). 0.9 La 0.1 Zr 0.52 Ti 0.48 O3, PLZT); This invention studies the heat treatment temperature of antiferroelectric layer and relaxor layer materials, and further designs heterogeneous composite films with different stacking structures; This invention uses the sol-gel method to prepare heterogeneous composite films, introduces relaxor layer materials into antiferroelectric layer materials, reduces the leakage current density of capacitor films, and improves the energy storage performance of capacitor films.

The invention relates to the technical field of ferroelectric materials, in particular to a Ga < 0.6 > Fe < 1.4 > O < 3 > doped ferroelectric material, a Ga < 0.6 > Fe < 1.4 > O < 3 > doped ferroelectric film and a preparation method and application of the Ga < 0.6 > Fe < 1.4 > O < 3 > doped ferroelectric material. According to the Ga0. 6Fe1. 4O3-doped ferroelectric material provided by the invention, the chemical formula of the Ga0. 6Fe1. 4O3-doped ferroelectric material is Ga0. 6Fe1. 4O3-doped ferroelectric material is Ga0. 6Fe1. 4O3-doped ferroelectric material, x is equal to 0.01-0.05, y is equal to 0.05-0.09, Fe < 3 + > is substituted by Co < 2 + >, N < 3-> is substituted by O < 2-> to generate more holes, and the generated holes are combined with electrons to inhibit the formation of Fe < 2 + > and prevent the possibility of electron jump between Fe < 2 + > and Fe < 3 + > ions, so that the leakage current density of the material is remarkably reduced.

The invention discloses a Bi6Ti3Fe2O18 film with reduced anisotropy difference as well as a preparation method and application of the Bi6Ti3Fe2O18 film. The preparation method comprises the following steps: 1, preparing a Bi6Ti3Fe2O18 precursor solution; 2, carrying out pre-annealing treatment on the substrate; 3, spin-coating the Bi6Ti3Fe2O18 precursor solution on the surface of a substrate at a low speed, an intermediate speed and a high speed in sequence, and then drying the precursor solution on the surface of the substrate to obtain a dry film A; 4, performing air plasma treatment on the dry film A, annealing the dry film A to obtain a dry film B, and performing air plasma treatment on the dry film B again; and 5, repeating the steps 3-4 for n times, and sequentially prolonging the annealing time from the first annealing to the nth annealing to prepare the Bi6Ti3Fe2O18 film. The invention provides the method for improving the comprehensive performance of the Bi6Ti3Fe2O18 film on the premise of not changing the components of the parent material, the treated sample shows excellent crystallinity on the crystal structure, the leakage current density shows reduction in order of magnitude, and the polarization intensity is also remarkably enhanced.

The application discloses a high-flux antiferroelectric-dielectric energy storage solid solution film, which comprises a substrate, a bottom electrode layer and an antiferroelectric-dielectric layer which are sequentially grown on the substrate; the substrate is a rigid base SrTiO3; the bottom electrode layer is a SrRuO3 film; the antiferroelectric-dielectric layer is a solid solution film which is alternately grown by a PbZrO3 antiferroelectric layer and a SrTiO3 dielectric layer; the composition of the PbZrO3 antiferroelectric layer decreases in a ladder form along a horizontal direction, and the composition of the SrTiO3 dielectric layer increases in a ladder form along the horizontal direction. The application optimizes the antiferroelectric characteristics of the high-flux film by changing the growth parameters such as the laser emission number ratio of PbZrO3 and SrTiO3 and the cycle period, so that a lower leakage current density and better performance are realized, and the application is expected to be applied to the application fields of energy storage films and capacitors.

The application relates to the technical field of ferroelectric materials, in particular to a doped Ga 0.6 Fe 1.4 O3 ferroelectric material, a doped Ga 0.6 Fe 1.4 O3 ferroelectric film, a preparation method and application thereof. The application provides a doped Ga 0.6 Fe 1.4 O3 ferroelectric material, the doped Ga 0.6 Fe 1.4 O3 ferroelectric material has a chemical formula of Ga 0.6 Fe 1.4‑x Co x O 3‑y N y , wherein x=0.01-0.05, y=0.05-0.09, Co 2+ substitutes Fe 3+ , N 3‑ substitutes O 2‑ , more holes will be generated after the substitution, the generated holes will be combined with electrons to inhibit the formation of Fe 2+ , and the possibility of electron hopping between Fe 2+ and Fe 3+ ions is prevented, so that the leakage current density of the material is significantly reduced.

The application discloses a high-polarization-intensity and low-leakage-current-density antiferroelectric composite film and a preparation method and application thereof, and belongs to the technical field of inorganic thin film capacitor and memory preparation. The application aims to solve the problems of low polarization intensity and large leakage current density of existing inorganic capacitor and memory thin film. The high-polarization-intensity and low-leakage-current-density antiferroelectric composite film is composed of a functional layer and a lead zirconate layer; the functional layer is one or more of dioxidetantalum, zinc oxide or zirconium oxide. The application obtains an inorganic thin film with optimal performance by studying the material and the number of layers of the functional layer; the application prepares inorganic antiferroelectric composite films with three different functional layer materials by adopting a sol-gel method combined with a spin coating and annealing process, introduces the functional layer into the lead zirconate antiferroelectric thin film, reduces the leakage current density of the inorganic thin film, suppresses the polarization loss of the composite film, improves the polarization intensity of the composite film, and is favorable to improving the service life of a device.

This application provides a method and system for optimizing the dielectric properties of hafnium-zirconium oxide (HZO) capacitors based on an artificial intelligence (AI) model. The method includes: fabricating a capacitor with a deposited HZO dielectric layer; acquiring the electrical properties of the capacitor and constructing a dataset of process parameters and corresponding electrical properties, where leakage current density and dielectric constant are used to characterize the electrical properties; training an AI prediction model based on the dataset to obtain a trained AI prediction model; optimizing the process parameters of the capacitor using a Bayesian optimization method based on the trained AI prediction model; and determining the optimal combination of process parameters for fabricating the capacitor based on the Bayesian optimization results. This application can quickly determine the optimal combination of process parameters for obtaining a HZO capacitor with high dielectric constant and controlled leakage current while reducing the number of experimental iterations, thereby reducing semiconductor process development costs and improving R&D efficiency.

The invention discloses a gallium oxide microdefect electrical property adjusting method, and relates to the technical field of semiconductor material preparation, and the method comprises the steps: synchronously collecting an original image data set of gallium oxide, and obtaining a quantum correction coefficient; the method comprises the following steps: collecting technological parameters for manufacturing gallium oxide, constructing a reinforcement learning state vector in combination with a quantum correction coefficient, and generating a technological control instruction and a state-action pair through a pre-trained TD3 algorithm network; adjusting process parameters according to the process control instruction, and manufacturing gallium oxide by using the adjusted process parameters; the resistivity of the gallium oxide surface is measured in a pulse mode, carrier concentration and mobility are calculated in combination with Hall effect test, breakdown voltage and leakage current density are measured at the same time, the mobility change rate and the leakage current fluctuation coefficient are calculated, and a reward value is calculated according to a reward function. According to the invention, the electrical performance consistency and stability of gallium oxide under extreme working conditions are improved.

The invention relates to the technical field of radio frequency integrated circuits and advanced semiconductor packaging, in particular to a radio frequency integrated capacitor structure based on an RDL process and a preparation method, and the radio frequency integrated capacitor structure comprises a substrate, a composite dielectric layer, a temperature sensor, a signal processing module and a compensation module. The composite dielectric layer is formed by alternately stacking silicon nitride and aluminum oxide, the electrode contour generates arc curvature radius and side wall inclination angle parameters through three-dimensional electromagnetic field simulation, and a machine learning model optimizes mask design and etching process parameters based on leakage current measured data, so that the edge leakage current density is reduced. High-density interconnection of all the modules is achieved through the RDL technology, an existing packaging process is compatible, and the problems of phase synchronization errors and high-frequency signal distortion caused by uncontrollable capacitance temperature coefficients in a radio frequency circuit are systematically solved.