Method for manufacturing GaAs-based metal oxide semiconductor (MOS) device

Abstract

The invention discloses a method for manufacturing a GaAs-based metal oxide semiconductor (MOS) device, which comprises the following steps of: first washing a substrate, and impregnating the substrate with 8 to 40 volume percent of aqueous solution of (NH4)2S for 10 to 40 minutes for passivation; then depositing a thin Gd2O3 control layer by using metal organic chemical vapor deposition (MOCVD); and finally depositing a high-k gate dielectric layer by using atomic layer deposition (ALD). In the method, the thin Gd2O3 control layer is introduced so as to effectively suppress the formation of As oxides and Ga oxides at an interface, improve interface quality between gate dielectric and the GaAs substrate, effectively adjust energy band compensation between n-GaAs and a gate dielectric thin film and improve the electrical properties of the gate dielectric thin film. The GaAs-based MOS device exhibits relatively higher accumulated capacitance, relatively lower capacitive hysteresis and relatively lower leakage current density. The method is simple and has vast application prospect in the preparation of the GaAs-based metal oxide semiconductor field effect transistor (MOSFET) device.

Description

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AI Technical Summary

Benefits of technology

This patented technology allows for better control over how well an epilayered semiconductor device works when exposed to oxygen during manufacturing processes. Using specific techniques like chemical vapor deposition or atomic layer growth methods, we have discovered that adding certain elements into gallium nitride layers improves their electronic structure compared with pure germanium dioxides without these added materials. Additionally, controlling the composition ratio helps reduce impurities such as arsenic which may be introduced during production process. Overall, our technical effect is increased efficiency and reliability in producing advanced IIIA/V compound transistors used in modern electronics applications.

Problems solved by technology

This patented technical problem addressed by this patents relates to improving the performance of certain types of electronic components like Fin Field Effect Transistor (FinFet). These improvements require better understanding of how these structures work together during their operation due to factors including reduced energy usage caused by smaller sizes and improved manufacturing processes associated therewith. Current methods involve depositing layers called gate insulation films onto crystal surfaces or directly adding interlayer passivating agents into source gases containing gallium nitride.

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