123results about How to "Reduce leakage current density" patented technology

The invention provides a multiferroic Bi1-xRExFe0.97-yMn0.03TMyO3 / CoFe2O4 composite film and a preparation method thereof. The composite film comprises a Bi1-xRExFe0.97-yMn0.03TMyO3 crystalline state film and a CoFe2O4 crystalline state film. The preparation method comprises the following steps of respectively preparing Bi1-xRExFe0.97-yMn0.03TMyO3 precursor solution and CoFe2O4 precursor solution; spin coating on a substrate to prepare a plurality of layers of CoFe2O4 films, spin coating on the CoFe2O4 films to prepare a plurality of layers of Bi1-xRExFe0.97-yMn0.03TMyO3 films and accordingly obtaining a target product. According to the multiferroic Bi1-xRExFe0.97-yMn0.03TMyO3 / CoFe2O4 composite film and the preparation method thereof, the device requirement is simple, the prepared film is good in homogeneity, the doping content is easy to control, the ferroelectric property and the ferromagnetic property of the film are improved to a large extent, and the film is high in residual polarization value and residual polarization value.

Disclosed is a manufacture method of ZnO ceramics film low voltage dependent resistor, comprising bismuth ion Bi 3+,antimony ion Sb3+, manganese ion Mn2+, chrome ion Cr3+ and cobalt ion Co3+ distributing in ZnO sol , and their mol ratio is: Zn2+ Bi3+ Sb3+ Mn2+ Cr3+ Co3+ =100: (0.6~1.4) : (1.6~3.0) : (0.2~1.0) : (0.5~3.0) : (1.0~3.0). The temperature of sol of 60~80% is raised to 550deg.C~650deg.C after baking to decompose organic matter, then ZnO crystal formed is milled to be ZnO nanometer powder whose diameter is 30nm~70nm, add dispersion agent into the ZnO powder and then they are added into the remain sol after mixing, at last ZnO ceramics film low voltage voltage dependent resistor is made on monocrystalline sillicon substrate. The production made by the invention has excellent electric performance, voltage dependent voltage lower than 4V, nonlinear coefficient of 22 and density of leakage current smaller than 0.4uA / nm2.

The invention relates to varistor ceramics, and specifically relates to a method for improving the electrical property of a zinc-oxide-based low voltage varister ceramic film. The method is characterized in that: an aluminum foil, which is used as an absorption layer, is attached to the surface of a zinc-oxide-based low voltage varister ceramic film sample; a confinement medium is painted, stuck or covered on the aluminum foil; the ceramic film sample is then embedded on a mold; and laser impact is applied to the ceramic film sample, such that the electrical property of the zinc-oxide-based low voltage varister ceramic film is improved. According to the present invention, a laser impact treatment technology is employed in the surface treatment upon the zinc-oxide-based low voltage varister ceramic film. With the liquid confinement medium, non-linear coefficient of the zinc-oxide-based ceramic film is raised by 24% or above comparing to that before the laser impact treatment, varister voltage of the zinc-oxide-based ceramic film is reduced by 30% or above comparing to that before the laser impact treatment, and leakage current density of the zinc-oxide-based ceramic film is reducedby 35% or above comparing to that before the laser impact treatment. The advantage of the method is that: non-linear coefficient of the film is improved while the leakage current density of the film is reduced.

The invention discloses a method for preparing electrorheological liquid of silicon dioxide- water polyurethane nanometer compound. The nuclear mateiral of said compound is anion polyurethane with side chain carrying with acid group, the nuclear material is silicon dioxide; the electrorheological liquid takes silicon- dioxide- water polyurethane nanometer compound as dispersing phase, takes dimethicone as dispersing liquid, and the method for preparing comprises following steps: taking ethyl orthosilicate and anion polyurethane with side chain carrying with alkali group as raw material, proceeding hydrolysis, polymerization for ethyl orthosilicate and polyurethane nanometer microcapsule, and then alkali neutralizing, distilling out solvent and getting final product; cooling, drying, grinding and getting powder, mixing it with dimethicone according to ratio by weight of 30- 40: 70. The invention is characterized by simple process, distinctive performance of prepared electrorheological liquid, small drain current density and it is ideal electrorheological material.

The invention relates to a TiO2 giant electrorheological fluid and application thereof. The preparation method of the TiO2 giant electrorheological fluid comprises the steps of: S1: mixing deionized water and anhydrous ethanol in a volume ratio of 3:100, and performing stirring to obtain a solution A, mixing butyl titanate and anhydrous ethanol in a volume ratio of 10:100, and performing stirring to obtain a solution B; S2: adding the solution B into the solution A under stirring, carrying out full reaction, and then conducitng centrifugation, washing and drying to obtain TiO2 particles, wherein the deionized water and butyl titanate are in a volume ratio of 1:5; S3: subjecting the TiO2 particles obtained by S2 to heat treatment at 120-200DEG C for 2h; and S4: mixing the TiO2 particles obtained in S3 with silicone oil to obtain TiO2 giant electrorheological fluid, which has a TiO2 particle solid content of not less than 1.0g / mL. The TiO2 giant electrorheological fluid provided by the invention has the advantages of simple preparation process, high electrorheological efficiency and small leakage current density, and can be used in a wide temperature range. Under optimal conditions, the electrorheological efficiency is up to 2000 times and the leakage current density is less than 20microA / cm<2>, therefore the TiO2 giant electrorheological fluid is suitable for industrial application.

The present invention aims to compensate the oxygen vacancy of a piezoelectric thin film forming a piezoelectric thin film element, further improve the piezoelectric characteristic and further reduce the leakage current density. The piezoelectric thin film element provided by the invention is characterized by having a pair of electrode layers and a piezoelectric thin film sandwiched between the pair of electrode layers, wherein the pair of electrode layers are composed of platinum (Pt), oxide particles are contained in at least one of the electrode layers, and the oxide particles are oxide particles of at least one element constituting the piezoelectric thin film or oxide particles of Pt.

The invention provides a BLSFMC / CMFO film with a resistance switch effect and a preparation method thereof. The BLSFMC / CMFO film comprises an upper layer film and a bottom layer film which are composited together; a chemical formula of the bottom layer film is Co1-xMnxFe2O4, the bottom layer film is a distorted cubic inverse spinel structure, and a space group is Fd3m; and a chemical formula of the upper layer film is Bi0.79La0.19Sr0.03Fe0.94Mn0.04Co0.0203, the upper layer film is a distorted rhombohedral perovskite structure, and a space group is R3c, wherein x is equal to 0 to 0.8. The BLSFMC / CMFO film is prepared by adopting a sol-gel method and a layer-by-layer annealing process. By virtue of the doping for the BiFeO3 film, the ferroelectric performance is improved; and the BiFeO3 filmis composited with a CoFe2O4 magnetic layer, so that the resistance switch effect of the ferroelectric polarization-regulated ferroelectric / ferromagnetic composite film can be realized.

The invention relates to a method for preparing a ferroelectric / piezoelectric thick film in inorganic materials, and discloses a method for preparing a potassium-sodiumniobate (K0.5Na0.5NbO3, KNN) lead-free piezoelectric thick film on the basis of a modified chemical solution coating process. The method comprises the following steps of: (1) preparing niobium ethoxide from anhydrous niobium chloride and absolute ethyl alcohol at low cost; (2) preparing precursor solution of potassium-sodiumniobate from anhydrous sodium acetate, anhydrous potassium acetate and the niobium ethoxide by PVP modification and ion doping technique; and (3) performing repeated coating-thermal treatment to obtain the piezoelectric thick film which is compact, has no cracks and has the thickness between 0.8 and 5 mu m.

An insulting material forming composition for electronic elements, which contains, as a polymerizable component, a monomer that has two or more (meth)acrylic moieties and a polycyclic alicyclic structure.

The invention discloses electrorheological fluid and a preparation method thereof. The electrorheological fluid comprises a dispersion phase and a dispersion medium, wherein the dispersion phase comprises a metal-organic framework-titanium oxide complex; the dispersion medium comprises insulating liquid; and the dispersion phase is uniformly dispersed in the dispersion medium. The preparation method comprises the following steps: providing a first mixed system containing a metal-organic framework material, a surfactant and a solvent; providing a second mixed system comprising organic titanate;mixing the second mixed system with the first mixed system, and reacting to obtain the metal-organic framework-titanium oxide complex; and uniformly dispersing the metal-organic framework-titanium oxide complex into the insulating liquid, thereby obtaining the electrorheological fluid. The electrorheological fluid disclosed by the invention is high in dynamic shear stress, excellent in stability,low in leakage current density and excellent in subsidence resistance, and the preparation method is simple, feasible and low in cost.