3results about How to "Reduce leakage current density" patented technology

The invention discloses a polyimide dielectric film containing carboxyl betaine and a preparation method thereof. The carboxyl betaine-containing polyimide dielectric film is prepared from carboxyl betaine-containing polyimide, and the carboxyl betaine-containing polyimide is prepared by the following steps: firstly, taking a precursor of carboxyl betaine, m-phenylenediamine and bisphenol a type diether dianhydride as monomers, and carrying out condensation polymerization to obtain polyamide acid; carrying out complete imidization on the polyamide acid under the action of a catalyst isoquinoline to obtain polyimide containing a precursor; and reacting the polyimide containing the precursor with sodium bromoacetate to obtain polyimide containing carboxyl betaine. The zwitterions are introduced into the polyimide structure to improve the dielectric and energy storage performance of the polyimide dielectric film, and meanwhile, the preparation method has the advantages of being low in cost, simple in process, controllable and adjustable in performance, suitable for large-scale application and the like.

This invention discloses a ternary amorphous insulating dielectric film, its preparation method, and its applications. The ternary amorphous insulating dielectric film is composed of a material with the chemical formula Al(X)N, ​​where X is selected from any one or a combination of two or more of B, Si, Zr, and Zn. The ternary amorphous insulating dielectric film has a disordered amorphous structure. This invention uses pulsed laser deposition technology to prepare the ternary amorphous insulating dielectric film. The preparation method is simple and controllable. The prepared ternary amorphous insulating dielectric film exhibits high thermodynamic stability, high dielectric constant, and low leakage current density. It can serve as an insulating material resistant to repeated impacts from strong electric fields and high currents, and is heat-resistant, showing great promise for applications in the semiconductor field.

This invention discloses a flexible high-energy-storage capacitor film, its preparation method, and its application, belonging to the field of dielectric thin-film capacitor preparation technology. The purpose of this invention is to solve the problem of low energy storage performance in existing capacitor films. The flexible high-energy-storage capacitor film is composed of an antiferroelectric layer material and a relaxation layer material; the antiferroelectric layer material is lead zirconate (PbZrO3, PZO), and the relaxation layer material is lead lanthanum zirconate titanate (Pb). 0.9 La 0.1 Zr 0.52 Ti 0.48 O3, PLZT); This invention studies the heat treatment temperature of antiferroelectric layer and relaxor layer materials, and further designs heterogeneous composite films with different stacking structures; This invention uses the sol-gel method to prepare heterogeneous composite films, introduces relaxor layer materials into antiferroelectric layer materials, reduces the leakage current density of capacitor films, and improves the energy storage performance of capacitor films.