123results about How to "Reduce leakage current density" patented technology

The present invention discloses a zinc oxide piezoresistor material comprising the following raw materials: ZnO, Bi2O3, Sb2O3, Co2O3, Cr2O3, MnCO3, NiO, Al2O3 and oxides of boron, wherein, calculating according to B2O3, the weight ratio of the oxide of boron to ZnO is 2.1-20:100; the percentages by mole of ZnO, Bi2O3, Sb2O3, Co2O3, Cr2O3, MnCO3, NiO and Al2O3 are respectively 90.5%-96.5%, 0.3%-5%, 0.1%-3%, 0.1-2%, 0.1%-1%, 0.2%-2%, 0.1%-1% and 0.005%-0.05%; and voltage-dependent combination performance of the material is good. The present invention further discloses a preparing method of the material; the method has the advantages of simple technology and low cost, and the method is suitable for industrialized production.

The invention provides a Bi0.92-xHo0.08AExFe0.97Mn0.03O3-Zn1-yNiyFe2O4 ferromagnetic composite film and a preparation method thereof. The ferromagnetic composite film comprises a Bi0.92-xHo0.08AExFe0.97Mn0.03O3 crystalline film and a Zn1-yNiyFe2O4 crystalline film, which are compounded together. The preparation method is as below: first respectively preparing a Zn1-yNiyFe2O4 precursor solution and a Bi0.92-xHo0.08AExFe0.97Mn0.03O3 precursor solution, wherein AE is Sr, Ca, Ba or Pb, x equals to 0.01-0.04, and y equals to 0.1-0.9; preparing a plurality of Zn1-yNiyFe2O4 films on a substrate by spin coating; and then preparing plurality of Bi0.92-xHo0.08AExFe0.97Mn0.03O3 films on the Zn1-yNiyFe2O4 films by spin coating, so as to obtain the ferromagnetic composite film. The method regulates the crystal structure of BiFeO3 by doping, and uses ferromagnetic Zn1-yNiyFe2O4 as the magnetic layer, so as to substantially increase the ferroelectric and ferromagnetic properties of the film, and effectively reduce the leakage current density of the film.

The invention discloses a multiferroic Bi0.96-xSr0.04RExFe0.94Mn0.04Cr0.02O3-NiFe2O4 composite film and a preparation method thereof. The composite film comprises a Bi0.96-xSr0.04RExFe0.94Mn0.04Cr0.02O3 crystalline state film and a NiFe2O4 crystalline state film which are compounded together. The preparation method comprises the following steps: respectively preparing a Bi0.96-xSr0.04RExFe0.94Mn0.04Cr0.02O3 precursor solution and a NiFe2O4 precursor solution; and spinning on a substrate to prepare a multilayer NiFe2O4 film, and spinning on the NiFe2O4 film to prepare a multilayer Bi0.96-xSr0.04RExFe0.94Mn0.04Cr0.02O3 film, thereby obtaining the target product. The equipment requirement is simple, the prepared film is high in uniformity, the doping amount is easy to control, and the ferroelectric properties and ferromagnetic properties of the film are greatly improved. Meanwhile, the leakage current density of the film is effectively reduced.

The invention belongs to the technical field of electronic ceramics, and specifically relates to a bismuth ferrite-strontium bismuth titanatemultiferroic composite film and a preparation method thereof. The bismuth ferrite-strontium bismuth titanatemultiferroic composite film comprises the following raw materials: ferric nitrate, bismuth nitrate, tetrabutyltitanate and strontium acetate. The bismuth ferrite-strontium bismuth titanatemultiferroic composite film has stable structure, and is substantially reduced in leakage current density and strengthened in ferroelectric performance.

The invention provides a multiferroic Bi1-xRExFe0.97-yMn0.03TMyO3 / CoFe2O4 composite film and a preparation method thereof. The composite film comprises a Bi1-xRExFe0.97-yMn0.03TMyO3 crystalline state film and a CoFe2O4 crystalline state film. The preparation method comprises the following steps of respectively preparing Bi1-xRExFe0.97-yMn0.03TMyO3 precursor solution and CoFe2O4 precursor solution; spin coating on a substrate to prepare a plurality of layers of CoFe2O4 films, spin coating on the CoFe2O4 films to prepare a plurality of layers of Bi1-xRExFe0.97-yMn0.03TMyO3 films and accordingly obtaining a target product. According to the multiferroic Bi1-xRExFe0.97-yMn0.03TMyO3 / CoFe2O4 composite film and the preparation method thereof, the device requirement is simple, the prepared film is good in homogeneity, the doping content is easy to control, the ferroelectric property and the ferromagnetic property of the film are improved to a large extent, and the film is high in residual polarization value and residual polarization value.

The invention provides a Bi0.90Er0.10Fe0.96Co0.02Mn0.02O3 / Mn(1-x)CoxFe2O4 composite film and a preparation method thereof. The composite film comprises a Bi0.90Er0.10Fe0.96Co0.02Mn0.02O3 crystalline-state film and a Mn(1-x)CoxFe2O4 crystalline-state film which are compounded together. The preparation method comprises the following steps: respectively preparing a Bi0.90Er0.10Fe0.96Co0.02Mn0.02O3 precursor solution and a Mn(1-x)CoxFe2O4 precursor solution; then spinning on a substrate to prepare a multi-layer Mn(1-x)CoxFe2O4 film; and spinning on the Mn(1-x)CoxFe2O4 film to prepare a multi-layer Bi0.90Er0.10Fe0.96Co0.02Mn0.02O3 film which is the target product. In the invention, the equipment requirements are simple, the prepared film has relatively good uniformity, the doping amount is easy to control, the ferroelectric property and ferromagnetic property of the film are remarkably improved, and the leak current density of the film is effectively reduced at the same time.

The invention discloses a multiferroic Bi(0.98-x)Sr0.02RExFe0.97Mn0.03O3-CuFe2O4 composite film and a preparation method thereof. The composite film comprises Bi(0.98-x)Sr0.02RExFe0.97Mn0.03O3 crystal films and CuFe2O4 crystal films which are composited together. The preparation method comprises the following steps: firstly, preparing a Bi(0.98-x)Sr0.02RExFe0.97Mn0.03O3 precursor solution and a CuFe2O4 precursor solution respectively; secondly, preparing multiple layers of CuFe2O4 films on a substrate by spin coating, and preparing multiple layers of Bi(0.98-x)Sr0.02RExFe0.97Mn0.03O3 films on the CuFe2O4 films by spin coating to obtain a target product. The equipment requirement is simple, the uniformity of the prepared film is high, the doping amount is easy to control, the ferroelectric and ferromagnetic properties of the film are improved, and the leakage current density of the film is effectively reduced.

The invention discloses a ZnO-Bi2O3-B2O3 series voltage-sensitive material sintered at lower temperature, which is prepared from the following raw materials, such as ZnO, Bi2O3, TiO2, Co2O3, Cr2O3, MnCO3, NiO, Al2O3 and oxides of boron. In B2O3 terms, the additive amount of the oxides of boron is 2.2-20 parts by weight as comparison with 100 parts by weight of ZnO. The material contains no Sb2O3,has lower sintering temperature and favorable voltage-sensitive comprehensive properties. The invention also discloses a preparation method of the material, which is simple in process and easy to operate.

Disclosed is a manufacture method of ZnO ceramics film low voltage dependent resistor, comprising bismuth ion Bi 3+,antimony ion Sb3+, manganese ion Mn2+, chrome ion Cr3+ and cobalt ion Co3+ distributing in ZnO sol , and their mol ratio is: Zn2+ Bi3+ Sb3+ Mn2+ Cr3+ Co3+ =100: (0.6~1.4) : (1.6~3.0) : (0.2~1.0) : (0.5~3.0) : (1.0~3.0). The temperature of sol of 60~80% is raised to 550deg.C~650deg.C after baking to decompose organic matter, then ZnO crystal formed is milled to be ZnO nanometer powder whose diameter is 30nm~70nm, add dispersion agent into the ZnO powder and then they are added into the remain sol after mixing, at last ZnO ceramics film low voltage voltage dependent resistor is made on monocrystalline sillicon substrate. The production made by the invention has excellent electric performance, voltage dependent voltage lower than 4V, nonlinear coefficient of 22 and density of leakage current smaller than 0.4uA / nm2.

The invention discloses a Bi0.92Ho0.08Fe0.97Mn0.03O3-Zn1-xNixFe2O4 multiferroic composite film and a preparation method thereof. The composite film comprises a Bi0.92Ho0.08Fe0.97Mn0.03O3 crystalline film and a Zn1-xNixFe2O4 crystalline film, which are compounded together. The method comprises the following steps: firstly, respectively preparing a Bi0.92Ho0.08Fe0.97Mn0.03O3 polymeric precursor solution and a Zn1-xNixFe2O4 precursor solution during preparation; spinning on a substrate, and preparing a multi-layer Zn1-xNixFe2O4 film; and spinning on the Zn1-xNixFe2O4 film and preparing a multi-layer Bi0.92Ho0.08Fe0.97Mn0.03O3-Zn1-xNixFe2O4 film, so as to obtain a target product. The method disclosed by the invention is simple in demands on equipment; the prepared film is good in uniformity; the doping amount is easy to control; the ferroelectric properties and the ferromagnetic properties of the film are improved; and meanwhile, the leakage current density of the film is effectively reduced.

The invention relates to varistor ceramics, and specifically relates to a method for improving the electrical property of a zinc-oxide-based low voltage varister ceramic film. The method is characterized in that: an aluminum foil, which is used as an absorption layer, is attached to the surface of a zinc-oxide-based low voltage varister ceramic film sample; a confinement medium is painted, stuck or covered on the aluminum foil; the ceramic film sample is then embedded on a mold; and laser impact is applied to the ceramic film sample, such that the electrical property of the zinc-oxide-based low voltage varister ceramic film is improved. According to the present invention, a laser impact treatment technology is employed in the surface treatment upon the zinc-oxide-based low voltage varister ceramic film. With the liquid confinement medium, non-linear coefficient of the zinc-oxide-based ceramic film is raised by 24% or above comparing to that before the laser impact treatment, varister voltage of the zinc-oxide-based ceramic film is reduced by 30% or above comparing to that before the laser impact treatment, and leakage current density of the zinc-oxide-based ceramic film is reducedby 35% or above comparing to that before the laser impact treatment. The advantage of the method is that: non-linear coefficient of the film is improved while the leakage current density of the film is reduced.

The invention relates to a bar-shaped perovskite deposited compound giant electrorheological fluid and preparation method thereof, including a continuous phase using a liquid insulating medium and a disperse phase dispersed therein. The invention is characterized in that the disperse phase is nanometer bar-shaped perovskite deposited compound particles, and the mass concentration of the disperse phase is 10% to 75%. The preparation method is as follows: the bar-shaped perovskite deposited compound particles are firstly synthesized by coprecipitation method, and then mixed with the liquid insulating medium with low specific inductive capacity uniformly so that the perovskite compound giant electrorheological fluid is prepared. Compared with the existing technology, the perovskite compound giant electrorheological fluid provided by the invention has simple preparation method, easy operation, low material cost and short preparation period, and the obtained giant electrorheological fluid has the advantages of low initial viscosity, great stress yield, low leakage current density, and the like.

The invention relates to preparation of a polar-molecule type electro-rheological fluid, in particular to polar carbonyl (C=O) containing dielectric particles prepared by an oxalate co-precipitation method. The size of the particles is between 5 and 5000 nm. The carbonyl containing dielectric particles are taken as a disperse phase, and insulating hydrophobic liquid of which the electrical conductivity is lower than 10 S / m and the dielectric constant is lower than 10 is taken as a dispersion medium. The electro-rheological fluid prepared by the method has the advantages of high shear / yield stress (static yield stress is about 100 kPa), small leakage current, good settling resistance and the like.

The invention discloses a method for preparing electrorheological liquid of silicon dioxide- water polyurethane nanometer compound. The nuclear mateiral of said compound is anion polyurethane with side chain carrying with acid group, the nuclear material is silicon dioxide; the electrorheological liquid takes silicon- dioxide- water polyurethane nanometer compound as dispersing phase, takes dimethicone as dispersing liquid, and the method for preparing comprises following steps: taking ethyl orthosilicate and anion polyurethane with side chain carrying with alkali group as raw material, proceeding hydrolysis, polymerization for ethyl orthosilicate and polyurethane nanometer microcapsule, and then alkali neutralizing, distilling out solvent and getting final product; cooling, drying, grinding and getting powder, mixing it with dimethicone according to ratio by weight of 30- 40: 70. The invention is characterized by simple process, distinctive performance of prepared electrorheological liquid, small drain current density and it is ideal electrorheological material.

The embodiment of the invention provides a thin film transistor, an array substrate and a display device. On one hand, a grid of the thin film transistor comprises a first subregion, a main region and a second subregion which are integrated, wherein the first subregion and the second subregion are arranged at the two opposite sides of the main region in mirror symmetry, the first subregion and the second subregion are wider than the main region, namely a grid is in a shape that the two ends are wide and the middle part is narrow overall, so that a first sub-conducting channel and a second sub-conducting channel which correspond to the first subregion and the second subregion are longer than a main conducting channel corresponding to the main region; and further on-resistance of a subchannel region is increased. Therefore, the technical scheme provided by the embodiment of the invention can reduce leakage current density of the subchannel region when a TFT is in a closed state, and further overall leakage current density of the TFT in the closed state is reduced.

The invention discloses a multiferroic Bi0.83Pr0.15Sr0.02Fe0.97-xMn0.03CuxO3-CuFe2O4 composite film and a preparation method thereof. The composite film comprises a Bi0.83Pr0.15Sr0.02Fe0.97-xMn0.03CuxO3 (x=0.01-0.05) crystalline film in the upper layer and a CuFe2O4 crystalline film in the lower layer. The preparation method comprises respectively preparing a Bi0.83Pr0.15Sr0.02Fe0.97-xMn0.03CuxO3 precursor solution and a CuFe2O4 precursor solution, carrying out spin-coating on a substrate with multiple CuFe2O4 films and carrying out spin-coating on the CuFe2O4 film with multiple Bi0.83Pr0.15Sr0.02Fe0.97-xMn0.03CuxO3 films to obtain the multiferroic Bi0.83Pr0.15Sr0.02Fe0.97-xMn0.03CuxO3-CuFe2O4 composite film. The preparation method has simple equipment requirements, can prepare the film with good uniformity, easily controls a doping amount, improves ferroelectric and ferromagnetic properties of the film and effectively reduces film leakage current density.

The invention discloses a preparation method of an amorphous lanthanum oxide film, for solving the technical problem that the amorphous lanthanum oxide film prepared by the existing method has high leakage current density and low breakdown voltage. According to the technical scheme, La2O3 is used as the coating material for evaporation, p-type Si(100) is used as a substrate; after the substrate is washed, a heating system is used to heat and evaporate the substrate in a vacuum chamber, wherein the temperature is kept at 100-300 DEG C, the evaporation rate is controlled to 1.5-3nm / min, the ion-assisted beam is 20-30mA, the vacuum degree of the vacuum chamber is less than 3*10<-3>Pa, Ar2 of which the purity is 99.99% is used as a working gas in the evaporation process, and the vacuum degree is kept at 3.8*10<-2>Pa in the evaporation process; and rapid heat treatments at 600-900 DEG C for 1min, 5min, 10min and 15min are performed on the deposited amorphous La2O3 film respectively to obtain the amorphous lanthanum oxide film. By optimizing the formula and technology of the amorphous lanthanum oxide film, the amorphous lanthanum oxide film with low leakage current density and high dielectric constant is obtained. The leakage current density of the prepared amorphous lanthanum oxide film is reduced from 10<-6>A / cm<2> in the background technology to 6.5*10<-7>A / cm<2>.

The invention relates to a TiO2 giant electrorheological fluid and application thereof. The preparation method of the TiO2 giant electrorheological fluid comprises the steps of: S1: mixing deionized water and anhydrous ethanol in a volume ratio of 3:100, and performing stirring to obtain a solution A, mixing butyl titanate and anhydrous ethanol in a volume ratio of 10:100, and performing stirring to obtain a solution B; S2: adding the solution B into the solution A under stirring, carrying out full reaction, and then conducitng centrifugation, washing and drying to obtain TiO2 particles, wherein the deionized water and butyl titanate are in a volume ratio of 1:5; S3: subjecting the TiO2 particles obtained by S2 to heat treatment at 120-200DEG C for 2h; and S4: mixing the TiO2 particles obtained in S3 with silicone oil to obtain TiO2 giant electrorheological fluid, which has a TiO2 particle solid content of not less than 1.0g / mL. The TiO2 giant electrorheological fluid provided by the invention has the advantages of simple preparation process, high electrorheological efficiency and small leakage current density, and can be used in a wide temperature range. Under optimal conditions, the electrorheological efficiency is up to 2000 times and the leakage current density is less than 20microA / cm<2>, therefore the TiO2 giant electrorheological fluid is suitable for industrial application.

The invention discloses a method for preparing (111) oriented bismuth ferrite films by use of sol gel and chemical solution methods. The method comprises the steps of S1, preparing a precursor solution, S2, preparing a bismuth ferrite precursor colloid, S3, preparing bismuth ferrite precursor films, and S4, preparing the (111) oriented bismuth ferrite films. The preferred oriented bismuth ferrite films prepared by use of the method have great room-temperature electric polarization intensity and relatively low room-temperature leakage current density, and are void-free, compact and even in structure, and even in thickness; the method is simple in preparation process, accurately controllable in raw material stoichiometric ratio, few in devices, low in cost, and capable of realizing industrial production and satisfying commercial application.

The invention discloses a high-k gate dielectric material and a preparation method thereof, belonging to the technical field of semiconductors, in particular to the application field of metallic oxide semiconductor field effect transistors (MOSFET). The high-k gate dielectric material is a composite material of Er2O3-Al2O3 (ErAlO); an ErAlO amorphous grate dielectric composite oxide film is prepared on a P-type Si (100) substrate by an RF magnetron sputtering preparation method by a sputtering target which is a mixed ceramic target of Er2O3 and Al2O3; according to tests, the ErAlO film has favorable thermostability and planeness as well as low leakage current density and can replace SiO2 to become a novel high-k gate dielectric material.

The present invention aims to compensate the oxygen vacancy of a piezoelectric thin film forming a piezoelectric thin film element, further improve the piezoelectric characteristic and further reduce the leakage current density. The piezoelectric thin film element provided by the invention is characterized by having a pair of electrode layers and a piezoelectric thin film sandwiched between the pair of electrode layers, wherein the pair of electrode layers are composed of platinum (Pt), oxide particles are contained in at least one of the electrode layers, and the oxide particles are oxide particles of at least one element constituting the piezoelectric thin film or oxide particles of Pt.

The invention provides a Bi[0.85-x]Pr0.15AExFe0.97Mn0.03O3 ferroelectric film and a preparation method thereof. The method comprises the following steps: preparing a Bi[0.85-x]Pr0.15AExFe0.97Mn0.03O3 precursor solution from bismuth nitrate, praseodymium nitrate, hydrogen nitrate AE, ferric nitrate and manganous nitrate, wherein AE is Sr, Ca or Ba, and x=0.02-0.05; spinning the precursor solution on a substrate; and then spinning, drying and annealing, so as to obtain the Bi[0.85-x]Pr0.15AExFe0.97Mn0.03O3 ferroelectric film. The Bi[0.85-x]Pr0.15AExFe0.97Mn0.03O3 ferroelectric film is simple in demands on equipment; the experiment condition is easy to achieve; the doping amount is easy to control; the ferroelectric property of the film can be greatly improved; and the prepared Bi[0.85-x]Pr0.15AExFe0.97Mn0.03O3 ferroelectric film is good in uniformity, low in leakage current, and low in coercive field, and has relatively high remanent polarization.

The invention provides a Bi[0.92-x]Ho0.08AExFe0.97Mn0.03O3 multiferroic film and a preparation method thereof. The method comprises the following steps: preparing a Bi[0.92-x]Ho0.08AExFe0.97Mn0.03O3 precursor solution from bismuth nitrate, holmium nitrate, nitric acid AE, ferric nitrate and manganese acetate, wherein AE is Ca, Ba or Sr, and x=0.01-0.08; spinning the precursor solution on a substrate; and then spinning, drying and annealing, so as to obtain the Bi[0.92-x]Ho0.08AExFe0.97Mn0.03O3 multiferroic film. The Bi[0.92-x]Ho0.08AExFe0.97Mn0.03O3 multiferroic film is simple in demands on equipment; the experiment condition is easy to achieve; the doping amount is easy to control; the ferroelectric property of the film can be greatly improved; and the prepared Bi[0.92-x]Ho0.08AExFe0.97Mn0.03O3 multiferroic film is good in uniformity, low in leakage current and low in coercive field, and has relatively high remanent polarization.

The invention discloses a flexible film capacitor with high energy storage density. The flexible film capacitor comprises a flexible polymer substrate and at least one film capacitor energy storage film layer vertically stacked on the substrate, wherein each film capacitor energy storage film layer comprises a lower transparent electrode layer, a lower modification layer, a high-dielectric-constant energy storage film layer, an upper modification layer and an upper transparent electrode layer which are vertically stacked on the flexible polymer substrate in sequence from bottom to top; the upper transparent electrode layer and the lower transparent electrode layer are interdigital electrodes; the transparent electrode layer is made of graphene, ITO or AZO; the energy storage film layer ismade of Al2O3, HfO2, TiO2, ZrO2 or BZN; and the upper modification layer and the lower modification layer are made of graphene-like materials such as WS2, MoS2 and WSe2 or ZnO and GaN. The capacitor is simple in structure and preparation process and easy to produce in batches; raw material cost is low; the tungsten disulfide film is compact and large in specific surface area, the contact interfacequality of the electrode layer and the dielectric layer is greatly improved, and the storage energy is increased.

The invention provides a BLSFMC / CMFO film with a resistance switch effect and a preparation method thereof. The BLSFMC / CMFO film comprises an upper layer film and a bottom layer film which are composited together; a chemical formula of the bottom layer film is Co1-xMnxFe2O4, the bottom layer film is a distorted cubic inverse spinel structure, and a space group is Fd3m; and a chemical formula of the upper layer film is Bi0.79La0.19Sr0.03Fe0.94Mn0.04Co0.0203, the upper layer film is a distorted rhombohedral perovskite structure, and a space group is R3c, wherein x is equal to 0 to 0.8. The BLSFMC / CMFO film is prepared by adopting a sol-gel method and a layer-by-layer annealing process. By virtue of the doping for the BiFeO3 film, the ferroelectric performance is improved; and the BiFeO3 filmis composited with a CoFe2O4 magnetic layer, so that the resistance switch effect of the ferroelectric polarization-regulated ferroelectric / ferromagnetic composite film can be realized.

The invention relates to a method for preparing a ferroelectric / piezoelectric thick film in inorganic materials, and discloses a method for preparing a potassium-sodiumniobate (K0.5Na0.5NbO3, KNN) lead-free piezoelectric thick film on the basis of a modified chemical solution coating process. The method comprises the following steps of: (1) preparing niobium ethoxide from anhydrous niobium chloride and absolute ethyl alcohol at low cost; (2) preparing precursor solution of potassium-sodiumniobate from anhydrous sodium acetate, anhydrous potassium acetate and the niobium ethoxide by PVP modification and ion doping technique; and (3) performing repeated coating-thermal treatment to obtain the piezoelectric thick film which is compact, has no cracks and has the thickness between 0.8 and 5 mu m.

An insulting material forming composition for electronic elements, which contains, as a polymerizable component, a monomer that has two or more (meth)acrylic moieties and a polycyclic alicyclic structure.

The invention discloses electrorheological fluid and a preparation method thereof. The electrorheological fluid comprises a dispersion phase and a dispersion medium, wherein the dispersion phase comprises a metal-organic framework-titanium oxide complex; the dispersion medium comprises insulating liquid; and the dispersion phase is uniformly dispersed in the dispersion medium. The preparation method comprises the following steps: providing a first mixed system containing a metal-organic framework material, a surfactant and a solvent; providing a second mixed system comprising organic titanate;mixing the second mixed system with the first mixed system, and reacting to obtain the metal-organic framework-titanium oxide complex; and uniformly dispersing the metal-organic framework-titanium oxide complex into the insulating liquid, thereby obtaining the electrorheological fluid. The electrorheological fluid disclosed by the invention is high in dynamic shear stress, excellent in stability,low in leakage current density and excellent in subsidence resistance, and the preparation method is simple, feasible and low in cost.

The invention provides a HoSrMnNi co-doped trigonal bismuth ferrite superlattice film and a preparation method thereof. A Bi<0.89>Ho<0.08>Sr<0.03>Fe<0.94>Mn<0.03>Ni<0.03>O<3> / Bi<0.89>Ho<0.08>Sr<0.03>Fe<0.93>Mn<0.03>Ni<0.04>O<3> superlattice film, i.e., the HoSrMnNi co-doped trigonal bismuth ferrite superlattice film, is prepared from a bismuth ferrite film doped by different elements, wherein the crystal structure of the bismuth ferrite film is a trigonal structure and belongs to both the space group R3c: H and the space group R3c: R. According to the invention, a sol-gel process is employed, and spin-coating and layer-upon-layer annealing methods are utilized; requirements on equipment are simple; and the preparation method is suitable for preparation of films on large surfaces and surfaces with irregular shapes, allows chemical components to be accurate and controllable, and can improve the multiferroic performance of the BiFeO<3> film.

The invention discloses an HZO / AO / HZO nano laminated film and a preparation method and application thereof. The film is composed of an HZO top layer, an AO middle layer and an HZO bottom layer, wherein the HZO top layer is formed by alternately laminating HfO2 film layers and ZrO2 film layers, the AO middle layer is an Al2O3 film layer, and the HZO bottom layer is formed by alternately laminating HfO2 film layers and ZrO2 film layers. According to the technical scheme, the HfO2 layers and the ZrO2 layers are alternately deposited, an interface is introduced through a nano laminated structure to regulate and control interface energy to stabilize a phase, growth of an electric tree is effectively hindered, and breakdown is avoided. In addition, the interface can reduce the electron injection depth and inhibit local phase decomposition, so that the fatigue performance is finally improved. On the other hand, the dielectric layer Al2O3 is introduced to promote the formation of a 180-degree domain so as to reduce a built-in electric field, weaken the fixed orientation degree of the electric domain and reduce the leakage current density. According to the invention, the technical problem of preparation of the HZO / AO / HZO nano laminated film with good ferroelectric performance can be solved, and the high-quality ferroelectric film can be produced in a simple and controllable mode.