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HoSrMnNi co-doped trigonal bismuth ferrite superlattice film and preparation method thereof

A superlattice and bismuth ferrite technology is applied in the field of HoSrMnNi co-doped bismuth ferrite superlattice thin film and its preparation, and achieves the effects of simple equipment requirements, easy reaction and low process temperature

Active Publication Date: 2017-08-22
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Currently, there is no information about Bi 0.89 Ho 0.08 Sr 0.03 Fe 0.94 mn 0.03 Ni 0.03 o 3 / Bi 0.89 Ho 0.08 Sr 0.03 Fe 0.93 mn 0.03 Ni 0.04 o 3 Related reports on superlattice thin films and their preparation methods

Method used

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  • HoSrMnNi co-doped trigonal bismuth ferrite superlattice film and preparation method thereof
  • HoSrMnNi co-doped trigonal bismuth ferrite superlattice film and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Step 1: Using bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and nickel acetate as raw materials (5% excess bismuth nitrate), the molar ratio is 0.94:0.08:0.03:0.94:0.03:0.03 dissolved in volume ratio In the mixed solution of ethylene glycol methyl ether and acetic anhydride of 3:1, obtain the stable precursor solution A that the total concentration of metal ions is 0.3mol / L;

[0033] Using bismuth nitrate, holmium nitrate, strontium nitrate, iron nitrate, manganese acetate and nickel acetate as raw materials (5% excess bismuth nitrate), the molar ratio is 0.94:0.08:0.03:0.93:0.03:0.04 and the volume ratio is 3: 1 in the mixed solution of ethylene glycol methyl ether and acetic anhydride, obtain the stable precursor solution B that the total concentration of metal ions is 0.3mol / L;

[0034] Step 2: Clean the FTO / glass substrate, and then irradiate it under ultraviolet light until the surface of the FTO / glass substrate reaches atom...

Embodiment 2

[0041] Step 1: Using bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and nickel acetate as raw materials (5% excess bismuth nitrate), the molar ratio is 0.94:0.08:0.03:0.94:0.03:0.03 dissolved in volume ratio In the mixed solution of ethylene glycol methyl ether and acetic anhydride of 1:1, obtain the stable precursor solution A that the total concentration of metal ions is 0.1mol / L;

[0042] Using bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and nickel acetate as raw materials (5% excess bismuth nitrate), the molar ratio is 0.94:0.08:0.03:0.93:0.03:0.04 and the volume ratio is 1: 1 in the mixed solution of ethylene glycol methyl ether and acetic anhydride, obtain the stable precursor solution B that the total concentration of metal ions is 0.1mol / L;

[0043] Step 2: Clean the FTO / glass substrate, and then irradiate it under ultraviolet light until the surface of the FTO / glass substrate reaches at...

Embodiment 3

[0047] Step 1: Using bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and nickel acetate as raw materials (5% excess bismuth nitrate), the molar ratio is 0.94:0.08:0.03:0.94:0.03:0.03 dissolved in volume ratio In the mixed solution of ethylene glycol methyl ether and acetic anhydride of 2:1, obtain the stable precursor solution A that the total concentration of metal ions is 0.2mol / L;

[0048] Using bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and nickel acetate as raw materials (5% excess bismuth nitrate), the molar ratio is 0.94:0.08:0.03:0.93:0.03:0.04 and the volume ratio is 2: 1 in the mixed solution of ethylene glycol methyl ether and acetic anhydride, obtain the stable precursor solution B that the total concentration of metal ions is 0.2mol / L;

[0049] Step 2: Clean the FTO / glass substrate, and then irradiate it under ultraviolet light until the surface of the FTO / glass substrate reaches at...

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Abstract

The invention provides a HoSrMnNi co-doped trigonal bismuth ferrite superlattice film and a preparation method thereof. A Bi<0.89>Ho<0.08>Sr<0.03>Fe<0.94>Mn<0.03>Ni<0.03>O<3> / Bi<0.89>Ho<0.08>Sr<0.03>Fe<0.93>Mn<0.03>Ni<0.04>O<3> superlattice film, i.e., the HoSrMnNi co-doped trigonal bismuth ferrite superlattice film, is prepared from a bismuth ferrite film doped by different elements, wherein the crystal structure of the bismuth ferrite film is a trigonal structure and belongs to both the space group R3c: H and the space group R3c: R. According to the invention, a sol-gel process is employed, and spin-coating and layer-upon-layer annealing methods are utilized; requirements on equipment are simple; and the preparation method is suitable for preparation of films on large surfaces and surfaces with irregular shapes, allows chemical components to be accurate and controllable, and can improve the multiferroic performance of the BiFeO<3> film.

Description

technical field [0001] The invention belongs to the field of functional materials, and relates to the preparation of a HoSrMnNi co-doped bismuth trigonal ferrite superlattice film on the surface of a functionalized FTO / glass substrate, specifically Bi 0.89 Ho 0.08 Sr 0.03 Fe 0.94 mn 0.03 Ni 0.03 o 3 / Bi 0.89 Ho 0.08 Sr 0.03 Fe 0.93 mn 0.03 Ni 0.04 o 3 superlattice film. Background technique [0002] BiFeO 3 It is one of the few single-phase multiferroic materials with a twisted perovskite structure (belonging to the R3c point group), and a skewed hexagonal structure that deviates from the ideal perovskite structure formed by stretching the cubic structure along the (111) direction , has both ferroelectric order and antiferromagnetic order at room temperature, due to the higher ferroelectric phase transition temperature (Tc=1103K) and magnetic phase transition temperature (T N =643K), it has wide application prospects in magnetoelectric sensors, spintronic devi...

Claims

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Application Information

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IPC IPC(8): C03C17/34C04B35/40C04B35/622
Inventor 谈国强郭美佑杨玮刘云任慧君夏傲
Owner SHAANXI UNIV OF SCI & TECH
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