Preparation method of amorphous lanthanum oxide film

A technology of lanthanum oxide and thin film, which is applied in the field of preparation of amorphous lanthanum oxide thin film, can solve the problems of low breakdown voltage and high leakage current density of amorphous lanthanum oxide thin film, and achieve high breakdown voltage and low leakage current density Effect

Inactive Publication Date: 2013-01-09
NORTHWESTERN POLYTECHNICAL UNIV
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the defects of large leakage current density and low breakdown voltage of the amorphous lanthanum oxide film prepared by the existing method, the present invention provides a preparation method of the amorphous lanthanum oxide film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of amorphous lanthanum oxide film
  • Preparation method of amorphous lanthanum oxide film
  • Preparation method of amorphous lanthanum oxide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Embodiment 1, weighing La 2 o 3 (purity is 99.99%), a silicon wafer with a diameter of 75mm and a p-type (100) crystal orientation is used as a substrate. The Si substrate was thoroughly cleaned before evaporation. The background vacuum degree before evaporation is less than 3×10 -3 Pa, 99.99% pure Ar is used in the evaporation process 2 As a working gas, the vacuum degree is kept at 3.8×10 -2 Pa or so. The heating system heats the substrate and maintains its temperature at 100°C. Since the amorphous La to be prepared 2 o 3 The thickness of the film is small, and the film material is fully pre-melted with an electron gun before evaporation. During this process, the baffle must be closed to prevent the evaporated film material molecules from being deposited on the substrate during the preheating process, thereby affecting the deposition process. Thickness control. In addition, in order to control the film thickness more accurately, the film thickness is controll...

Embodiment 2

[0020] Embodiment 2, weighing La 2 o 3 (purity is 99.99%), a silicon wafer with a diameter of 75mm and a p-type (100) crystal orientation is used as the substrate. The Si substrate was thoroughly cleaned before evaporation. The background vacuum degree before evaporation is less than 3×10 -3 Pa, 99.99% pure Ar is used in the evaporation process 2 As a working gas, the vacuum degree is kept at 3.8×10 -2 Pa or so. The heating system heats the substrate and maintains its temperature at 200°C. Since the amorphous La to be prepared 2 o 3 The thickness of the film is small, and the film material is fully pre-melted with an electron gun before evaporation. During this process, the baffle must be closed to prevent the evaporated film material molecules from being deposited on the substrate during the preheating process, thereby affecting the deposition process. Thickness control. In addition, in order to control the film thickness more accurately, the film thickness is contro...

Embodiment 3

[0022] Embodiment 3, weighing La 2 o 3 (purity is 99.99%), a silicon wafer with a diameter of 75mm and a p-type (100) crystal orientation is used as a substrate. The Si substrate was thoroughly cleaned before evaporation. The background vacuum degree before evaporation is less than 3×10 -3 Pa, 99.99% pure Ar is used in the evaporation process 2 As a working gas, the vacuum degree is kept at 3.8×10 -2 Pa or so. The heating system heats the substrate and maintains its temperature at 250°C. Since the amorphous La to be prepared 2 o 3 The thickness of the film is small, and the film material is fully pre-melted with an electron gun before evaporation. During this process, the baffle must be closed to prevent the evaporated film material molecules from being deposited on the substrate during the preheating process, thereby affecting the deposition process. Thickness control. In addition, in order to control the film thickness more accurately, the film thickness is controll...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
electrical resistivityaaaaaaaaaa
current densityaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of an amorphous lanthanum oxide film, for solving the technical problem that the amorphous lanthanum oxide film prepared by the existing method has high leakage current density and low breakdown voltage. According to the technical scheme, La2O3 is used as the coating material for evaporation, p-type Si(100) is used as a substrate; after the substrate is washed, a heating system is used to heat and evaporate the substrate in a vacuum chamber, wherein the temperature is kept at 100-300 DEG C, the evaporation rate is controlled to 1.5-3nm/min, the ion-assisted beam is 20-30mA, the vacuum degree of the vacuum chamber is less than 3*10<-3>Pa, Ar2 of which the purity is 99.99% is used as a working gas in the evaporation process, and the vacuum degree is kept at 3.8*10<-2>Pa in the evaporation process; and rapid heat treatments at 600-900 DEG C for 1min, 5min, 10min and 15min are performed on the deposited amorphous La2O3 film respectively to obtain the amorphous lanthanum oxide film. By optimizing the formula and technology of the amorphous lanthanum oxide film, the amorphous lanthanum oxide film with low leakage current density and high dielectric constant is obtained. The leakage current density of the prepared amorphous lanthanum oxide film is reduced from 10<-6>A/cm<2> in the background technology to 6.5*10<-7>A/cm<2>.

Description

technical field [0001] The invention belongs to the field of functional ceramics, and relates to a preparation method of a lanthanum oxide film, in particular to a preparation method of an amorphous lanthanum oxide film. Background technique [0002] With the wide application of integrated components in microelectronics technology, there is an urgent need for a functional material with moderate dielectric constant at room temperature, low leakage current, high breakdown voltage and small equivalent gate oxide thickness. , amorphous lanthanum oxide thin films are considered to be a promising candidate material. At present, the high-k gate insulating dielectric materials that have been researched more at home and abroad are mainly metal oxides, such as TiO 2 , ZrO 2 , HfO 2 , Ta 2 o 5 , Al 2 o 3 , and the rare earth oxide Gd 2 o 3 , Y 2 o 3 , La 2 o 3 etc., however, these materials tend to become polycrystalline oxides when annealed at high temperatures, resulting...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/24C23C14/58C23C14/54
Inventor 樊慧庆杨陈李强
Owner NORTHWESTERN POLYTECHNICAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap