HZO/AO/HZO nano laminated film and preparation method and application thereof

Abstract

The invention discloses an HZO/AO/HZO nano laminated film and a preparation method and application thereof. The film is composed of an HZO top layer, an AO middle layer and an HZO bottom layer, wherein the HZO top layer is formed by alternately laminating HfO2 film layers and ZrO2 film layers, the AO middle layer is an Al2O3 film layer, and the HZO bottom layer is formed by alternately laminating HfO2 film layers and ZrO2 film layers. According to the technical scheme, the HfO2 layers and the ZrO2 layers are alternately deposited, an interface is introduced through a nano laminated structure to regulate and control interface energy to stabilize a phase, growth of an electric tree is effectively hindered, and breakdown is avoided. In addition, the interface can reduce the electron injection depth and inhibit local phase decomposition, so that the fatigue performance is finally improved. On the other hand, the dielectric layer Al2O3 is introduced to promote the formation of a 180-degree domain so as to reduce a built-in electric field, weaken the fixed orientation degree of the electric domain and reduce the leakage current density. According to the invention, the technical problem of preparation of the HZO/AO/HZO nano laminated film with good ferroelectric performance can be solved, and the high-quality ferroelectric film can be produced in a simple and controllable mode.

Description

technical field [0001] The invention belongs to the technical preparation field of ferroelectric thin films, and in particular relates to a HZO / AO / HZO nano-laminated thin film and its preparation method and application. Background technique [0002] In recent years, people's demand for high-performance personal electronic devices has driven the pace of next-generation low-power high-density storage technologies. The hysteresis after electric field-induced polarization exhibited by ferroelectric materials heralds the application of such materials in next-generation memories. The development of ferroelectric random access memory (FeRAM) has been focused on perovskite materials, which have small band gaps and low potential barriers. Therefore, thick films usually need to be prepared to avoid the occurrence in perovskite-based FeRAM. Large leakage current, which is the main barrier to implementing these materials at advanced technology nodes (below 22nm). A large number of rep...

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Problems solved by technology

[0004] About HfO 2 The research mainly focuses on the improvement of remanent polarization intensity, mainly through epitaxial growth, adjusting electrode materials, etc. to achieve the increase of ferroelectric phase content, and in order to pursue high remanent polarization intensity, generally choose the optimal thickness of about 10nm. It is inevitable that it is easy to break down due to excessive leakage current, which will lead to device failure

In addition, the built-in electric field is often generated inside the ferroelectric film due to spontaneous polarization, and the movement of domain walls is restricted to a certain extent, which leads to the reduction of remanent polarization and the reduction of storage window.

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