Insulating material forming composition for electronic elements, insulating material for electronic elements, electronic element, and thin film transistor

Abstract

An insulting material forming composition for electronic elements, which contains, as a polymerizable component, a monomer that has two or more (meth)acrylic moieties and a polycyclic alicyclic structure.

Description

technical field [0001] The present invention relates to a composition for forming an insulating material for electronic components and an electronic component using the composition. Background technique [0002] Insulation materials used for interlayer insulation are essential materials in electronic components with switching functions such as thin film transistors (TFTs), organic EL elements, and liquid crystal cells. [0003] Thin film transistors, which are typical electronic elements, are widely used as switching elements of display devices such as liquid crystal display devices and organic EL display devices. [0004] Conventionally, this TFT has been produced using amorphous silicon or polycrystalline silicon, but there are CVD (Chemical Vapor Deposition, chemical vapor deposition) devices used in the production of TFTs using silicon are very expensive, and large-scale display devices such as TFTs are used. This will be accompanied by problems such as a substantial in...

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Problems solved by technology

[0008] However, there is room for improvement of conventionally known polymer insulators

First, the types of polymer insulators that can be coated and formed are limited

In addition, even polymer insulators that can be coated and formed into films usually cannot withstand the subsequent coating process, such as the formation of the semiconductor layer of bottom gate (bottom gate) TFT, the formation of conductive layers such as electrodes, and the formation of TFT after TFT formation. The conditions used for the formation of the protective layer, etc. (for example, the type of solvent applied), and the element cannot be formed

[0009] Second, polymer insulators are often low heat-resistant substances, especially acrylic polymer insulating films represented by polymethyl methacrylate (PMMA), which generally cannot withstand such as the formation of organic EL display devices, Process temperature used in the formation of organic EL elements after TFT formation, etc. Process temperature of subsequent processes after TFT formation

[0010] Third, the leakage current density of existing polymer insulators is relatively high (usually higher than 1×10 at 2MV / cm -7 A / cm 2 ), so good TFT characteristics cannot be obtained

However, due to the lack of cross-linking functionality, when other layers are further formed by a solution process after film formation, dissolution, etc., may occur in the subsequent film formation process, and may not be able to withstand the formation of devices

[0014] As a method for solving these problems, cross-linked polymer insulators such as Patent Document 2, Patent Document 3, and Non-Patent Document 4 have been reported, but the monomer structure of the present invention has not yet been disclosed

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