Flexible film capacitor with high energy storage density and preparation method

Abstract

The invention discloses a flexible film capacitor with high energy storage density. The flexible film capacitor comprises a flexible polymer substrate and at least one film capacitor energy storage film layer vertically stacked on the substrate, wherein each film capacitor energy storage film layer comprises a lower transparent electrode layer, a lower modification layer, a high-dielectric-constant energy storage film layer, an upper modification layer and an upper transparent electrode layer which are vertically stacked on the flexible polymer substrate in sequence from bottom to top; the upper transparent electrode layer and the lower transparent electrode layer are interdigital electrodes; the transparent electrode layer is made of graphene, ITO or AZO; the energy storage film layer ismade of Al2O3, HfO2, TiO2, ZrO2 or BZN; and the upper modification layer and the lower modification layer are made of graphene-like materials such as WS2, MoS2 and WSe2 or ZnO and GaN. The capacitor is simple in structure and preparation process and easy to produce in batches; raw material cost is low; the tungsten disulfide film is compact and large in specific surface area, the contact interfacequality of the electrode layer and the dielectric layer is greatly improved, and the storage energy is increased.

Description

technical field [0001] The invention belongs to the technical field of arc ion plating, relates to a flexible film capacitor with high energy storage density, and also relates to a preparation method of the flexible film capacitor with high energy storage density. Background technique [0002] With the advancement of science and technology, the traditional flat-panel capacitors have been unable to meet people's needs for portable, wearable, and foldable electronic devices due to their defects such as hardness and weight. Flexible flat-panel capacitors are flexible, light in weight, High performance and other advantages, therefore, has a broad prospect of technology development and practical application. In order to increase the energy storage density of the capacitor, three methods can be adopted: 1) increasing the breakdown resistance field strength E of the capacitor; 2) reducing the thickness d of the energy storage film layer; 3) increasing the dielectric constant ε of t...

AI Technical Summary

Problems solved by technology

The problem with this film capacitor is that (1) the energy storage film layer consists of two upper and lower breakdown-resistant sub-layers with low dielectric constants connected in series to an intermediate energy storage film layer, then the dielectric constant (ε) is reduced, that is, the energy storage capacity of the capacitor The dielectric constant of the thin film layer is reduced and the interface quality between the layers is poor, which reduces the energy storage density of the capacitor

(2) The film capacitor needs to be sintered at a high temperature of 600-800 ° C. The high temperature increases the defects of the energy storage film layer, increases the leakage current of the capacitor, and reduces the energy storage density of the capacitor; in addition, the high sintering temperature limits the Application field of capacitor

[0007] The Chinese patent document with the publication number CN102543430A and the publication date of 2012.07.04 discloses a pyrochlore thin film multilayer ceramic capacitor and its low-temperature preparation method. Dielectric film, forming a thin film multilayer ceramic capacitor; the problem of this film capacitor is (1) using dielectric films such as bismuth zinc niobium or bismuth magnesium niobium as the energy storage film layer, although the energy storage film layer has a higher dielectric constant , but the film with high dielectric constant has defects such as high oxygen vacancies, high traps and high surface roughness, so it also makes the interface quality between the electrode and the energy storage film layer poor, and increases the leakage of the energy storage film layer. current, so that the reservoir density of the capacitor decreases

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