The invention relates to the field of
tungsten disulfide, and particularly relates to a method of preparing large-area high-quality completely single-layered
tungsten disulfide. A
chemical vapor deposition technique is adopted. Gold the
tungsten solubility of which is extremely low is adopted as a growth substrate, and a tungsten source and a
sulfur source under
atmospheric pressure at high temperature are subjected to a catalytic reaction on the surface of the gold substrate to grow, in a self-limiting manner, completely single-layered
tungsten disulfide large-size monocrystalline and large-area continuous film. The characteristic that bonding between the prepared
tungsten disulfide and the gold substrate under
atmospheric pressure is weak is utilized, a bubbling transferring process and a process combining bubbling and reel-to-reel transferring are respectively adopted to transfer the large-area completely single-layered
tungsten disulfide to rigid and flexible substrates under the premise of not destroying the gold substrate. The completely single-layered high-quality
millimeter-level tungsten disulfide monocrystalline and large-area continuous film can be prepared through the method, thus laying foundations for application of single-layered tungsten disulfide in the fields of
electron / optoelectronic devices,
spinning devices, solar cells, gas / light sensors, flexible film electronic / optoelectronic devices, and the like.